BSP171P
SIPMOS
Small-Signal-Transistor
Features
P-Channel
Enhancement mode
Logic level
Avalanche rated
dv /dt rated
Maximum ratings, at T
j
=25 C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
A
=25 C
1)
A
T
A
=70 C
1)
Pulsed drain current
I
D,pulse
T
A
=25 C
Avalanche energy, single pulse
E
AS
I
D
=-1.9 A, R
GS
=25
mJ
Reverse diode dv /dt
dv /dt
I
D
=-1.9 A,
V
DS
=-48 V,
di /dt =-200 A/s,
T
j,max
=150 C
kV/s
Gate source voltage
V
GS
V
Power dissipation
P
tot
T
A
=25 C
1)
W
Operating and storage temperature
T
j
, T
stg
C
IEC climatic category; DIN IEC 68-1
55/150/56
-55 ... 150
20
-6
-1.9
-1.5
1.8
Value
70
-7.6
steady state
V
DS
-60
V
R
DS(on),max
0.3
I
D
-1.9
A
Product Summary
Type
Package
Ordering Code
Marking
BSP 171 P
SOT-223
Q67041-S4019
171P
SOT-223
Rev. 2.0
page 1
2004-01-20
BSP171P
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance,
junction - soldering point
R
thJS
-
-
25
K/W
Thermal resistance,
junction - ambient
R
thJA
minimal footprint,
steady state
-
-
110
6 cm
2
cooling area
1)
,
steady state
-
-
70
Electrical characteristics, at T
j
=25 C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=-250 A
-60
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
,
I
D
=-460 A
-1
-1.5
-2
Zero gate voltage drain current
I
DSS
V
DS
=-60 V, V
GS
=0 V,
T
j
=25 C
-
-0.1
-1
A
V
DS
=-60 V, V
GS
=0 V,
T
j
=125 C
-
-10
-100
Gate-source leakage current
I
GSS
V
GS
=-20 V, V
DS
=0 V
-
-10
-100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=-4.5 V,
I
D
=-1.5 A
-
0.3
0.45
V
GS
=-10 V,
I
D
=-1.9 A
-
0.21
0.3
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-1.5 A
1.4
2.7
-
S
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
Values
Rev. 2.0
page 2
2004-01-20
BSP171P
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
365
460
pF
Output capacitance
C
oss
-
105
135
Reverse transfer capacitance
C
rss
-
40
55
Turn-on delay time
t
d(on)
-
6
8
ns
Rise time
t
r
-
25
33
Turn-off delay time
t
d(off)
-
208
276
Fall time
t
f
-
87
130
Gate Charge Characteristics
2)
Gate to source charge
Q
gs
-
-1.2
-1.6
nC
Gate to drain charge
Q
gd
-
-5
-7
Gate charge total
Q
g
-
-13
-20
Gate plateau voltage
V
plateau
-
-3
-
V
Output charge
Q
oss
V
DD
=-15 V, V
GS
=0 V
-
-5
-7
Reverse Diode
Diode continuous forward current
I
S
-
-
-1.9
A
Diode pulse current
I
S,pulse
-
-
-7.6
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=1.9 A,
T
j
=25 C
-
-0.84
-1.1
V
Reverse recovery time
t
rr
-
80
120
ns
Reverse recovery charge
Q
rr
-
-125
-190
nC
2)
See figure 16 for gate charge parameter definition
T
A
=25 C
Values
V
GS
=0 V,
V
DS
=-25 V, f =1 MHz
V
DD
=-25 V,
V
GS
=-10 V,
I
D
=-1.9 A, R
G
=6
V
DD
=-48 V, I
D
=1.9 A,
V
GS
=0 to -10 V
V
R
=-30 V, I
F
=|I
S
|,
di
F
/dt =100 A/s
Rev. 2.0
page 3
2004-01-20
BSP171P
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 C
R
DS(on)
=f(I
D
); T
j
=25 C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 C
parameter: T
j
-3 V
-3.5 V
-4 V
-4.5 V
-5 V
-5.5 V
-10 V
0
100
200
300
400
500
600
0
1
2
3
4
-I
D
[A]
R
D
S
(on)
[m
]
25 C
125 C
0
1
2
3
4
5
6
0
1
2
3
4
5
-V
GS
[V]
-I
D
[A]
0
1
2
3
4
5
0
1
2
3
4
-I
D
[A]
g
fs
[S]
-2.5 V
-3 V
-3.5 V
-4 V
-4.5 V
-5 V
-5.5 V
-10 V
0
1
2
3
4
5
0
1
2
3
4
5
-V
DS
[V]
-I
D
[A]
Rev. 2.0
page 5
2004-01-20
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