Reverse Voltage 90 to 100V
Forward Current 2.0A
Maximum Ratings and Thermal Characteristics
(T
A
= 25C unless otherwise noted)
Parameter
Symbol
SS2H9
SS2H10
Unit
Device marking code
MS9
MS10
Maximum repetitive peak reverse voltage
V
RRM
90
100
V
Working peak reverse voltage
V
RWM
90
100
V
Maximum DC blocking voltage
V
DC
90
100
V
Maximum average forward rectified current at: T
L
= 130C
I
F(AV)
2.0
A
Peak forward surge current 8.3ms single half sine-wave
I
FSM
75
A
superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current at t
p
= 2.0
s, 1KH
Z
I
RRM
1.0
A
Critical rate of rise of reverse voltage
dv/dt
10,000
V/
s
Maximum thermal resistance junction to lead T
L
= 25C
R
JL
25
C/W
Operating junction and storage temperature range
T
J
, T
STG
65 to +175
C
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Maximum instantaneous
I
F
= 2.0A, T
J
= 25C
V
F
0.79
V
forward voltage at
(Note 1):
I
F
= 2.0A, T
J
= 125C
0.65
Maximum DC reverse current
T
J
= 25C
I
R
10
A
at rated DC blocking voltage
(Note 1)
T
J
= 125C
4
mA
Note: (1) Pulse test: 300
s pulse width, 1% duty cycle
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile surface mount package
Built-in strain relief
Low power loss, high efficiency
For use in low voltage high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
250C/10 seconds at terminals
Mechanical Data
Case: JEDEC DO-214AA molded plastic body
Terminals: Solder plated, solderable per MIL-STD750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003oz., 0.093g
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AA
(SMB)
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
New Product
High Voltage Surface Mount
Schottky Barrier Rectifiers
SS2H9 and SS2H10
Vishay Semiconductors
formerly General Semiconductor
Document Number 88750
www.vishay.com
25-Jun-02
1
0
3.0
4.0
0
20
40
60
80
100
120
140
A
verage Forward Current (A)
Lead Temperature (
C)
2.0
1.0
Fig. 1 Forward Current
Derating Curve
160
0.2
0
0.4
0.8
1.0
Fig. 2 Typical Instantaneous
Forward Characteristics
20
60
40
100
80
Fig. 3 Typical Reverse
Characteristics
Instantaneous Reverse Current (
A)
Percent of Rated Peak Reverse Voltage (%)
0.01
0.1
10
1
Instantaneous Forward Current (A)
T
J
= 25
C
Reverse Voltage (V)
Junction Capacitance (pF)
0.1
1
10
100
100
1000
10
0.1
0.01
1
10000
100
T
J
= 100
C
Fig. 4 Typical Junction Capacitance
T
J
= 25
C
T
J
= 125
C
Instantaneous Forward Voltage (V)
t, Pulse Duration (sec.)
T
ransient
Thermal Impedance (
C/W)
0.1
0.01
1
10
100
10
1
Fig. 5 Typical Transient
Thermal Impedance
1.2
0.1
T
J
= 150
C
0.6
1.4
100
T
J
= 175
C
T
J
= 100
C
T
J
= 125
C
10
1000
T
J
= 150
C
10000
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
SS2H9 and SS2H10
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88750
2
25-Jun-02
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