2SK2554
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
100
A
V
DS
= 60 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
--
4.5
6
m
I
D
= 40 A
V
GS
= 10 V*
1
--
5.8
10
m
I
D
= 40 A
V
GS
= 4 V*
1
Forward transfer admittance
|y
fs
|
50
80
--
S
I
D
= 40 A
V
DS
= 10 V*
1
Input capacitance
Ciss
--
7700
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
4100
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
760
--
pF
f = 1 MHz
Turn-on delay time
t
d(on)
--
60
--
ns
I
D
= 40 A
Rise time
t
r
--
420
--
ns
V
GS
= 10 V
Turn-off delay time
t
d(off)
--
1200
--
ns
R
L
= 0.75
Fall time
t
f
--
900
--
ns
Body to drain diode forward
voltage
V
DF
--
0.95
--
V
I
F
= 75 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
105
--
ns
I
F
= 75 A, V
GS
= 0
diF / dt = 50 A /
s
Note:
1. Pulse Test
2SK2554
6
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
0.1
0.3
1
3
10
30
100
500
200
100
20
50
10
5
di / dt = 50 A /
s
V = 0, Ta = 25
C
GS
0
10
20
30
40
50
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
100000
30000
10000
3000
1000
300
100
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
100
80
60
40
20
0
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
20
16
12
8
4
Gate to Source Voltage V (V)
GS
80
160
240
320
400
Dynamic Input Characteristics
0
V = 10 V
25 V
50 V
DD
I = 75 A
D
V
GS
V
DS
V = 50 V
25 V
10 V
DD
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
0.1
0.3
1
3
10
30
100
10000
3000
1000
300
100
30
10
V = 10 V, V = 30 V
PW = 5 s, duty < 1 %
GS
DD
t f
r
t
d(on)
t
d(off)
t
2SK2554
7
200
160
120
80
40
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V (V)
SD
Pulse Test
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
V = 0, 5 V
GS
10 V
5 V
250
200
150
100
50
Channel Temperature Tch (C)
Repetive Avalanche Energy E (mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
25
50
75
100
125
150
0
I = 50 A
V = 25 V
duty < 0.1 %
Rg > 50
AP
DD
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
Pulse Width PW (S)
Normalized Transient Thermal Impedance
100 m
1
10
s (t)
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 0.83 C/W, Tc = 25 C
Tc = 25C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Normalized Transient Thermal Impedance vs. Pulse Width
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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