55 Commerce Way
Woburn, MA 01801
(781) 935 - 4442
(781) 938 - 5867
www.gilway.com
Description
These chip-type LEDs utilize Alu-
minum Indium Gallium Phosphide
(AlInGaP) material technology.
The AlInGaP material has a very
high luminous efficiency, capable
of producing high light output
over a wide range of drive
currents. The available colors in
this surface mount series are
592 nm Amber, 605 nm Orange,
626 nm Red for AS AlInGaP and
631 nm red for TS AlInGaP.
GHB-0805DU-Y
GHB-0805DU-O
GHB-0805DU-R
GHB-0805DU-R2
2.0 (0.079)
0.3 (0.012)
0.3 (0.012)
0.4 0.15
(0.016 0.006)
POLARITY
CATHODE
MARK
0.8 (0.031)
0.4 0.15
(0.016 0.006)
1.4
(0.055)
0.62 (0.024)
LED DIE
DIFFUSED
EPOXY
PC BOARD
SOLDERING
TERMINAL
1.25 (0.049)
CATHODE LINE
Notes:
1. Dimensions in mm.
2. Tolerance 0.1 mm unless otherwise noted.
Device Selection Guide
Footprint
AS AlInGaP
AS AlInGaP
AS AlInGaP
TS AlInGaP
Package
(mm)
[1,2]
Amber
Orange
Red
Red
Description
2.0 x 1.25 x 0.8
GHB-0805DU-Y
GHB-0805DU-O
GHB-0805DU-R
GHB0805DU-R2
Untinted, Diffused
A
Tbsolute Maximum Ratings
= 25C
A
Parameter
Units
[1,2]
DC Forward Current
30
30
mA
Power Dissipation
75
81
mW
Reverse Voltage (I
R
= 100mA)
5
5
V
LED Junction Temperature
95
95
C
Operating Temperature Range
30 to +85
30 to +85
C
Storage Temperature Range
40 to +85
40 to +85
C
Soldering Temperature
See IR soldering profile (Figure 7)
Notes:
1. Derate linearly as shown in Figure 4.
2. Drive currents above 5 mA are recommended for best long term performance.
GHB-0805DU-Y
GHB-0805DU-O
GHB-0805DU-R
GHB-0805DU-R2
Electrical Characteristics
T
A
= 25C
Forward Voltage
Reverse Breakdown
Capacitance C
Thermal
V
F
(Volts)
V
R
(Volts)
(pF), V
F
= 0,
Resistance
@ I = 20 mA
@ I = 100m A
f = 1 MHz
Rq
= (C/W)
F
R
J-PIN
Parameter Number
Typ. Max.
Min.
Typ.
Typ.
GHB-0805DU-Y 1.9 2.4
5
45
300
GHB-0805DU-O 1.9 2.4
5
45
300
GHB-0805DU-R 1.9 2.4
5
45
300
GHB-0805DU-R2 2.2 2.6
5
35
300
Optical Characteristics
T
A
= 25C
Luminous
Color,
Viewing
Luminous
Intensity
Peak
Dominant
Angle
Efficacy
I
v
(mcd)
Wavelength
Wavelength
2 q
1/2
h
v
Part
@ 20 mA
[1]
l
peak
(nm)
l
[2]
d
(nm)
Degrees
[3]
(lm/w)
Number
Color
Min. Typ.
Typ.
Typ.
Typ.
Typ.
GHB-0805DU-Y AS Amber
25 90
595
592
170
480
GHB-0805DU-O AS Orange
25 90
609
605
170
370
GHB-0805DU-R AS Red
25 90
637
626
170
155
GHB-0805DU-R2 TS Red
40 165
643
631
170
122
Notes:
1. The luminous intensity, I
v
, is measured at the peak of the spatial radiation pattern which may not be aligned with the mechanical axis of the
lamp package.
2. The dominant wavelength, l
d
, is derived from the CIE Chromaticity Diagram and represents the perceived color of the device.
3. q
1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity.
WAVELENGTH nm
AS AlInGaP
AMBER
TS AlInGaP
RED
R
E
L
A
T
I
V
E
I
N
T
E
N
S
I
T
Y
1.0
0.5
0
500
550
600
650
700
750
AS AlInGaP
ORANGE
A
RS
E D
AlInGaP
100
10
1
0.1
1.5
1.7
1.9
2.1
2.5
VF FORWARD VOLTAGE V
I F
F
O
R
W
A
R
D
C
U
R
R
E
N
T
m
A
TS AlInGaP
2.3
AS AlInGaP
0
5
15
30
IF
1.4
1.0
0.4
0
FORWARD CURRENT mA
L
U
M
I
N
O
U
S
I
N
T
E
N
S
I
T
Y
(
N
O
R
M
A
L
I
Z
E
D
A
T
2
0
m
A
)
0.8
0.6
0.2
10
20
1.2
25
35
0
0
5
20
60
80
100
I F
M
A
X
.
M
A
X
I
M
U
M
F
O
R
W
A
R
D
C
U
R
R
E
N
T
m
A
TA
30
25
15
10
40
AMBIENT TEMPERATURE C
20
RqJ-A = 800C/W
RqJ-A = 600C/W
RqJ-A = 500C/W
R
E
L
A
T
I
V
E
I
N
T
E
N
S
I
T
Y
1.00
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
ANGLE
0.90
-70
-50
-30
0
20 30
50
70
90
-90
-20
-80
-60
-40
-10
10
40
60
80
1.2 (0.047)
1.2
(0.047)
0.9
(0.035)
1.2
(0.047)
Recommended soldering pattern for GHB-0805DU-Y/O/R/R2
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