2SK2247
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source.
Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
4
3
2
1
UPAK
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK2247
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
2
A
Drain peak current
I
D(pulse)
*
1
4
A
Body to drain diode reverse drain current
I
DR
2
A
Channel dissipation
Pch*
2
1
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes
1. PW
100
s, duty cycle
10 %
2. When using the alumina ceramic board (12.5
20
0.7mm)
3. Marking is "QY"
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
--
--
V
I
D
= 1 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
10
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
5
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
1
A
V
DS
= 24 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
1.5
2.0
V
I
D
= 100
A, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
--
0.3
0.45
I
D
= 1 A
V
GS
= 4 V*
1
--
0.22
0.35
I
D
= 1 A
V
GS
= 10 V*
1
Forward transfer admittance
|y
fs
|
1.5
1.9
--
S
I
D
= 1 A
V
DS
= 10 V*
1
Input capacitance
Ciss
--
177
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
116
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
43
--
pF
f = 1 MHz
Turn-on delay time
t
d(on)
--
8
--
ns
I
D
= 1 A
Rise time
t
r
--
14
--
ns
V
GS
= 10 V
Turn-off delay time
t
d(off)
--
37
--
ns
R
L
= 30
Fall time
t
f
--
33
--
ns
PW = 2
s
Note
1. Pulse Test
2SK2247
3
1.6
1.2
0.8
0.4
0
Channel Dissipation Pch** (W)
(** on the almina ceramic board)
50
100
150
200
Ambient Temperature Ta (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
1 ms
PW = 10 ms (1shot)
Operation in
this area is
limited by R
DS(on)
Ta = 25 C
DC Operation
5
4
3
2
1
0
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
1
2
3
4
5
3 V
3.5 V
Ta = 25 C
Pulse Test
V = 2.5 V
GS
4 V
5.5 V
4.5 V
5 V
5
4
3
2
1
0
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
V = 10 V
Pulse Test
DS
1
2
3
4
5
Ta = 25 C
75 C
25 C
2SK2247
4
0.5
0.4
0.3
0.2
0.1
0
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
4
8
12
16
20
1 A
0.5 A
I = 2 A
D
Pulse Test
Ta = 25 C
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source State Resistance
vs. Drain Current
0.1
0.2
0.5
1
2
5
10
10
2
5
1
0.2
0.5
0.1
10 V
Ta = 25 C
Pulse Test
V = 4 V
GS
1.0
0.8
0.6
0.4
0.2
40
0
40
80
120
160
Case Temperature Tc (C)
0
R ( )
DS(on)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
0.5, 1, 2 A
10 V
V = 4 V
GS
I = 2 A
D
1 A
0.5 A
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
10
2
5
1
0.2
0.5
0.1
0.1
0.2
0.5
1
2
5
10
DS
V = 10 V
Pulse Test
Ta = 25 C
75 C
25 C
2SK2247
5
1000
100
10
1
0
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
10
20
30
40
50
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
0.05
0.1
0.2
0.5
1
2
5
200
100
20
50
10
2
5
V = 10 V, PW = 2 s
V = 30 V, duty < 1 %
GS
DD
t f
r
t
d(on)
t
d(off)
t
5
4
3
2
1
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
10 V
5 V
V = 0
GS
Pulse Test
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