LOW-LIGHT-LEVEL
MEASUREMENT
IN THE NIR
NIR
(NEAR INFRARED:1.4
m/1.7m)
PHOTOMULTIPLIER TUBES
R5509-42/R5509-72
with EXCLUSIVE COOLERS
OVER VIEW
FEATURES
InAlAs/InGaAs
single quantum wells
Sample 1
Photoluminescence spectra emitted
from a sample with different InGaAs
well widths.
This data proves that intensity distrib-
ution of the spectrum corresponding
to each quantum well varies with the
excitation light power.
APPLICATION EXAMPLE:
Photoluminescence measurement
Hamamatsu near infrared photomultiplier tubes (NIR-PMT)
R5509-42 and -72 have newly developed photocathodes with
extended spectral response ranges to 1.4
m or 1.7 m
where beyond 1.1
m have been the limit of conventional
photocathodes. NIR-PMTs the R5509-42 and -72 not only
have these new spectral response ranges, but also have
good features of conventional photomultiplier tubes for fast
time response and photon counting performance, which allow
weak light detection in the near infrared region. They can
solve the problems of low sensitivity and slow time response
in other conventional near infrared detectors like a germani-
um diode which is so far commonly used in this range.
GUsing a "low power excitation light"
allows high-precision measurement not
affected by strong excitation light.
High gain and low noise improve the detection
limit.
GFlat response from visible to near IR
minimize spectral sensitivity correction.
The spectral response covers a wide range from
300 nm to 1.4
m or 1.7 m.
GPhotoluminescence from a room
temperature sample can be measured.
High sensitivity enables weak light emission
measurement.
GTime resolved measurement in near IR
is realized.
Fast time response (Rise time: 3 ns).
TPMHF0435
77K
Sample structure:
InAlAs/InGaAs (SQWs)/InP(sub)
TPMHB0627EB
1100
1200
1300
1400
WAVELENGTH (nm)
1500
1600
1700
INTENSITY (RELATIVE)
EXCITATION LIGHT
POWER: 8
W
EXCITATION LIGHT
POWER: 50
W
EXCITATION LIGHT
POWER: 0.6mW
EXCITATION LIGHT
POWER: 3mW
30
60
100
InGaAs
50
InAlAs
300
InGaAs
30
InAlAs
300
InGaAs
60
InAlAs
300
InGaAs
100
InAlAs
3000
Fe doped
InP (100) sub.
EXCITATION LIGHT:
SHG Nd: YAG (532 nm)
SLIT: 0.2
0.2 mm
SAMPLE TEMPERATURE:
77K
SAMPLE TEMPERATURE
Undoped SI-GaAs
Sample 3
Emission from deep levels in a semi-
insulating GaAs substrate at room
temperatures was clearly observed.
Undoped SI-InP
Sample 2
Emission from deep levels in a semi-
insulating InP substrate at room tem-
perature was clearly observed.
Data shows that intensity distribution
of the photoluminescence spectrum
changes with excitation light power.
Using a "low power excitation light" al-
lows high-precision measurement not
subject to variations in excitation light
intensity. It is therefore essential to
use "low power excitation light" in or-
der to measure emission from deep
levels and total band-to-band transi-
tion.
APPLICATION EXAMPLES
Photoluminescence measurement
77K
300K
77K
300K
TPMHB0621EA
TPMHB0622EA
TPMHB0619EA
TPMHB0620EA
700
800
900
1000
1200
1100
WAVELENGTH (nm)
1400
1300
1600
1500
1700
INTENSITY (RELATIVE)
EXCITATION LIGHT
POWER: 0.6 mW
EXCITATION LIGHT
POWER: 3 mW
X10
X1
X1
X10
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5
0.5 mm
SAMPLE TEMPERATURE: 300K
800
900
1000
1200
1100
WAVELENGTH (nm)
1400
1300
1600
1500
INTENSITY (RELATIVE)
EXCITATION LIGHT
POWER: 0.6 mW
EXCITATION LIGHT
POWER: 0.05 mW
EXCITATION LIGHT
POWER: 3 mW
EXCITATION LIGHT
: SHG Nd: YAG (532 nm)
SLIT: 0.5
0.5 mm
SAMPLE TEMPERATURE: 77K
700
800
900
1000
1200
1100
WAVELENGTH (nm)
1400
1300
1600
1500
1700
INTENSITY (RELATIVE)
EXCITATION LIGHT
POWER: 0.6 mW
EXCITATION LIGHT
POWER: 3 mW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5
0.5 mm
SAMPLE TEMPERATURE: 300K
700
800
900
1000
1200
1100
WAVELENGTH (nm)
1400
1300
1600
1500
1700
INTENSITY (RELATIVE)
EXCITATION LIGHT
POWER: 2 nW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5
0.5 mm
SAMPLE TEMPERATURE: 77K
( )
room
temperature
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
( )
room
temperature
Data was measured with a near infrared
measurement system described later.
