ChipFind - документация

Электронный компонент: HAT2024R

Скачать:  PDF   ZIP
HAT2024R
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-494 C (Z)
4th. Edition
July 1997
Features
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Outline
SOP8
1 2
3
4
5
6
7
8
G
D
S
D
G
D
S
D
MOS1
MOS2
1
2
7 8
4
5 6
3
1, 3 S
2, 4 G
5, 6, 7, 8 Dra
HAT2024R
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
5.5
A
Drain peak current
I
D(pulse)
*
1
44
A
Body to drain diode reverse drain
current
I
DR
5.5
A
Channel dissipation
Pch*
2
2
W
Channel dissipation
Pch
*
3
3
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
HAT2024R
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16V, V
DS
= 0
Zero gate voltege drain
current
I
DSS
--
--
10
A
V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
V
DS
= 10V,
I
D
= 1mA
Static drain to source on state R
DS(on)
--
0.05
0.065
I
D
= 3A, V
GS
= 10V*
1
resistance
R
DS(on)
--
0.078
0.11
I
D
= 3A, V
GS
= 4V*
1
Forward transfer admittance
|y
fs
|
3.5
5.5
--
S
I
D
= 3A, V
DS
= 10V*
1
Input capacitance
Ciss
--
310
--
pF
V
DS
= 10V
Output capacitance
Coss
--
220
--
pF
V
GS
= 0
Reverse transfer capacitance Crss
--
100
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
17
--
ns
V
GS
= 4V, I
D
= 3A
Rise time
t
r
--
190
--
ns
V
DD
10V
Turn-off delay time
t
d(off)
--
25
--
ns
Fall time
t
f
--
60
--
ns
Body to drain diode forward
voltage
V
DF
--
0.9
1.4
V
IF = 5.5A, V
GS
= 0*
1
Body to drain diode reverse
recovery time
t
rr
--
50
--
ns
IF = 5.5A, V
GS
= 0
diF/ dt =20A/
s
Note:
1. Pulse test
HAT2024R
4
Main Characteristics
4.0
3.0
2.0
1.0
0
50
100
150
200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
20
16
12
8
4
0
2
4
6
8
10
10V
20
16
12
8
4
0
2
4
6
8
10
10 s
100 s
1 ms
PW = 10 ms
8 V
6 V
4.5 V
4 V
3.5 V
3 V
V = 2.5 V
GS
5 V
Tc = 75C
25C
25C
V = 10 V
Pulse Test
DS
Channel Dissipation Pch (W)
Ambient Temperature Ta (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
2 Drive Operation
1 Drive Operation
Operation in
this area is
limited by R
DS(on)
Pulse Test
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Note5
DC Operation (PW < 10 s)
Ta = 25C
1 shot Pulse
1 Drive Operation
HAT2024R
5
0.5
0.4
0.3
0.2
0.1
0
0.5
0.2
0.05
0.1
0.02
1
0.01
0.2
0.5
1
2
5
10
20
0.20
0.16
0.12
0.08
0.04
40
0
40
80
120
160
0
0.2
0.5
1
2
5
10
20
5
2
0.5
1
0.2
10
0.1
20
25 C
Tc = 25 C
75 C
DS
V = 10 V
Pulse Test
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (C)
R ( )
DS(on)
Static Drain to Source on State Resistance
W
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Drain Current I (A)
D
Pulse Test
Pulse Test
Pulse Test
I = 5 A
D
1 A
2 A
I = 5 A
D
1 A, 2 A, 5 A
V = 4 V
GS
10 V
2 A
1 A
2
4
6
8
10
HAT2024R
6
0.2
0.5
1
2
5
10
0.1
500
200
100
20
50
10
5
0
10
20
30
40
50
1000
200
100
20
10
50
40
30
20
10
0
20
16
12
8
4
2
4
6
8
10
0
di/dt = 20 A/s
V = 0, Ta = 25C
GS
500
50
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
V
GS
V
DS
I = 5.5 A
D
V = 5 V
10 V
20 V
DD
V = 20 V
10 V
5 V
DD
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
20
16
12
8
4
0
0.4
0.8
1.2
1.6
2.0
0, 5 V
V = 5 V
GS
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Souece to Drain Voltage
Pulse Test
HAT2024R
7
Vin Monitor
D.U.T.
Vin
4 V
R
L
V
= 10 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
50 W
90%
10%
t
f
Switching Time Test Circuit
Switching Time Waveform
10
0.2
0.5
1
2
5
10
0.1
500
200
100
20
50
5
V = 4 V, V = 10 V
PW = 3 s, duty < 1 %
GS
DD
t f
r
t
d(off)
t
d(on)
t
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
HAT2024R
8
10
100
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance
s (t)
g
DM
P
PW
T
D =
PW
T
ch f(t) = s (t) ch f
ch f = 125 C/W, Ta = 25 C
q
g q
q
When using the glass epoxy board
(FR4 40x40x1.6 mm)
10
100
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance
s (t)
g
DM
P
PW
T
D =
PW
T
ch f(t) = s (t) ch f
ch f = 166 C/W, Ta = 25 C
q
g q
q
When using the glass epoxy board
(FR4 40x40x1.6 mm)
HAT2024R
9
Package Dimensions
Unit: mm
1.75 Max
4.0 Max
M
8
5
1
4
5.0 Max
6.2 Max
1.27
0.15
Hitachi code
EIAJ
JEDEC
FP
8DA
--
MS-012AA
0.25 Max
0.25 Max
1.27 Max
0.51 Max
0.25
0 8
HAT2024R
10
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
2000 Sierra Point Parkway
Brisbane, CA 94005-1897
Tel: <1> (800) 285-1601
Fax: <1> (303) 297-0447
For further information write to: