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Электронный компонент: PF0210

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PF0210
MOS FET Power Amplifier Module for ADC Mobile Phone
ADE-208-102E (Z)
Preliminary
6th Edition
July 1996
Features
High efficiency: 34% Typ for CW
30% Typ for
/4-DQPSK
Low input power: 0 dBm ave. Typ for
/4-DQPSK
Simple bias circuit
High speed switching: 8
s Typ
Pin Arrangement
1
2
3
4
5
5
1: Pin
2: V
APC
3: V
DD
4: Pout
5: GND
RF-B2
PF0210
2
Internal Diagram and External Circuit
G
GND
G
GND
Pin1
Pin
Pin2
V
APC
Pin3
V
DD
Pin4
Pout
Pout
V
DD
V
APC
Pin
Z1
C1
C3
C2
Z2
FB1
FB2
C1 = C2 = 0.01
F (Ceramic chip capacitor)
C3 = 330
F (Aluminum Electrolyte Capacitor)
FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent
Z1 = Z2 = 50
(Microstrip line)
Absolute Maximum Ratings (Tc = 25C)
Item
Symbol
Rating
Unit
Supply voltage
V
DD
17
V
Supply current
I
DD
4
A
V
APC
voltage
V
APC
5.5
V
Input power
Pin
20
mW
Operating case temperature
Tc (op)
30 to +100
C
Storage temperature
Tstg
40 to +110
C
PF0210
3
Electrical Characteristics (Tc = 25C)
Analog Transmission
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency
f
824
--
849
MHz
--
Drain cutoff current
I
DS
--
--
500
A
V
DD
= 17 V, V
APC
= 0 V
Total efficiency(1)
T
(1)
30
34
--
%
Pin =
3 dBm, V
DD
= 12.5 V,
2nd harmonic distortion
2nd H.D.
--
55
30
dBc
Pout = 6 W (V
APC
controlled),
3rd harmonic distortion
3rd H.D.
--
60
40
dBc
Input VSWR
VSWR (in) --
2
3
--
Output power
Pout
6
9
--
W
Pin =
3 dBm, V
DD
= 12.5 V,
V
APC
= 4 V
Isolation
--
--
45
40
dBm
Pin =
3dBm, V
DD
= 12.5 V,
V
APC
= 0.5 V
Stability
--
No parasitic oscillation
--
Pin =
3 dBm, V
DD
= 12.5 V,
Pout
6 W,
Output VSWR = 20:1 All phases
Digital Transmission
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency
f
824
--
849
MHz
--
Total efficiency(2)
T
(2)
25
30
--
%
Pin controlled (
/4-DQPSK,
=
Adjacent channel
P
ADJ
(30k)
--
30
28
dBc
0.35, 48.6 kbps),
leakage power
P
ADJ
(60k)
--
50
46
dBc
BW =24.3 kHz with Root Nyquist
Input power
Pin
--
--
5
dBm ave. Filter,
Pout = 5.5 W ave., V
DD
= 12.5 V
V
APC
= 3.9 V
Mechanical Characteristics
Item
Conditions
Spec
Torque for screw up the heatsink flange
M3 Screw Bolts
4 to 6 kgcm
Warp size of the heatsink flange: S
S
S = 0
+0.3/ 0 mm
PF0210
4
Characteristics Curve
5
2
1
0
60
50
40
30
20
10
T
824
829
839
849
4
3
V
APC
834
844
Pin = 2 mW
V
DD
= 12.5 V
Pout = 6 W
Efficiency
T
(%)
Apc Voltage V
APC
(V)
V.S.W.R. (in)
Frequency f (MHz)
V
APC
,
T
, VSWR (in) vs. Frequency
6
3
2
1
5
4
0
V
SWRin
20
8
4
0
60
50
40
30
20
10
T
824
829
839
849
16
12
V
SWRin
834
844
Pin = 2 mW
V
DD
= 12.5 V
V
APC
= 3.9 V
Efficiency
T
(%)
Output Power Pout (W)
V.S.W.R. (in)
Frequency f (MHz)
Pout,
T
, VSWR (in) vs. Frequency
6
3
2
1
5
4
0
Pout
PF0210
5
824
829
839
849
Frequency f (MHz)
834
844
Pin = 2 mW
V
DD
= 12.5 V
Pout = 6 W
3rd H.D (dB)
2nd H.D (dB)