Data was measured with a near infrared
measurement system described later.
B-Doped Si (111)
Sample 4
low resistivity wafer
> 0.02 kcm
Silicon, the indirect bandgap semicon-
ductor, has lower photoluminescence
emission compared with direct band-
gap semiconductors such as GaAs,
InP, etc. However, the NIR-PMT has
made it possible to observe a clear
photoluminescence spectra from a
room temperature silicon wafer even
at low power excitation lights.
Clear photolumines-
cence spectra can
be observed at room
temperature, even in
faint emission from a
high resistivity silicon
wafer.
high resistivity wafer
> 5 kcm
77K
300K
77K
300K
300K
TPMHB0623EA
TPMHB0664EA
TPMHB0624EA
TPMHB0625EA
TPMHB0626EA
900
1000
1200
1100
WAVELENGTH (nm)
1400
1300
INTENSITY (RELATIVE)
EXCITATION LIGHT
POWER: 3 mW
EXCITATION LIGHT
POWER: 0.6 mW
EXCITATION LIGHT
POWER: 0.05 mW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5
0.5 mm
SAMPLE TEMPERATURE: 300K
900
1000
1200
1100
WAVELENGTH (nm)
1400
1300
INTENSITY (RELATIVE)
EXCITATION LIGHT
POWER: 3 mW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.05
0.05 mm
SAMPLE TEMPERATURE: 77K
900
1000
1200
1100
WAVELENGTH (nm)
1400
1300
INTENSITY (RELATIVE)
EXCITATION LIGHT
POWER: 3 mW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5
0.5 mm
SAMPLE TEMPERATURE: 300K
( )
room
temperature
( )
room
temperature
900
1000
1200
1100
WAVELENGTH (nm)
1400
1300
INTENSITY (RELATIVE)
EXCITATION LIGHT
POWER: 3 mW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.05
0.05 mm
SAMPLE TEMPERATURE: 77K
Basic Structure
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
(room temperature)
Data was measured with a near infrared
measurement system described later.
Data was measured with a near infrared measurement system described later.
Figure shows PL spectrum at the room temperature
from InAs quantum dots covered with InGaAs layer.
Size and uniformity of quantum dots can be estima-
ted from the peak wavelength and the FWHM of PL
spectrum.
However, when excitation power is increased, lumi-
nescence of shorter wavelength (1200 nm) becomes
strong, and the estimate of exact peak wavelength
and the FWHM becomes impossible.
Therefore, it is important that excitation power must
be kept as weak as possible for precise measure-
ment.
For this reason, a high sensitivity detector is re-
quired.
InAs/InGaAs
quantum dots structure
Sample 5
InGaAs 15 nm
InAs dots
InGaAs 5 nm
GaAs buffer 300 nm
GaAs (100) substrate
WAVELENGTH (nm)
INTENSITY (RELATIVE)
1200
1050
1100
1150
1350
1250
1300
1450
1400
EXCITATION
LIGHT
30 mW
3 mW
0.3 mW
0.03 mW
0.003 mW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.2 mm / 0.2 mm
SAMPLE TEMPERATURE: 300 K
Sample 6
B-Doped Si (111)
Sample 7
InGaAsP/InP
Sample 8
APPLICATION EXAMPLES
Photoluminescence measurement
GComparison with Ge PIN photodiode
low resistivity wafer 0.005-0.2
cm
300K
TPMHB0451EC
77K
TPMHB0453EC
( )
room
temperature
1200
1000
1400
WAVELENGTH (nm)
INTENSITY (RELATIVE)
R5509-42
Ge PIN-PD
(77 K)
EXCITATION LIGHT: Ar LASER (514.5 nm)
SAMPLE TEMPERATURE: 300 K
1200
1300
1250
1350
1400
WAVELENGTH (nm)
INTENSITY (RELATIVE)
R5509-72
Ge PIN PD
(77 K)
EXCITATION LIGHT: Ar LASER (514.5 nm)
200
W
SAMPLE TEMPERATURE: 77 K
77K
300K
TPMHB0617EA
TPMHB0618EA
( )
room
temperature
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
Data was measured with a near infrared
measurement system described later.
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
InGaAsP/InP
An epitaxial wafer at the room temper-
ature can be evaluated.
