High Q.E., Bialkali Photocathode
28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
GENERAL
FEATURES
Parameter
Description
Unit
Spectral Response
Wavelength of Maximum Response
185 to 760
nm
nm
Photocathode
MateriaI
420
Structure
4
pF
Anode to Last Dynode
6
pF
Anode to All Other Electrodes
Minimum Effective Area
Bialkali
Secondary Emitting Surface
Bialkali
mm
Window Material
Weight
8
24
g
45
Dynode
Direct Interelectrode Capacitances
Base
SuitabIe Socket Assembly
UV glass
Circular-cage
Number of Stages
9
11-pin base
JEDEC No. B11-88
E71721(option)
SuitabIe Socket
E67811A (option)
PHOTOMULTlPLlER TUBE
R7517
Spectral Response.......................................
APPLICATIONS
Fluorescence Spectrophotometers
Fluorescence Immuno Assay
SO
2
Monitor (UV Fluorescence)
High Cathode Sensitivity
Luminous ..............................................
Radiant at 420nm ..................................
Quantum Efficiency at 220nm .......................
High Anode Sensitivity (at 1000V)
Luminous ................................................
Radiant at 420nm ...........................
185 to 760 nm
160
A/lm Typ.
105 mA/W Typ.
40% Typ.
1600A/lm Typ.
10.5
10
5
A/W Typ.
Figure 1: Typical Spectral Response
TPMSB0174EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 1998 Hamamatsu Photonics K.K
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
PRELIMINARY DATA
NOV. 1998
0.01
0.1
100
1000
100
200
300
400
500
600
700
800
WAVELENGTH (nm)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
10
1
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Parameter
Min.
Typ.
Max.
Unit
Value
Supply Voltage
Cathode Sensitivity
Anode Sensitivity
Gain
E
Anode Dark Current
F
(After 30 minutes Storage in the darkness)
ENI (Equivalent Noise Input)
G
Time Response
E
Anode Current Stability
K
Quantum Efficiency
at Peak Wavelength
Luminous
B
Radiant
Red/White Ratio
C
Blue
D
Luminous
E
Radiant
Anode Pulse Rise Time
H
Electron Transit Time
Transit Time Spread (TTS)
J
Light Hysteresis
Voltage Hysteresis
--
150
--
--
--
12
1200
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
50
--
--
--
--
--
--
%
A/lm
mA/W
mA/W
--
A/lm-b
A/lm
A/W
A/W
--
nA
W
ns
ns
ns
%
%
40
(at 220nm)
160
71
105
0.01
13
1600
7.1
10
5
10.5
10
5
1.0
10
7
5
1.2
10
-16
2.2
22
1.2
0.1
1.0
210nm
420nm
210nm
420nm
Between Anode and Cathode
Between Anode and Last Dynode
1250
250
0.1
Vdc
Vdc
mA
Average Anode Current
A
Unit
CHARACTERISTlCS (at 25
C)
NOTES
A:
B:
C:
D:
E:
Averaged over any interval of 30 seconds maximum.
The light source is a tungsten filament lamp operated at a distribution tem-
perature of 2856K. Supply voltage is 100 volts between the cathode and
all other electrodes connected together as anode.
Red/White ratio is the quotient of the cathode current measured using a
red filter(Toshiba R-68) interposed between the light source and the tube
by the cathode current measured with the filter removed under the same
conditions as Note B.
The value is cathode output current when a blue filter(Corning CS-5-58
polished to 1/2 stock thickness) is interposed between the light source and
the tube under the same condition as Note B.
Measured with the same light source as Note B and with the voltage distri-
bution ratio shown in Table 1 below.
I:
J:
K:
The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole photo-
cathode is illuminated.
Also called transit time jitter. This is the fluctuation in electron transit time
between individual pulses in the signal photoelectron mode, and may be
defined as the FWHM of the frequency distribution of electron transit times.
Hysteresis is temporary instability in anode current after light and voltage
are applied.
F:
G:
H:
Measured with the same supply voltage and voltage distribution ratio as
Note E after removal of light.
ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in the
output of a photomultiplier tube.
where q= Electronic charge (1.60
10
-19
coulomb).
ldb= Anode dark current(after 30 minutes storage) in amperes.
