2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-694I (Z)
10th. Edition
February 1999
Features
Low on-resistance
R
DS(on)
= 6 m
typ.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
TO220AB
1
2
3
1. Gate
2. Drain(Flange)
3. Source
D
G
S
2SK3069
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
75
A
Drain peak current
I
D(pulse)
Note 1
300
A
Body-drain diode reverse drain current
I
DR
75
A
Avalanche current
I
AP
Note 3
50
A
Avalanche energy
E
AR
Note 3
214
mJ
Channel dissipation
Pch
Note 2
100
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1%
2. Value at Tc = 25
C
3. Value at Tch = 25
C, Rg
50
2SK3069
3
Electrical Characteristics (Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
--
--
0.1
A
V
GS
=
20 V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
10
A
V
DS
= 60 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.5
V
I
D
= 1 mA, V
DS
= 10 V
Note 1
Static drain to source on state
R
DS(on)
--
6.0
7.5
m
I
D
= 40 A, V
GS
= 10 V
Note 1
resistance
--
8.0
12
m
I
D
= 40 A, V
GS
= 4 V
Note 1
Forward transfer admittance
|y
fs
|
50
80
--
S
I
D
= 40 A, V
DS
= 10 V
Note 1
Input capacitance
Ciss
--
7100
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
1000
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
280
--
pF
f = 1 MHz
Total gate charge
Qg
--
125
--
nc
V
DD
= 25 V
Gate to source charge
Qgs
--
25
--
nc
V
GS
= 10 V
Gate to drain charge
Qgd
--
25
--
nc
I
D
= 75 A
Turn-on delay time
t
d(on)
--
60
--
ns
V
GS
= 10 V, I
D
= 40 A
Rise time
t
r
--
300
--
ns
R
L
= 0.75
Turn-off delay time
t
d(off)
--
520
--
ns
Fall time
t
f
--
330
--
ns
Bodydrain diode forward voltage
V
DF
--
1.05
--
V
I
F
= 75 A, V
GS
= 0
Bodydrain diode reverse
recovery time
t
rr
--
90
--
ns
I
F
= 75 A, V
GS
= 0
diF/ dt = 50 A/
s
Note:
1. Pulse test
2SK3069
4
Main Characteristics
200
150
100
0
50
100
150
200
0.1
0.3
1
3
10
30
100
100
80
60
40
20
0
2
4
6
8
10
Channel Dissipation Pch (W)
Case Temperature Tc (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25C
10 s
100 s
1 ms
DC Operation
(Tc = 25C)
Operation in
this area is
limited by R
DS(on)
PW = 10 ms (1 shot)
3.5 V
3 V
50
V = 10 V
GS
5 V
4 V
2.5 V
100
80
60
40
20
0
1
2
3
4
5
Tc = 25C
25C
75C
V = 10 V
Pulse Test
DS
Pulse Test
2SK3069
5
0
4
8
12
16
20
20
16
12
8
4
50
0
50
100
150
200
0
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
V = 10 V
GS
4 V
Pulse Test
R (m )
DS(on)
2.0
1.6
1.2
0.8
0.4
Pulse Test
I = 50 A
D
20 A
10 A
1
20
100
2
100
2
5
1
10
200
20
10
V = 4 V
GS
10 V
Pulse Test
10, 20, 50 A
I = 50 A
D
10 A
20 A
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = 25
C
75
C
25
C
V = 10 V
Pulse Test
DS
50
50
5
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