Photoluminescence measurement in
77K sample is possible at low power
excitation lights from a few to tens of
micro-watts.
p + InP SUB
350
m
p + InP 2
m
p - InGaAsP
2
m
p - InP
0.02
m 2 10
16
cm
-3
TPMHC0187EB
1100
1200
1300
1400
WAVELENGTH (nm)
1500
1600
1700
INTENSITY (RELATIVE)
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5
0.5 mm
SAMPLE TEMPERATURE: 300K
EXCITATION LIGHT
POWER: 0.6 mW
EXCITATION LIGHT
POWER: 3 mW
1100
1200
1300
1400
WAVELENGTH (nm)
1500
1600
1700
INTENSITY (RELATIVE)
EXCITATION LIGHT POWER: 8
W
EXCITATION LIGHT POWER: 50
W
EXCITATION LIGHT POWER: 0.6 mW
EXCITATION LIGHT POWER: 3 mW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.2
0.2 mm
SAMPLE TEMPERATURE: 77K
The R5509-42 PMT provides high detection effi-
ciency that allows detecting a distinct photolumi-
nescent peak with a high S/N ratio from a room
temperature sample.
The data were taken with a relatively weak excita-
tion in order to compare with a germanium detec-
tor (Ge PIN PD) which did not show a clear peak.
InGaAs/InP photoluminescence measurements were
performed under weak excitation conditions in order
to compare the detection limit between the R5509-72
and a Ge PIN photodiode. The result proves that the
R5509-72 allows to detect a peak output in the vicinity
of 1.3
m which is undetectable with the Ge PIN pho-
todiode.
In addition to the improvement in the detection limit at
low light levels in the NIR region, the R5509-72 pro-
vides excellent time response, therefore, time-resolved
photometry in the NIR region is now possible.
InAs/InP
Sample 10
Cathodoluminescence (CL) measurement
Rhodamine B in Ethanol Solution
(2
10
-2
mol/L)
Sample 9
Measurement of Raman spectroscopy
10K
Condition
Electron
Probe
Accelerating Voltage
Current
5 kV
10 nA
The data on the right show images of
cathodoluminescence (CL) emitted from
InAs islands in an InAs/InP multiple
quantum well structure, observed with a
scanning electron microscope (SEM) to
which a light collection system and a
monochromator were installed. The right-
hand CL images were taken with the
SEM using a Ge PIN photodiode. These
images are not clear due to external
noise such as cosmic rays. In contrast,
the left-hand data taken with an R5509-
42 photomultiplier tube shows clear,
sharp CL images with a high S/N ratio.
The R5509-42 allows high-sensitivity CL
measurements in the near infrared re-
gion, which are expected to prove useful
in optical evaluations of samples, analy-
sis of inorganic or organic substances,
and other near infrared spectroscopy.
Cathodoluminescence (CL) Measurement
When a sample is irradiated by high-veloc-
ity electron beams, electron-hole pairs in
the sample are excited and then recom-
bine while producing a characteristic lumi-
nescence known as cathodoluminescence
(CL). Information on the internal electron
structures of the sample can be studied by
measuring this luminescence.
SAMPLE TEMPERATURE
Raman spectroscopy is effective in
studying the structure of molecules in a
solution. In particular, near infrared Ra-
man spectroscopy enables measure-
ment of samples which were previously
impossible with conventional methods
using visible light excitation because of
the influence of fluorescence. In this ap-
plication, clear Raman spectra of solute
rhodamine B (marked by
M) are meas-
ured, as well as a Raman spectrum of
ethanol solution. This data was obtained
with weak excitation light averaging 10
mW output using pulsed excitation light
and gate detection method under fluor-
escent room lighting conditions.
TPMHB0452EB
1600
1200
1400
1000
800
RAMAN SHIFT (cm
-1
)
INTENSITY
RHODAMINE B POWDER
ETHANOL
SAMPLE
EXCITATION LIGHT: LD-PUMPED
ND: YAG (1064 nm)
10 mW, 10 ns pulse, 10 kHz
SAMPLE TEMPERATURE: 77 K
( )
room
temperature
990nm
990nm
1010nm
1020nm
1030nm
1040nm
R5509-42
Ge PIN-PD
77K
Photos: By courtesy of Prof. Y. Takeda, Dept. of Materials Science and Engineering, Graduate
School of Engineering, Nagoya University;
Prof. A. Nakamura, Center for Integrated Research in Science and Engineering, Nagoya
University
300K
SAMPLE TEMPERATURE
APPLICATION EXAMPLES
300K
300K
300K
300K
TPMHB0665EA
TPMHB0666EA
TPMHB0667EA
TPMHB0668EA
( )
room
temperature
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
( )
room
temperature
( )
room
temperature
Data was measured with a near infrared
measurement system described later.
