2002-09-04
Page 1
Final data
BSS 84 P
SIPMOS
Small-Signal-Transistor
Product Summary
V
DS
-60
V
R
DS(on)
8
W
I
D
-0.17
A
Feature
P-Channel
Enhancement mode
Logic Level
Avalanche rated
dv/dt rated
SOT-23
1
2
3
VPS05161
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
YBs
Type
Package
Ordering Code
BSS 84 P
SOT-23
Q67041-S1417
Maximum Ratings, at
TA
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25C
T
A
=70C
I
D
-0.17
-0.14
A
Pulsed drain current
T
A
=25C
I
D puls
-0.68
Avalanche energy, single pulse
I
D
=-0.17 A , V
DD
=-25V, R
GS
=25
W
E
AS
2.6
mJ
Avalanche energy, periodic limited by T
jmax
E
AR
0.036
Reverse diode dv/dt
I
S
=-0.17A, V
DS
=-48V, di/dt=-200A/s, T
jmax
=150C
dv/dt
-6
kV/s
Gate source voltage
V
GS
20
V
Power dissipation
T
A
=25C
P
tot
0.36
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
IEC climatic category; DIN IEC 68-1
55/150/56
2002-09-04
Page 2
Final data
BSS 84 P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
R
thJS
-
-
200
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
350
300
Electrical Characteristics, at
TA
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=-250A
V
(BR)DSS
-60
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=-20A
V
GS(th)
-1
-1.5
-2
Zero gate voltage drain current
V
DS
=-60V, V
GS
=0,
TA
=25C
V
DS
=-60V, V
GS
=0,
TA
=125C
I
DSS
-
-
-0.1
-10
-1
-100
A
Gate-source leakage current
V
GS
=-20V, V
DS
=0
I
GSS
-
-10
-100
nA
Drain-source on-state resistance
V
GS
=-4.5V, I
D
=-0.14A
R
DS(on)
-
8
12
W
Drain-source on-state resistance
V
GS
=-10V, I
D
=-0.17A
R
DS(on)
-
5.8
8
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2002-09-04
Page 3
Final data
BSS 84 P
Electrical Characteristics, at
TA
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=-0.14A
0.065
0.13
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=-25V,
f=1MHz
-
15
19
pF
Output capacitance
C
oss
-
6
8
Reverse transfer capacitance
C
rss
-
2
3
Turn-on delay time
t
d(on)
V
DD
=-30V, V
GS
=-4.5V,
I
D
=-0.14A, R
G
=25
W
-
6.7
10
ns
Rise time
t
r
-
16.2
24.3
Turn-off delay time
t
d(off)
-
8.6
12.9
Fall time
t
f
-
20.5
30.8
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=-48V, I
D
=-0.17A
-
0.25
0.37
nC
Gate to drain charge
Q
gd
-
0.3
0.45
Gate charge total
Q
g
V
DD
=-48V, I
D
=-0.17A,
V
GS
=0 to -10V
-
1
1.5
Gate plateau voltage
V
(plateau) V
DD
=-48V, I
D
=-0.17A
-
-3.42
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25C
-
-
-0.17
A
Inv. diode direct current, pulsed I
SM
-
-
-0.68
Inverse diode forward voltage
V
SD
V
GS
=0, I
F
=-0.17A
-
-0.93
-1.24
V
Reverse recovery time
t
rr
V
R
=-30V, I
F=
l
S
,
di
F
/dt=100A/s
-
23
34
ns
Reverse recovery charge
Q
rr
-
10
15
nC
2002-09-04
Page 4
Final data
BSS 84 P
1 Power dissipation
P
tot
= f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
W
0.38
BSS 84 P
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: V
GS
10 V
0
20
40
60
80
100
120
C
160
T
A
0
-0.02
-0.04
-0.06
-0.08
-0.1
-0.12
-0.14
A
-0.18
BSS 84 P
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-3
-10
-2
-10
-1
-10
0
-10
1
-10
A
BSS 84 P
I
D
R
D
S(
on
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
tp = 170.0s
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
BSS 84 P
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2002-09-04
Page 5
Final data
BSS 84 P
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: T
j
= 25 C
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
V
-5
V
DS
0
-0.04
-0.08
-0.12
-0.16
-0.2
-0.24
-0.28
-0.32
A
-0.4
BSS 84 P
I
D
V
GS
[V]
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-5.5
h
h
-6.0
i
i
-6.5
j
j
-7.0
k
k
-8.0
l
P
tot
= 0.36W
l
-10.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
; Tj = 25 C
0
-0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32
A
-0.38
I
D
0
2
4
6
8
10
12
14
16
18
20
22
W
26
BSS 84 P
R
DS(on)
V
GS
[V] =
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-5.5
h
h
-6.0
i
i
-6.5
j
j
-7.0
k
k
-8.0
l
l
-10.0
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS|
2 x |I
D|
x R
DS(on)max
parameter: Tj = 25 C
0
1
2
3
4
V
6
- V
GS
0
0.05
0.1
0.15
0.2
0.25
0.3
A
0.4
-
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: Tj = 25 C
0
0.04
0.08
0.12
0.16
A
0.22
-I
D
0
0.02
0.04
0.06
0.08
0.1
0.12
S
0.16
g
fs
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