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Электронный компонент: 2SJ486

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2SJ486
Silicon P Channel MOS FET
Low FrequencyPower Switching
ADE-208-512 A
2nd. Edition
Features
Low on-resistance
R
DS(on)
= 0.5
typ. (at V
GS
= 4V, I
D
= 100 mA)
2.5V gate drive devices.
Small package (MPAK).
Outline
1
2
3
1. Source
2. Gate
3. Drain
MPAK
D
S
G
2SJ486
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
10
V
Drain current
I
D
0.3
A
Drain peak current
I
D(pulse)
*
1
0.6
A
Channel dissipation
Pch
150
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1 %
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
--
--
V
I
D
= 10
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
10
--
--
V
I
G
=
100
A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
--
--
1.0
A
V
DS
= 30 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
5.0
A
V
GS
=
6.5V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
0.5
--
1.5
V
I
D
= 10
A, V
DS
= 5V
Static drain to source on state
resistance
R
DS(on)
--
0.5
0.65
I
D
= 100mA
V
GS
= 4V*
1
R
DS(on)
--
0.7
1.2
I
D
= 40mA
V
GS
= 2.5V*
1
Forward transfer admittance
|y
fs
|
0.4
0.65
--
S
I
D
= 100mA
V
DS
= 10V*
1
Input capacitance
Ciss
--
45
--
pF
V
DS
= 10V
Output capacitance
Coss
--
76
--
pF
V
GS
= 0
Reverse transfer capacitance Crss
--
5.4
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
120
--
ns
V
GS
= 4V
Rise time
t
r
--
340
--
ns
I
D
= 150mA
Turn-off delay time
t
d(off)
--
850
--
ns
R
L
= 66.6
Fall time
t
f
--
550
--
ns
Notes: 1. Pulse test
2. Marking is "ZU".
2SJ486
3
Main Characteristics
1.0
0.8
0.6
0.4
0.2
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
Ta = 25
C
Pulse Test
25
C
25
C
Tc = 75
C
200
150
100
50
0
50
100
150
200
1
0.3
0.1
0.03
0.01
0.003
0.001
0.1
0.3
1
3
10
30
100
DC Operation
1 ms
Ta = 25
C
PW = 10 ms
(1 shot)
5 V
4 V
10 V
2.5 V
V = 1.5 V
GS
2 V
1.0
0.8
0.6
0.4
0.2
Channel Dissipation Pch (mW)
Ambient Temperature Ta (
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
V = 10 V
Pulse Test
DS
2SJ486
4
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
10
Ta = 25
C
Pulse Test
2.0
1.4
1.2
0.8
0.4
40
0
40
80
120
160
0
0.01
0.1
1
5
1
2
0.5
0.1
0.2
0.05
0.02 0.05
0.2
0.5
0.01 0.03
0.1
0.3
1
3
10
Pulse Test
4 V
V = 2.5 V
GS
75
C
25
C
Ta = 25
C
DS
Pulse Test
V = 10 V
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Ta = 25
C
Pulse Test
10
5
2
1
0.5
0.2
0.1
0.2 A
0.1 A
4 V
GS
V = 2.5 V
0.1, 0.2 A
0.1, 0.2 A
2SJ486
5
0
4
8
12
16
20
1000
300
100
30
10
3
1
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
1.0
0.8
0.6
0.4
0.2
0
0.4
0.8
1.2
1.6
2.0
V = 0, 5 V
GS
5 V
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
10000
3000
1000
300
100
30
10
t f
r
t
d(on)
t
d(off)
t
0.05
0.1
0.2
0.5
1
V = 4 V, V = 10 V
PW = 5
s, duty < 1 %
GS
DD
2SJ486
6
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 10 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
50
90%
10%
t
f
Switching Time Test Circuit
Waveform
2SJ486
7
Package Dimensions
Unit: mm
0.16
0 ~ 0.1
0.3
+ 0.10
0.06
0.4
+ 0.10
0.05
0.95
0.95
1.9
2.8
+ 0.3
0.1
2.8
+ 0.2
0.6
0.65
+ 0.1
0.3
1.5
0.65
+ 0.1
0.3
1.1
+ 0.2
0.1
Hitachi Code
EIAJ
JEDEC
MPAK
SC59A
TO236Mod
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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