Data was measured with a near infrared
measurement system described later.
Using the R5509-42 and a pulsed las-
er, singlet oxygen emission with a
peak at 1270 nm were efficiently de-
tected by signal processing with a ga-
ted pulse counter, reducing effects of
fluorescence.
(Data obtained by CW YAG laser ex-
citation is also shown in the same
graph for comparison.)
The graph on the right shows detec-
tion limits evaluated by changing the
concentration of the photosensitizer
Rose Bengal. This proves that emis-
sions from singlet oxygen of low con-
centration, even only 1 nmol/L, can be
Lifetime characteristics and emission
spectrum of the singlet oxygen when
the photosensitizer Rose Bengal was
dissolved in acetone, methanol and
water were measured.
Singlet oxygen lifetime can be meas-
ured with high accuracy, by using ga-
ted photon counting techniques that
utilize high-speed response of a near
infrared PMT and allow continuous
scan of signal pulses obtained in a
short gate time (sampling time).
In solvents which singlet oxygen has a
long life, there is little singlet oxygen
that thermally disappears so more sin-
glet oxygen disappears during the
emission process. This results in an
increase in the entire emission level.
Measurement of singlet oxygen
Singlet oxygen
Sample 11
Rose Bengal in pure water
Singlet oxygen
Sample 12
Rose Bengal in acetone, methanol and water
1150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
1200
1250
WAVELENGTH (nm)
1300
1350
INTENSITY (RELATIVE)
EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm)
12 mJ, PULSE WIDTH: 10 ns, 20 Hz
SLIT: 2 mm/ 2 mm
GATED DELAY TIME: 1.5
s
GATE TIME: 5
s
CW
GATED PHOTON COUNTING METHOD
GATED PHOTON COUNTING METHOD
( )
room
temperature
1200
0
0.2
10
4
0.4
10
4
0.6
10
4
0.8
10
4
1.0
10
4
1.2
10
4
1.4
10
4
1220
1240
1260
WAVELENGTH (nm)
1300
1280
1320
1340
INTEGRATED COUNTS (100 SHOT)
EXCITATION LIGHT:
PULSE SHG Nd:
YAG (532 nm)
2.5 mJ,
PULSE WIDTH:
10 ns, 20 Hz
SLIT: 2 mm / 2 mm
GATED DELAY TIME:
3
s
GATE TIME: 50
s
CH
3
COCH
3
CH
3
OH
H
2
O
1100
10
1
10
2
10
3
10
4
10
5
1150
1200
1250
WAVELENGTH (nm)
1350
1300
1400
1450
SIGNAL OUTPUT (COUNTS)
EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm)
12 mJ, PULSE WIDTH: 10 ns, 20 Hz
SLIT: 2 mm / 2 mm
CONCENTRATION
OF ROSE BENGAL
10
mol/L
1
mol/L
1 nmol/L
0
10
0
10
1
10
2
10
3
10
4
10
20
30
40
TIME (
s)
70
50
60
80
90
100
INTEGRATED COUNTS (500 SHOT)
EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm)
2.5 mJ, PULSE WIDTH: 10 ns, 20 Hz
SLIT: 2 mm / 2 mm
GATE (sampling) TIME: 1
s
=62 s in CH
3
COCH
3
(ACETONE)
=11 s in CH
3
OH
(METHANOL)
=3.7 s in H
2
O
(WATER)
GREFERENCE
Measurement System
Most of the application data in this sheet were measured with the following system using an R5509 series PMT.
Time resolved measurement and gated measurement were performed with a pulsed YAG laser and a photon counter in place of CW
laser and lock-in amplifier.
Photocathode and Photomultiplier tubes
M. Niigaki, T. Hirohata, T. Suzuki, N. Oishi, S. Furuta, H. Kan and T. Hiruma, "Near Infrared Photomultiplier with Transferred Electron Photoca-
thode", Bulletin of the Research Institute of Electronics, Shizuoka Univ. 30-3, 189 (1995)
M. Niigaki, T. Hirohata, T. Suzuki, H. Kan and T. Hiruma, "Field-assisted photoemission from InP/InGaAsP photocathode with p/n junction",
Appl. Phys. Lett., 71, 2493 (1997)
Photoluminescence
S. Furuta, K. Kuroyanagi, M. Niigaki, T. Hirohata, H. Kan and T. Hiruma, "Characterization of Doped-Si and SiGe Quantum Well Using Near-In-
frared Photomultiplier Tube", Bulletin of the Research Institute of Electronics, Shizuoka Univ. 30-3, 233 (1995).
