BB501C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-701C (Z)
4th. Edition
Nov. 1998
Features
Build in Biasing Circuit; To reduce using parts cost & PC board space.
High gain;
PG = 21.5 dB typ. at f = 900 MHz
Low noise;
NF = 1.85 dB typ. at f = 900 MHz
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
1. Source
2. Gate1
3. Gate2
4. Drain
1
4
3
2
Notes: 1. Marking is "AS".
2. BB501C is individual type number of HITACHI BBFET.
BB501C
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
6
V
Gate1 to source voltage
V
G1S
+6
0
V
Gate2 to source voltage
V
G2S
+6
0
V
Drain current
I
D
20
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
6
--
--
V
I
D
= 200
A
V
G1S
= V
G2S
= 0
Gate1 to source breakdown
voltage
V
(BR)G1SS
+6
--
--
V
I
G1
= +10
A
V
G2S
= V
DS
= 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
+6
--
--
V
I
G2
= +10
A
V
G1S
= V
DS
= 0
Gate1 to source cutoff current I
G1SS
--
--
+100
nA
V
G1S
= +5V
V
G2S
= V
DS
= 0
Gate2 to source cutoff current I
G2SS
--
--
+100
nA
V
G2S
= +5V
V
G1S
= V
DS
= 0
Gate1 to source cutoff voltage V
G1S(off)
0.5
0.7
1.0
V
V
DS
= 5V, V
G2S
= 4V
I
D
= 100
A
Gate2 to source cutoff voltage V
G2S(off)
0.5
0.7
1.0
V
V
DS
= 5V, V
G1S
= 5V
I
D
= 100
A
Drain current
I
D(op)
7
10
13
mA
V
DS
= 5V, V
G1
= 5V
V
G2S
= 4V, R
G
= 47k
Forward transfer admittance
|y
fs
|
19
24
29
mS
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V
R
G
= 47k
, f = 1kHz
Input capacitance
c
iss
1.4
1.7
2.0
pF
V
DS
= 5V, V
G1
= 5V
Output capacitance
c
oss
0.7
1.1
1.5
pF
V
G2S
=4V, R
G
= 47k
Reverse transfer capacitance c
rss
--
0.019
0.04
pF
f = 1MHz
Power gain
PG
17
21.5
--
dB
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 47k
Noise figure
NF
--
1.85
2.4
dB
f = 900MHz
BB501C
3
Main Characteristics
Gate 1
Source
Drain
Gate 2
R
G
A
I
D
V
G2
V
G1
Output
Input
V = 4 to 0.3 V
AGC
V = 5 V
DS
R
G
V = 5 V
GG
BBFET
RFC
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
D(op)
Application Circuit
BB501C
4
900MHz Power Gain, Noise Test Circuit
Input
Output
C2
C1
L1
L2
L3
L4
S
G1
G2
R1
R2
C3
R3
RFC
C6
C5
C4
D
VG2
VG1
VD
C1, C2
C3
C4C6
R1
R2
R3
Variable Capacitor10pF MAX)
Disk Capacitor1000pF)
Air Capacitor1000pF)
47 k
47 k
4.7 k
26
3
3
L2
18
10
10
L4
29
7
7
L3
1mm Copper wire
Unitmm
RFC1mm Copper wire with enamel 4turns inside dia 6mm
21
10
8
L1
10
BB501C
5
200
150
100
50
0
50
100
150
200
0
1
2
3
4
5
20
16
12
8
4
V = 4 V
V = V
G2S
G1
DS
R = 22 k
G
27 k
20
16
12
8
4
0
1
2
3
4
5
20
16
12
8
4
0
1
2
3
4
5
33 k
39 k
47 k
56 k
68 k
82 k
100 k
2 V
V = 1 V
G2S
V = 5 V
R = 33 k
DS
G
4 V
3 V
V = 1 V
G2S
V = 5 V
R = 47 k
DS
G
3 V
4 V
2 V
Channel Power Dissipation Pch (mW)
Ambient Temperature Ta (C)
Maximum Channel Power
Dissipation Curve
Drain Current I (mA)
D
Typical Output Characteristics
Drain to Source Voltage V (V)
DS
Drain Current vs. Gate1 Voltage
Gate1 Voltage V (V)
G1
Drain Current I (mA)
D
Drain Current vs. Gate1 Voltage
Gate1 Voltage V (V)
G1
Drain Current I (mA)
D
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