BSC032N03S
Opti
MOS
2 Power-Transistor
Features
Fast switching MOSFET for SMPS
Optimized technology for notebook DC/DC converters
Qualified according to JEDEC
1
for target applications
N-channel
Logic level
Excellent gate charge x R
DS(on)
product (FOM)
Very low on-resistance R
DS(on)
Superior thermal resistance
Avalanche rated
dv /dt rated
Maximum ratings, at T
j
=25 C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 C
50
A
T
C
=100 C
50
T
A
=25 C,
R
thJA
=45 K/W
2)
23
Pulsed drain current
I
D,pulse
T
C
=25 C
3)
200
Avalanche energy, single pulse
E
AS
I
D
=50 A, R
GS
=25
550
mJ
Reverse diode dv /dt
dv /dt
I
D
=50 A, V
DS
=24 V,
di /dt =200 A/s,
T
j,max
=150 C
6
kV/s
Gate source voltage
V
GS
20
V
Power dissipation
P
tot
T
C
=25 C
78
W
T
A
=25 C,
R
thJA
=45 K/W
2)
2.8
Operating and storage temperature
T
j
, T
stg
-55 ... 150
C
IEC climatic category; DIN IEC 68-1
55/150/56
Value
V
DS
30
V
R
DS(on),max
3.2
m
I
D
50
A
Product Summary
Type
Package
Ordering Code
Marking
BSC032N03S
P-TDSON-8
Q67042-S4219
32N03S
P-TDSON-8
Rev. 1.2
page 1
2004-04-13
BSC032N03S
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.6
K/W
Thermal resistance,
R
thJA
minimal footprint
-
-
62
junction - ambient
6 cm
2
cooling area
2)
-
-
45
Electrical characteristics, at T
j
=25 C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
30
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=70 A
1.2
1.6
2
Zero gate voltage drain current
I
DSS
V
DS
=30 V, V
GS
=0 V,
T
j
=25 C
-
0.1
1
A
V
DS
=30 V, V
GS
=0 V,
T
j
=125 C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
-
10
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V, I
D
=50 A
-
3.9
4.9
m
V
GS
=10 V, I
D
=50 A
-
2.7
3.2
Gate resistance
R
G
-
0.6
-
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
57
113
-
S
3)
See figure 3
1)
J-STD20 and JESD22
Values
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.2
page 2
2004-04-13
BSC032N03S
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
3820
5080
pF
Output capacitance
C
oss
-
1360
1810
Reverse transfer capacitance
C
rss
-
173
260
Turn-on delay time
t
d(on)
-
7.5
11
ns
Rise time
t
r
-
7.0
11
Turn-off delay time
t
d(off)
-
32
48
Fall time
t
f
-
5.4
8
Gate Charge Characteristics
4)
Gate to source charge
Q
gs
-
11
15
nC
Gate charge at threshold
Q
g(th)
-
6.1
8.1
Gate to drain charge
Q
gd
-
7.2
11
Switching charge
Q
sw
-
12
18
Gate charge total
Q
g
-
29
39
Gate plateau voltage
V
plateau
-
2.9
-
V
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 5 V
-
26
34
nC
Output charge
Q
oss
V
DD
=15 V, V
GS
=0 V
-
32
43
Reverse Diode
Diode continous forward current
I
S
-
-
50
A
Diode pulse current
I
S,pulse
-
-
200
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=50 A,
T
j
=25 C
-
0.84
1
V
Reverse recovery charge
Q
rr
V
R
=15 V, I
F
=I
S
,
di
F
/dt =400 A/s
-
-
15
nC
4)
See figure 16 for gate charge parameter definition
T
C
=25 C
Values
V
GS
=0 V, V
DS
=15 V,
f =1 MHz
V
DD
=15 V, V
GS
=10 V,
I
D
=25 A, R
G
=2.7
V
DD
=15 V, I
D
=25 A,
V
GS
=0 to 5 V
Rev. 1.2
page 3
2004-04-13
BSC032N03S
1 Power dissipation
2 Drain current
P
tot
=f(T
C
)
I
D
=f(T
C
); V
GS
10 V
3 Safe operation area
4 Max. transient thermal impedance
I
D
=f(V
DS
); T
C
=25 C; D =0
Z
thJC
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
1 s
10 s
100 s
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
10
3
10
2
10
1
10
0
1
10
100
1000
0.1
1
10
100
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
1
10
0
10
-1
10
-2
10
-3
0.001
0.01
0.1
1
10
0
0
0
0
0
0
t
p
[s]
Z
thJC
[K/W]
0
10
20
30
40
50
60
70
80
90
0
40
80
120
160
T
C
[C]
P
tot
[W]
0
20
40
60
0
40
80
120
160
T
C
[C]
I
D
[A]
Rev. 1.2
page 4
2004-04-13
BSC032N03S
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 C
R
DS(on)
=f(I
D
); T
j
=25 C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 C
parameter: T
j
2.8 V
3 V
3.2 V
3.4 V
3.7 V
4 V
4.5 V
10 V
0
4
8
12
16
20
0
20
40
60
80
100
I
D
[A]
R
D
S
(on)
[m
]
25 C
150 C
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
V
GS
[V]
I
D
[A]
0
20
40
60
80
100
120
140
0
10
20
30
40
50
60
I
D
[A]
g
fs
[S]
2.8 V
3 V
3.2 V
3.4 V
3.7 V
4 V
4.5 V
10 V
0
20
40
60
80
100
120
140
160
0
1
2
3
V
DS
[V]
I
D
[A]
Rev. 1.2
page 5
2004-04-13
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