S. Fukatsu, H. Akiyama, Y. Shiraki and H. Sakaki, J. Cryst. Growth, "Quantitative analysis of light emission from SiGe quantum wells", 157 1
(1995)
S. Fukatsu, H. Akiyama, Y. Shiraki and H. Sakaki, "Radiative recombination in near-surface strained Si
1
-x
Ge
x
/Si quantum wells", Appl. Phys.
Lett., 67, 3602 (1995)
S. Fukatsu, Y. Mera, M. Inoue, K. Maeda, H. Akiyama and H. Sakaki, "Time-resolved D-band luminescence in strain-relieved SiGe/Si", Appl.
Phys. Lett., 68, 1889 (1996)
M. Tajima, S. Ibuka, H. Aga and T. Abe, "Characterization of bond etch-back silicon-on-insulator wafers by photoluminescence under ultravio-
let excitation", Appl. Phys. Lett., 70, 231 (1997)
M. Tajima and S. Ibuka, "Luminescence due to electron-hole condensation in silicon-on-insulator", Jpn. J. Appl. Phys., 84, 2224 (1998)
Y. Mita, M. Akami and S. Murayama, "Infrared photoluminescence and optical characteristics in Ge-doped ZnSe crystals", Appl. Phys. Lett., 76,
2223 (2000)
Takashi Suemasu, Yoichiro Negishi, Kenichiro Takakuma and Fumio Hasegawa, "Room Temperature 1
m Electroluminescence from a Si-
Based Light Emitting Diode with
-FeSi
2
Active Region", Jpn. J. Appl. Phys., 39, L1013 (2000)
Shigero Ibuka and Michio Tajima, "Characteristics of Silicon-on-Insulator Wafers by Photoluminescence Decay Lifetime Measurement", Jpn. J.
Appl. Phys., 39, L1124 (2000)
Singlet oxygen
O. Shimizu, J. Watanabe, K. Imakubo and S. Naito, "Formation of Singlet Oxygen Photosensitized by Aromaic Amino Acids in Aqueous Solu-
tions", Chemistry Lett., 19, 203 (1997)
O. Shimizu, J. Watanabe and K. Imakubo, "Photon-Counting Technique Facilitates both Time-and Spectra-Resolved Measurements of Near-IR
Emission of Singlet Oxygen O
2
(
1
g
) in Aqueous Solution", J. Phys. Soc. Jpn., 66, 268 (1997)
LENS
LENS
COOLER
NIR-PMT
COMPUTER
DRY NITROGEN
LIQUID NITROGEN
CONTAINER
SAMPLE
MIRROR
MIRROR
FILTER
FILTER
LASER
LN
2
DEWAR
OPTICAL
CHOPPER
MONOCHRO-
MATOR
LOCK-IN
AMP
ISTRUCTURE
Excitation light: LD-pumped Nd: (SHG) YAG laser,
=532 nm, maximum output=50 mW
or
Pulsed Nd: (SHG) YAG laser,
=532 nm, pulse energy more than 12 mJ,
repetition rate=20 Hz, pulse with=5 ns to 7 ns
Monochromator: Czerny-Turner type
Aperture ratio: F=3, Focal length: 100 mm,
Diffraction grating: grooves/mm=600,
Brazed wavelength=1
m, Wavelength resolution: 2 nm
Detector: NIR PMT R5509-42 or R5509-72
Exclusive cooler PC176TSCE005 [Cooling Temperature: -80
C]
Sample cell: LN
2
dewar or without
Signal processing: Lock-in amplifier or photon counter
ISYSTEM CONFIGURATION
WITH CW LASER + LOCK-IN AMPLIFIER
TPMOC0155EA
The samples 2 to 6 , 11 and 12 were measured with the measurement system shown below:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
SPECIFICATIONS
DIMENSIONAL OUTLINE AND BASING DIAGRAM
GGENERAL
Parameter
Spectral Response
Photocathode
Window
Dynode
Base
Recommended Operating Ambient Temperature
300 to 1400
InP/InGaAsP
300 to 1700
InP/InGaAs
nm
--
mm
--
--
--
--
--
C
3
8
Borosilicate glass
Cu-BeO
Line focused
10
21-pin base
-80
Material
Minimum Effective Area
Material
Secondary Emitting Surface
Structure
Number of Stage
R5509-42
R5509-72
Unit
NOTE:
aat 1300 nm (R5509-42), at 1500 nm (R5509-72) bAfter 30 minutes' storage in darkness
The dedicated coolers PC176TSCE005 and PC176TSCE006 are shipped after adjusting the voltage divider circuit to provide the optimum voltage
distribution ratio that best matches the PMT.
GCHARACTERISTICS (at -80 C, Supply voltage: -1500 V dc)
Parameter
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current
b
Anode Dark Counts
b
Time Response
Quantum Efficiency
a
Radiant
a
Radiant
a
Anode Pulse Rise Time
Electron Transit Time
Transit Time Spread
--
--
--
1
10
6
5
2
10
4
3
23
1.5
--
--
--
--
10
--
--
--
--
0.48
5
1000
2
10
5
--
--
--
--
--
Typ.
Max.
Min.
--
--
--
1
10
6
50
2
10
5
3
23
1.5
--
--
--
--
100
--
--
--
--
0.29
3.5
700
2
10
5
--
--
--
--
--
Typ.
Max.
Min.
%
mA/W
A/W
--
nA
s
-1
ns
ns
ns
R5509-42
R5509-72
Unit
GMAXIMUM RATING (Absolute maximum values)
Parameter
Supply Voltage
Average Anode Current
Storage Ambient Temperature
Operating Ambient Temperature
1750
250
2
-90 to +50
-90 to -70
V dc
V dc
A
C
C
Between Anode and Cathode
Between Anode and Last Dynode
Value
Unit
TPMHA0283EC
TPMHA0284EC
51
1
3
8
PHOTOCATHODE
(3
8)
20
1
88
2
14 MAX.
PHOTO-
CATHODE
HA COATING
LIGHT
SHIELD
15
33 2
90
2.5
Bottom View
SHORT PIN
1
2
3
4
5
6
7
9
8
11 12
13
14
15
16
17
18
19
20
21
K
DY2
DY4
DY1
P
DY8
DY10
IC
IC
IC
IC
DY9
DY7
DY5
DY3
DY6
IC
B
IC
IC
IC
10
Top View
PIN No.3
PIN No.1
PIN No.14
DY
K
P
B
IC
: Dynode
: Photocathode
: Anode
: Bias Electrode
: Internal
Connection
(Do not use)
[Cautions for operation]
GOperate the tube at the anode current less
than 2
A while the entire photocathode is il-
luminated in order to avoid the photocathode
damage due to excessive cathode current.
GIn order to protect the photocathode, the high
voltage should be increased or decreased
gradually.
GWhen the R5509-42 or -72 shall to be opera-
ted, do not supply the high voltage before the
tube is cooled down to -70
C at least.
GUse the exclusive cooler PC176TSCE005 or
PC176TSCE006 for cooling.
[Warranty]
GA cooler other than specified may cause a
trouble in the tube like loss of performance or
a mechanical damage. Any trouble caused
in association with a cooler other than speci-
fied shall not be subject to warranty.
GHamamatsu photomultiplier tubes are war-
ranted to the original purchase for a period of
12 months following the date of shipment.
The warranty is limited to repair or replace-
ment of any defective material due to defects
in workmanship or materials used in manu-
facture.
(Unit: mm)
CHARACTERISTICS FIGURES
TPMHB0426EB
* Spectral response characteristics when used with the dedicated cooler
GSpectral Response
GTypical Gain (R5509-42, -72)
TPMHB0403EA
TPMHB0425EA
GTemperature Characteristics of Dark Current
(After 30 minutes storage in darkness)
TPMHB0404EA
GSingle Photoelectron Pulse Height
Distribution (PHD)
R5509-42
R5509-72
TPMHB0406EA
GOutput Waveform (R5509-42)
TPMHB0428EA
500
SUPPLY VOLTAGE (V)
GAIN
10
2
10
8
2000
10
7
10
6
10
5
10
4
10
3
1500
1000
700
-90
-80
-70
TEMPERATURE (
C)
10
-6
10
-7
10
-8
10
-9
10
-10
DARK CURRENT (A)
at 1500V
R5509-42
R5509-72
0
COUNTS PER CHANNEL (1
10
4
)
0
1.4
1000
200
400
600
800
DARK
PHOTON + DARK
1.2
1.0
0.8
0.6
0.4
0.2
CHANNEL NUMBER (ch)
WAVELENGTH OF INCIDENT LIGHT
SUPPLY VOLTAGE
SIGNAL + DARK COUNTS
DARK COUNTS
AMBIENT TEMPERATURE
: 1300 nm
: -1500 V dc
: 33 600 s
-1
: 16 900 s
-1
: -80
C
0
CHANNEL NUMBER (ch)
COUNTS PER CHANNEL (1
10
4
)
0
14
1000
200
400
600
800
DARK
PHOTON + DARK
12
10
8
6
4
2
WAVELENGTH OF INCIDENT LIGHT
SUPPLY VOLTAGE
SIGNAL + DARK COUNTS
