2SC5140
3
160
120
80
40
0
Ambient Temperature Ta (
C)
Collector Power Dissipation Pc (mW)
50
100
150
200
Maximum Collector Dissipation Curve
200
160
120
80
40
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
0
DC Current Transfer Ratio vs.
Collector Current
0.1
1
10
50
V = 5 V
Pulse Test
CE
10
8
6
4
2
1
2
5
10
20
Collector Current I (mA)
50
C
0
V = 5V
CE
Gain Bandwidth Product vs.
Collector Current
V = 1V
CE
Gain Bandwidth Product f (GHz)
T
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
0.1 0.2
0.5
1
2
5
10
20
Collector Output Capacitance vs.
Collector to Base Voltage
1.0
0.8
0.6
0.4
0.2
0
I = 0
f = 1 MHz
E
2SC5140
5
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8
2
3 4 5
1.5
10
S11 Parameter vs. Frequency
1.0
Scale: 4 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
S21 Parameter vs. Frequency
Scale: 0.04 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
S12 Parameter vs. Frequency
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8
2
3 4 5
1.5
10
S22 Parameter vs. Frequency
1.0
2SC5140
6
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8
2
3 4 5
1.5
10
S11 Parameter vs. Frequency
1.0
Scale: 4 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
S21 Parameter vs. Frequency
Scale: 0.04 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
S12 Parameter vs. Frequency
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8
2
3 4 5
1.5
10
S22 Parameter vs. Frequency
1.0
2SC5140
8
Cautions
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3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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