G= Gain.
f= Bandwidth of the system in hertz. 1 hertz is used.
S= Anode radiant sensitivity in amperes per watt at the wave-
length of peak response.
The rise time is the time for the output pulse to rise from 10% to 90% of the
peak amplitude when the entire photocathode is illuminated by a delta
function light pulse.
ENI=
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
P
Distribution
Ratio
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode
PHOTOMULTlPLlER TUBE R7517
Table 1:Voltage Distribution Ratio
S
2q.ldb.G.
f
TPMSB0002EA
TIME
max.
l
min.
l
i
l
ANODE
CURRENT
0
5
6
7 (minutes)
(1)Current Hysteresis
The tube is operated at 750 volts with an anode current of 1 micro-ampere for
5 minutes. The light is then removed from the tube for a minute. The tube is
then re-illuminated by the previous light level for a minute to measure the
variation.
(2)Voltage Hysteresis
The tube is operated at 300 volts with an anode current of 0.1 micro-ampere
for 5 minutes. The light is then removed from the tube and the supply voltage
is quickly increased to 800 volts. After a minute, the supply voltage is then
reduced to the previous value and the tube is re-illuminated for a minute to
measure the variation.
Hysteresis=
100(%)
lmax. - lmin.
li
Figure 2: Anode Luminous Sensitivity and
Gain Characteristics
Figure 3: Typical Time Response
Figure 4: Typical ENI with Wavelength
TPMSB0175EA
TPMSB0004EB
TPMSB0176EA
500
700
1000
1500
SUPPLY VOLTAGE (V)
10
0
10
1
10
2
10
3
10
4
10
5
ANODE LUMINOUS SENSITIVITY (A/lm)
GAIN
10
3
10
4
10
5
10
6
10
7
10
8
GAIN
ANODE LUMINOUS
SENSITIVITY (MIN.)
ANODE LUMINOUS
SENSITIVITY (TYP.)
600
800
1200
300
500
700
1000
1500
SUPPLY VOLTAGE (V)
TIME (ns)
1
2
4
6
8
10
20
40
60
80
100
RISE TIME
TRANSIT TIME
100
200
300
400
500
600
700
800
WAVELENGTH (nm)
10-
16
10-
15
10-
14
10-
13
10-
12
EQUIVALENT NOISE INPUT (W)
PHOTOMULTlPLlER TUBE R7517
TPMS1059E01
NOV. 1998
Figure 5: Dimensional Outline and Basing Diagram
Figure 6: Socket E678-11A (Option)
Unit: mm
Figure 7: D Type Socket Assembly E717-21 (Option)
WarningPersonal Safety Hazards
Electrical ShockOperating voltages applied to this
device present a shock hazard.
* Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series
DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
TACCA0002ED
TPMSA0005EB
TACCA0008EB
28.5
1.5
8MIN.
T9 BULB
PHOTOCATHODE
24MIN.
49.0
0.25
80MAX.
94MAX.
32.2
0.5
11 PIN BASE
JEDEC No.B11-88
6
7
8
9
10
11
1
2
3
4
5
DY6
DY7
DY8
DY9
P
K
DY1
DY2
DY3
DY4
DY5
DIRECTION
OF LIGHT
Bottom View
(Basing Diagram)
49
38
3.5
33
5
29
18
4
POTTING
COMPOUND
R to R10
C1 to C3
: 330k
: 0.01
F
3.5
33.0
0.3
49.0
0.3
29
38.0
0.3
4.8
41
0.5
450
10
5
31.0
0.5
HOUSING
(INSULATOR)
R10
R9
R8
R7
R6
R5
R4
R3
R2
R1
DY9
DY8
DY7
DY6
DY5
DY4
DY3
DY2
DY1
C3
C2
C1
SIGNAL GND
SIGNAL OUTPUT RG-174/U
(BLACK)
-HV
AWG22 (VIOLET)
P
K
10
POWER SUPPLY GND
AWG22 (BLACK)
SOCKET
PIN No.
PMT
9
8
7
6
5
4
3
2
1
11
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe: Hamamatsu Photonics Norden AB: Frgatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
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