DARK COUNTS
AMBIENT TEMPERATURE
: 1500 nm
: -1500 V dc
: 298 000 s
-1
: 175 000 s
-1
: -80
C
TIME [5 ns/Div]
OUTPUT VOLTAGE [1 mV/Div]
SUPPLY VOLTAGE
RISE TIME
FALL TIME
WAVELENGTH
AMBIENT TEMPERATURE
R
L
: -1500 V dc
: 2.40 ns
: 6.36 ns
: 1300 nm
: -80
C
: 50
200
800
1200
WAVELENGTH (nm)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
10
-3
400
600
1000
1600
1400
10
-2
10
-1
10
0
10
1
10
2
1800
-80
C
CATHODE RADIANT SENSITIVITY
QUANTUM EFFICIENCY
R5509 - 42
R5509 - 72
RELATED PRODUCTS
Exclusive cooler PC176TSCE005 and PC176TSCE006 for R5509-42, -72
IFEATURES
IDIMENSIONAL OUTLINE (Unit: mm)
ISPECIFICATIONS
TACCA0151EF
PC176TSCE005 and PC176TSCE006 are exclusively de-
signed coolers for R5509-42 and -72 using liquid nitrogen.
The dark current of R5509-42 and -72 will be reduced drasti-
cally by cooling so that the PMT will be able to detect very
weak light.
The cooler housing is magnetically and electrostatically shiel-
ded excluding external noises to provide very stable and high
S/N ratio measurement.
Hamamatsu also provides the PC176TSCE006 cooler suitable
for a selfpressurized liquid nitrogen container.
GTemperature controllable range: 0 to -100 C
(R5509-42, -72 operating range shall be: -70 to -90
C)
GExclusive socket assembly with load resistor select-
able circuit
GBuilt-in magnetic electrostatic shield
GBuilt-in warning buzzer for liquid nitrogen supply
shortage
Cooling unit
222
120
152
6-M3
111 O-RING
13
86
PHOTO-
MULTIPLIER
TUBE
PHOTO-
CATHODE
WINDOW FLANGE
EVACUATED
WINDOW
HOUSING FRONT
PANEL
57
222
111
111
120
6-M3
PHOTOCATHODE* (3
8)
109
330
13
86
CENTER OF
PHOTOCATHODE
PHOTOMULTIPLIER
TUBE
-HV (SHV-R)
SIGNAL OUTPUT (BNC-R)
SOCKET ASSEMBLY
LN
2
IN (OUT)
59
LN
2
OUT (IN)
80.5
43
152.4
85.7
114
152.4
66.7
4-No.10-32 UNC-2B
LOAD RESISTOR
ADJUSTOR SWITCH
4-M6
152
SIDE VIEW
BOTTOM VIEW
SOCKET ASSEMBLY
* The socket assembly can be rotated by 90 degrees in order to match the shape of the input light.
Parameter
Coolant medium
Temperature Controllable Range
Cool-down Time
Liquid Nitrogen Consumption rate (Max.)
Dry Nitrogen
Socket Assembly
AC Input Voltage
Power Consumption
Operating Ambient Temperature
Weight
Components
Liquid Nitrogen Vaporization
0
C to -100 C (continuously adjustable)
Approx. 2 h (-80
C setting)
0.75 L/h (-100
C setting)
158
A (PMT Supply Voltage: -1750 V)
SHV-R
BNC-R
50
/ 1 k/ 100 k/ 10 M/ Open
100 V to 120 V, 220 V to 240 V (50/60 Hz)
15 VA
Less than +30
C
Approx. 6 kg
35 kPa
47 L (14.7 MPa)/100 h
Approx. 11 kg
--
--
Approx. 11 kg
Gas Pressure
Consumption rate
Voltage Divider Current
-HV Connector
Signal Connector
Load Resistor
Cooling Unit
Controller and others
PC176TSCE005
PC176TSCE006
Cooling Unit, Controller, Solenoid Control Cable,
Solenoid Valve, 3/8" OD Rubber Tube,
Insulated Transfer Hose, LN
2
Transfer Head for
35 mm to 40 mm Neck OD LN
2
Dewar
Cooling unit, Controller, Solenoid Control Cable, Flow
Limit Valve, Solenoid Valve, Insulated Transfer
Hose, Control Solenoid with Connecting Hose with
3/4-16UNF or PT 1/4 Screws in End
ICONNECTION DIAGRAM
GPC176TSCE005
GPC176TSCE006
IOTHER ACCESSORIES REQUIRED
TACCC0090EC
GLiquid nitrogen dewar
Non-pressurized dewar having a capacity of 10
to 50 litters, and the neck outer diameter be-
tween 35 and 40 mm.