2nd H.D
3rd H.D
-
20
-
30
-
40
-
50
-
60
-
70
-
20
-
30
-
40
-
50
-
60
-
70
2nd H.D, 3rd H.D vs. Frequency (1)
824
829
839
849
Frequency f (MHz)
834
844
Pin = 2 mW
V
DD
= 12.5 V
V
APC
= 3.9 V
3rd H.D (dB)
2nd H.D (dB)
2nd H.D
3rd H.D
-
20
-
30
-
40
-
50
-
60
-
70
-
20
-
30
-
40
-
50
-
60
-
70
2nd H.D, 3rd H.D vs. Frequency (2)
PF0210
6
Efficiency
T
(%)
824
829
839
849
Frequency f (MHz)
834
844
Pin = 2 mW
V
DD
= 12.5 V
V
APC
= 3.9 V
20
8
4
0
60
50
40
30
20
0
16
12
Pout
T
Output Power Pout (W)
Pout,
T
vs. Frequency (1)
10
Efficiency
T
(%)
824
838
866
894
Frequency f (MHz)
852
880
Pin = 2 mW
V
DD
= 12.5 V
V
APC
= 3.9 V
20
8
4
0
60
50
40
30
20
0
16
12
Pout
T
Output Power Pout (W)
Pout,
T
vs. Frequency (2)
10
Tx
Rx
PF0210
7
5
2
1
0
60
50
40
30
20
10
T
10.5
11.5
14.5
16.5
4
3
V
APC
V
SWRin
12.5
15.5
f = 824 MHz
Pin = 2 mW
Pout = 6 W
Efficiency
T
(%)
Apc Voltage V
APC
(V)
V.S.W.R. (in)
Supply Voltage V
DD
(V)
V
APC
,
T
, VSWR (in) vs. V
DD
(1)
0
6
3
2
1
5
4
13.5
5
2
1
0
60
50
40
30
20
10
T
10.5
11.5
14.5
16.5
4
3
V
APC
V
SWRin
12.5
15.5
f = 849 MHz
Pin = 2 mW
Pout = 6 W
Efficiency
T
(%)
Apc Voltage V
APC
(V)
V.S.W.R. (in)
Supply Voltage V
DD
(V)
V
APC
,
T
, VSWR (in) vs. V
DD
(2)
0
6
3
2
1
5
4
13.5
PF0210
8
10.5
11.5
14.5
16.5
Supply Voltage V
DD
(V)
12.5
15.5
f = 824 MHz
Pin = 2 mW
Pout = 6 W
3rd H.D (dB)
2nd H.D (dB)
2nd H.D
3rd H.D
-
20
-
30
-
40
-
50
-
60
-
70
-
20
-
30
-
40
-
50
-
60
-
70
2nd H.D, 3rd H.D vs. V
DD
(1)
13.5
10.5
11.5
14.5
16.5
Supply Voltage V
DD
(V)
12.5
15.5
f = 849 MHz
Pin = 2 mW
Pout = 6 W
3rd H.D (dB)
2nd H.D (dB)
2nd H.D
3rd H.D
-
20
-
30
-
40
-
50
-
60
-
70
-
20
-
30
-
40
-
50
-
60
-
70
2nd H.D, 3rd H.D vs. V
DD
(2)
13.5
PF0210
9
25
10
5
0
60
50
40
30
20
10
T
2
2.5
4
5
20
15
Pout
3
4.5
f = 824 MHz
Pin = 2 mW
V
DD
= 12.5 V
0
3.5
Output Power Pout (W)
Apc Voltage V
APC
(V)
Efficiency
T
(%)
Pout,
T
vs. V
APC
(1)
25
10
5
0
60
50
40
30
20
10
T
2
2.5
4
5
20
15
Pout
3
4.5
f = 849 MHz
Pin = 2 mW
V
DD
= 12.5 V
0
3.5
Output Power Pout (W)
Apc Voltage V
APC
(V)
Efficiency
T
(%)
Pout,
T
vs. V
APC
(2)
PF0210
10
15
6
3
0
60
50
40
30
20
10
T
0
0.2
0.6
1.0
12
9
Pout
V
SWRin
0.4
0.8
f = 824 MHz
V
DD
= 12.5 V
V
APC
= 3.9 V
Efficiency
T
(%)
Output Power Pout (W)
V.S.W.R. (in)
Input Power Pin (mW)
Pout,
T
, VSWR (in) vs. Pin (1)
6
3
2
1
5
4
0
15
6
3
0
60
50
40
30
20
10
T
0
0.2
0.6
1.0
12
9
Pout
0.4
0.8
f = 849 MHz
V
DD
= 12.5 V
V
APC
= 3.9 V
Efficiency
T
(%)
Output Power Pout (W)
V.S.W.R. (in)
Input Power Pin (mW)
Pout,
T
, VSWR (in) vs. Pin (2)
6
3
2
1
5
4
0
V
SWRin
PF0210
11
Package Dimensions
60.5
0.5
57.5
0.5
0.5
12.7
0.5
11.0
0.3
5.0
+ 0.6
0.3
2.3
49.8
0.5
13.0
1
0.25
22.0
1
8.0
1
9.2
1
3.3
5
1
6.35
0.5
R1.6
2
1
3
4
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
RF-B2
--
--
16 g
Unit: mm
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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