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Электронный компонент: 2SK1579

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2SK1579
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Suitable for low voltage operation
Outline
4
3
2
1
UPAK
1. Gate
2. Drain
3. Source
4. Drain
S
D
G
2SK1579
2
Absolute Maximum Ratings (Ta = 25C unless otherwise specified.)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
12
V
Gate to source voltage
V
GSS
7
V
Drain current
I
D
2
A
Drain peak current
I
D(pulse)
*
1
4
A
Body to drain diode reverse drain current
I
DR
2
A
Channel power dissipation
Pch*
2
1
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes
1. PW
100
s, duty cycle
10%
2. Value on the almina ceramic board (12.5
20
0.7 mm)
2SK1579
3
Electrical Characteristics (Ta = 25C unless otherwise specified.)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source cutoff current
I
DSS
--
--
1
A
V
DS
= 8 V, V
GS
= 0
Gate to source cutoff current
I
GSS
--
--
5
A
V
GS
=
6.5 V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
0.4
--
1.4
V
V
DS
= 5 V, I
D
= 100
A
Drain to source on resistance
(1)
R
DS(on)
1
--
0.36
0.7
V
GS
= 2.2 V, I
D
= 0.5 A
Drain to source on resistance
(2)
R
DS(on)
2
--
0.25
0.35
V
GS
= 4 V, I
D
= 1 A
DC forward transfer admittance |yfs|
1
2.5
--
S
V
DS
= 5 V, I
D
= 1 A,
V
GS
= 0.1 V
Input capacitance
Ciss
--
110
--
pF
V
DS
= 5 V, V
GS
= 0,
Reverse transfer capacitance
Crss
--
30
--
pF
f = 1 MHz
Output capacitance
Coss
--
150
--
pF
Turn-on time
t
(on)
--
500
--
ns
I
D
= 0.2 A, V
GS
= 0,
Turn-off time
t
(off)
--
1500
--
ns
Vin = 4 V, R
L
= 51
Note
1. Marking is "DY".
2SK1579
4
1.5
1.0
0.5
0
50
100
150
Ambient Temperature Ta (C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
50
10
1
0.05
0.5
10
50
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
20
0.2
0.1 0.2
1
20
Ta = 25C
PW = 10 ms
1 Shot
DC Operation (T
C
= 25C)
5
2
0.5
0.1
2
5
100
Operation in this area
is limited by R
DS (on)
5
4
10
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
4
1
2
6
8
Ta = 25C
Pulse Test
0
2
3
V
GS
= 1.5 V
2.5 V
Drain Current I
D
(A)
4 V
3.5 V
3 V
2 V
5
2
5
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
4
1
1
3
4
0
2
3
V
DS
= 5 V
Pulse Test
25C
Ta
= 25C
75C
2SK1579
5
0.5
2
5
Gate to Source Voltage V
GS
(V)
Drain to Source on State Resistance R
DS (on)
(
)
0.4
0.1
1
3
4
0
0.2
0.3
Drain to Source on State Resistance
vs. Gate to Source Voltage
0.2 A
I
D
= 0.1 A
Ta = 25C
Pulse Test
0.5 A 1 A
5
1
20
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(
)
2
0.1
0.5
2
10
0.2
0.5
1
Static Drain to Source on State
Resistance vs. Drain Current
0.2
0.05
5
4 V
V
GS
= 3 V
Ta = 25C
Pulse Test
2 V
1.0
25
100
Case Temperature T
C
(C)
Static Drain to Source on State Resistance
R
DS (on)
(
)
0.8
0.2
0
50
75
0
0.4
0.6
Static Drain to Source on State
Resistance vs. Temperature
V
GS
= 2 V
Pulse Test
25
0.5 A
I
D
= 1 A
V
GS
= 4 V
I
D
= 0.5 A
1 A
2 A
50
0.5
20
Drain Current I
D
(A)
Forward Transfer Admittance
yfs
(S)
20
2
0.2
1
5
0.05
5
10
Forward Transfer Admittance
vs. Drain Current
V
DS
= 5 V
Pulse Test
1
2
10
75C
25C
Ta = 25C
2SK1579
6
5
2.0
Source to Drain Voltage V
SD
(V)
Reverse Dratin Current I
DR
(A)
4
1.0
0
2
3
0
1
Pulse Test
V
GS
= 0
Reverse Drain Current vs.
Sourse to Drain Voltage
V
GS
= 2 V
500
0.5
10
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
20
0.2
1
5
Typical Capacitance vs.
Drain to Source Voltage
0.1
5
Crss
Coss
Ciss
V
GS
= 0
f = 1 MHz
100
2
10
50
200
5,000
0.2
5
Drain Current I
D
(A)
Switching Time t (ns)
2,000
200
0.1
0.5
2
50
500
1,000
0.05
100
1
Switching Characteristics
t
f
t
d (off)
t
r
V
GS
= 4 V, V
DD
= 10 V
PW = 2
s, Duty cycle = 1%
t
d (on)
4.5
0.1
1.8 Max
1.5
0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5
0.1
4.25 Max
0.8 Min
1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
UPAK
--
Conforms
0.050 g
Unit: mm
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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