GHigh voltage power supply for the photomul-
tiplier tube (negative high voltage)
Output voltage: more than -1750 V
Output current: more than 0.2 mA
Low ripple, High stability
GDry nitrogen gas, pressure regulator (sec-
ondary pressure 35 kPa), pressure gauge
In order to supply a proper amount of liquid nitro-
gen to the cooling unit, an external pressure
needs to be added to the dewar. A pressure
regulator capable of reducing a secondary pres-
sure to 35 kPa is necessary when used with a
dry nitrogen gas container. Connect the 3/8"
rubber tube to the exit of the pressure regulator.
IOTHER ACCESSORIES REQUIRED
GLiquid nitrogen dewar
Self pressurized dewar having a matching screw
of either 3/4-16UNF felmale (removable) or PT
1/4 male.
GHigh voltage power supply for the photomul-
tiplier tube (negative high voltage)
Output voltage: more than -1750 V
Output current: more than 0.2 mA
Low ripple, High stability
AC 100 V to 120 V,
AC 200 V to 240 V
*DEWAR OF LN
2
*DRY NITROGEN
GAS SOURCE
COOLING UNIT
INSULATED
TRANSFER
HOSE
WINDOW
HEATER CABLE
SOLENOID
CONTROL
CABLE
*PRESSURE
REGULATOR
SOLENOID VALVE
3/8" OD
RUBBER TUBE
LN
2
TRANSFER HEAD
*NOT SUPPLIED
CONTROLLER
*NOT SUPPLIED
TACCC0116EA
AC 110 V to 120 V,
AC 220 V to 240 V
*LN
2
DEWAR
COOLING UNIT
INSULATED
TRANSFER HOSE
WINDOW HEATER CABLE
SOLENOID
VALVE
PT1/4
3/4-16UNF
SOLENOID CONTROL CABLE
The maximum pressure from the LN
2
dewer
to the solenoid valve is 300 kPa.
CONTROLLER
TPMH1267E02
SEPT. 2001 IP
Printed in Japan (1500)
RELATED PRODUCTS
Peripheral devices and options
GRelay optics
The relay optics is designed for efficient light collection from
the exit slit of a monochromator to the PMT photocathode.
Optical axis adjustment can also be made precisely.
A mechanical shutler is mounted.
For more information, please contact our sales office.
GInput window with condenser lens
The input window of the PC176TSCE005 and PC176TSCE006
are also available with a condenser lens mounted on its in-
ner side. This window efficiently collects the incoming colli-
mated light onto the PMT photocathode and can be easily
replaced with the standard window.
GHigh-voltage power supply C3350
Output voltage (DC): 0 V to
3000 V, Output current: 10 mA,
Bench-top high-voltage power supply with high stability and
low ripple.
Related Products for Photon Counting
GPreamplifiers
It is recommended that a fast preamplifier is used in front of
the photon counting unit C3866 or C6465.
C6438 (DC to 50 MHz) Gain: 20 dB
C5594 (50 kHz to 1.5 GHz) Gain: 36 dB
GPhoton counting units
C3866 high-speed type (maximum count rate: up to 10
7
s
-1
)
with built-in prescaler
C6465 standard type (maximum count rate: up to 10
6
s
-1
)
These photon counting units convert photoelectron pulses
from the R5509 series PMT into a 5 V digital signal. Photon
counting with a high S/N ratio can be performed by connect-
ing the output to a pulse counter. We recommend using
these photon counting units in conjunction with a C6438 or
C5594 series preamplifiers.
GPhoton counting board M7824, M8503
The M7824 photon counting board is designed for direct
plug-in to the ISA bus slot in a PC. The M7824 has a pulse
counter that counts photoelectron pulses converted into logic
(TTL) signals by a photon counting unit, and transfers them
to the PC. The built-in gate function with 50
s (Min.) internal
gate facilitates photon counting with a wide dynamic range.
The M8503 has fast internal gating of 50 ns (minimum) ena-
bling fast time resolved measurement in highly repetitive
(1 MHz Max.) phenomena like fluorescence.
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
HOMEPAGE URL http://www.hamamatsu.com
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
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