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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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AMPLIFIERS - SMT
8
HMC327MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
v02.1202
General Description
Features
Functional Diagram
The HMC327MS8G is a high effi ciency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifi er which operates between
3.0 and 4.0 GHz. The amplifi er is packaged in a
low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external com-
ponents, the amplifi er provides 21 dB of gain,
+30 dBm of saturated power at 45% PAE from
a +5.0V supply voltage. Power down capability is
available to conserve current consumption when
the amplifi er is not in use.
Gain: 21 dB
Saturated Power: +30 dBm
45% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count
Electrical Specifi cations,
T
A
= +25 C, Vs = 5V, Vctl = 5V
Typical Applications
This amplifi er is ideal for use as a power
amplifi er for 3.3 - 3.6 GHz applications:
Wireless Local Loop
Parameter
Min.
Typ.
Max.
Units
Frequency Range
3.0 - 4.0
GHz
Gain
17
21
24
dB
Gain Variation Over Temperature
0.025
0.035
dB / C
Input Return Loss
15
dB
Output Return Loss
8
dB
Output Power for 1dB Compression (P1dB)
24
27
dBm
Saturated Output Power (Psat)
30
dBm
Output Third Order Intercept (IP3)
36
40
dBm
Noise Figure
5.0
dB
Supply Current (Icq)
Vpd = 0V/5V
0.002 / 250
mA
Control Current (Ipd)
Vpd = 5V
7
mA
Switching Speed
tON, tOFF
40
ns
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AMPLIFIERS - SMT
8
-25
-20
-15
-10
-5
0
5
10
15
20
25
2
2.5
3
3.5
4
4.5
5
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
2.5
3
3.5
4
4.5
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
2.5
3
3.5
4
4.5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-15
-10
-5
0
2.5
3
3.5
4
4.5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC327MS8G
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
14
16
18
20
22
24
26
28
30
32
34
2.5
3
3.5
4
4.5
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
32
34
2.5
3
3.5
4
4.5
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
v02.1202
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AMPLIFIERS - SMT
8
0
6
12
18
24
30
36
42
48
-5
-3
-1
1
3
5
7
9
11
13
15
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
2.5
3
3.5
4
4.5
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
Power Compression @ 3.5 GHz
Output IP3 vs. Temperature
HMC327MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
0
1
2
3
4
5
6
7
8
9
10
3
3.5
4
4.5
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage
18
19
20
21
22
23
24
25
26
27
28
22
23
24
25
26
27
28
29
30
31
32
4.75
5
5.25
Gain
P1dB
Psat
GAIN dB)
P1dB, Psat (dBm)
Vcc SUPPLY VOLTAGE (Vdc)
-60
-50
-40
-30
-20
-10
0
2.5
3
3.5
4
4.5
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
2.5
3
3.5
4
4.5
ISOLATION (dB)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Power Down Isolation
v02.1202
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AMPLIFIERS - SMT
8
HMC327MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Outline Drawing
Absolute Maximum Ratings
v02.1202
Gain, Power & Quiescent Supply
Current vs. Vpd @ 3.5 GHz
5
10
15
20
25
30
0
50
100
150
200
250
2.5
3
3.5
4
4.5
5
P1dB
Psat
Gain
Icq
GAIN (dB), P1dB (dBm), Psat (dBm)
Icq (mA)
Vpd (Vdc)
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Collector Bias Voltage (Vcc)
+5.5 Vdc
Control Voltage (Vpd)
+5.5 Vdc
RF Input Power (RFin)(Vs = Vctl = +5.0 Vdc)
+20 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 29 mW/C above 85 C)
1.88 W
Thermal Resistance
(junction to ground paddle)
34 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
Pin Number
Function
Description
Interface Schematic
1
Vpd
Power Control Pin. For maximum power, this pin hsould be connected to
5.0V. A higher voltage is not recommended. For lower idle current, this
voltage can be reduced.
2, 4, 7
GND
Ground: Backside of package has exposed metal ground slug that must
be connected to ground thru a short path. Vias under the device are
required.
3
RF IN
This pin is AC coupled and matched to 50 Ohms from 3.0 to 4.0 GHz.
5, 6
RF OUT
RF output and bias for the output stage. The power supply for the output
device needs to be supplied to these pins.
8
Vcc
Power supply voltage for the fi rst amplifi er stage. An external bypass
capacitor of 330 pF is required. This capacitor should be placed as close
to the device as possible.
HMC327MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Pin Descriptions
v02.1202
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