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Электронный компонент: BSP297

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2002-11-04
Page 1
BSP297
Rev. 1.0
SIPMOS
Small-Signal-Transistor
Product Summary
V
DS
200
V
R
DS(on)
1.8
W
I
D
0.66
A
Feature
 N-Channel
Enhancement mode
Logic Level
dv/dt rated
SOT-223
VPS05163
1
2
3
4
Marking
BSP297
Type
Package
Ordering Code
Tape and Reel Information
BSP297
SOT-223
Q67000-S068
E6327: 3000 pcs/reel
Maximum Ratings, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25C
T
A
=70C
I
D
0.66
0.53
A
Pulsed drain current
T
A
=25C
I
D puls
2.64
Reverse diode dv/dt
I
S
=0.66A, V
DS
=160V, di/dt=200A/s, T
jmax
=150C
dv/dt
6
kV/s
Gate source voltage
V
GS
20
V
ESD Sensitivity (HBM) as per MIL-STD 883
Class 1
Power dissipation
T
A
=25C
P
tot
1.8
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
IEC climatic category; DIN IEC 68-1
55/150/56
2002-11-04
Page 2
BSP297
Rev. 1.0
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
R
thJS
-
15
25
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
80
48
115
70
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=250A
V
(BR)DSS
200
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=400A
V
GS(th)
0.8
1.4
1.8
Zero gate voltage drain current
V
DS
=200V, V
GS
=0, T
j
=25C
V
DS
=200V, V
GS
=0, T
j
=150C
I
DSS
-
-
-
10
0.1
100
A
Gate-source leakage current
V
GS
=20V, V
DS
=0
I
GSS
-
1
10
nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=0.53A
R
DS(on)
-
1.2
3
W
Drain-source on-state resistance
V
GS
=10V, I
D
=0.66A
R
DS(on)
-
1
1.8
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2002-11-04
Page 3
BSP297
Rev. 1.0
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=0.53A
0.47
0.94
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=25V,
f=1MHz
-
286
357
pF
Output capacitance
C
oss
-
38
47
Reverse transfer capacitance
C
rss
-
15.7
23.5
Turn-on delay time
t
d(on)
V
DD
=100V, V
GS
=4.5V,
I
D
=0.6A, R
G
=15
W
-
5.2
7.8
ns
Rise time
t
r
-
3.8
5.7
Turn-off delay time
t
d(off)
-
49
74
Fall time
t
f
-
19
29
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=160V, I
D
=0.66A
-
0.7
0.9
nC
Gate to drain charge
Q
gd
-
5.2
7.8
Gate charge total
Q
g
V
DD
=160V, I
D
=0.66A,
V
GS
=0 to 10V
-
12.9
16.1
Gate plateau voltage
V
(plateau) V
DD
=160V, I
D
= 0.66 A
-
2.7
3.3
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25C
-
-
0.66 A
Inv. diode direct current, pulsed I
SM
-
-
2.64
Inverse diode forward voltage V
SD
V
GS
=0, I
F
= I
S
-
0.84
1.2
V
Reverse recovery time
t
rr
V
R
=100V, I
F=
l
S
,
di
F
/dt=100A/s
-
52
78
ns
Reverse recovery charge
Q
rr
-
80
120
nC
2002-11-04
Page 4
BSP297
Rev. 1.0
1 Power dissipation
P
tot
= f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9
BSP297
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: V
GS
10 V
0
20
40
60
80
100
120
C
160
T
A
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
A
0.75
BSP297
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 C
10
0
10
1
10
2
10
3
V
V
DS
-3
10
-2
10
-1
10
0
10
1
10
A
BSP297
I
D
R
DS
(o
n)
=
V
DS
/
I
D
DC
10 ms
1 ms
tp = 100.0s
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP297
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2002-11-04
Page 5
BSP297
Rev. 1.0
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: T
j
= 25 C, V
GS
0
0.4
0.8
1.2
1.6
V
2.2
V
DS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
A
1.3
I
D
2.8V
2.6V
3.4V
3.8V
4V
4.6V
5V
6V
10V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: T
j
= 25 C, V
GS
0
0.2
0.4
0.6
0.8
1
A
1.3
I
D
0
0.5
1
1.5
2
2.5
3
3.5
W
4.5
R
DS(on)
2.6V
2.8V
3.4V
3.8V
4V
4.6V
5V
6V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: T
j
= 25 C
0
0.5
1
1.5
2
2.5
V
3.5
V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
A
1.3
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
= 25 C
0
0.2
0.4
0.6
0.8
1
A
1.3
I
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
S
1.4
g
fs
2002-11-04
Page 6
BSP297
Rev. 1.0
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 0.66 A, V
GS
= 10 V
-60
-20
20
60
100
C
180
T
j
0
1
2
3
4
5
6
7
W
8.5
BSP297
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (Tj)
parameter: V
GS
= V
DS;
I
D
=400A
-60
-20
20
60
100
C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
2.2
V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz, T
j
= 25 C
0
5
10
15
20
V
30
V
DS
1
10
2
10
3
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: Tj
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-2
10
-1
10
0
10
1
10
A
BSP297
I
F
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
2002-11-04
Page 7
BSP297
Rev. 1.0
13 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 0.66 A pulsed, T
j
= 25 C
0
2
4
6
8
10
12
14
16 nC
20
Q
G
0
2
4
6
8
10
12
V
16
BSP297
V
GS
0.2 V
DS max
0.5 V
DS max
0.8 V
DS max
14 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60
-20
20
60
100
C
180
T
j
180
185
190
195
200
205
210
215
220
225
230
235
V
245
BSP297
V
(BR)DSS
2002-11-04
Page 8
BSP297
Rev. 1.0
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.

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regarding circuits, descriptions and charts stated herein.

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