2004-03-05
Page 1
HITFET
II.Generation BTS 118 D
Smart Lowside Power Switch
Product Summary
Drain source voltage
V
DS
42
V
On-state resistance
R
DS(on)
100
m
W
Nominal load current
I
D(Nom)
2.4
A
Clamping energy
E
AS
2
J
Features
Logic Level Input
Input Protection (ESD)
Thermal shutdown with
auto restart
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Analog driving possible
P-TO252-3-11
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
C compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
V
bb
In
Source
Drain
HITFET
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Complete product spectrum and additional information http://www.infineon.com/hitfet
2004-03-05
Page 2
BTS 118 D
Maximum Ratings at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Drain source voltage
V
DS
42
V
Supply voltage for full short circuit protection
V
bb(SC)
42
Continuous input voltage
1)
V
IN
-0.2
2)
... +10
Continuous input current
2)
-0.2V
V
IN
10V
V
IN
< -0.2V or V
IN
> 10V
I
IN
self limited
| I
IN
|
2
mA
Operating temperature
T
j
-40 ...+150
C
Storage temperature
T
stg
-55 ... +150
Power dissipation
5)
T
C
= 85 C
6cm
2
cooling area , T
A
= 85 C
P
tot
21
1.1
W
Unclamped single pulse inductive energy
2)
E
AS
2
J
Load dump protection V
LoadDump
2)3)
= V
A
+ V
S
V
IN
= 0 and 10 V, t
d
= 400 ms, R
I
= 2
W,
R
L
= 6
W, V
A
= 13.5 V
V
LD
58
V
V
ESD
2
kV
40/150/56
Thermal resistance
junction - case:
R
thJC
3
K/W
SMD: junction - ambient
@ min. footprint
@ 6 cm
2
cooling area
4)
R
thJA
115
55
1For input voltages beyond these limits I
IN
has to be limited.
2not subject to production test, specified by design
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain
connection. PCB mounted vertical without blown air.
5not subject to production test, calculated by RthJA and Rds(on)
Electrostatic discharge voltage
2)
(Human Body Model)
according to
Jedec norm
EIA/JESD22-A114-B, Section 4
Jedec humidity category,J-STD-20-B
IEC climatic category; DIN
EN 60068-1
MSL1
2004-03-05
Page 3
BTS 118 D
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
= 25C, unless otherwise specified
min.
typ.
max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150, I
D
= 10 mA
V
DS(AZ)
42
-
55
V
Off-state drain current
T
j
= -40...+85 C, V
DS
= 32 V , V
IN
= 0 V
T
j
= 150 C
I
DSS
-
-
1.5
4
8
12
A
Input threshold voltage
I
D
= 0.
6 mA, T
j
= 25 C
I
D
= 0.
6 mA, T
j
= 150 C
V
IN(th)
1.3
0.8
1.7
-
2.2
-
V
On state input current
I
IN(on)
-
10
30
A
On-state resistance
V
IN
= 5 V, I
D
= 2.2 A, T
j
= 25 C
V
IN
= 5 V, I
D
= 2.2 A, T
j
= 150 C
R
DS(on)
-
-
90
160
120
240
m
W
On-state resistance
V
IN
= 10 V, I
D
= 2.2 A, T
j
= 25 C
V
IN
= 10 V, I
D
= 2.2 A, T
j
= 150 C
R
DS(on)
-
-
70
130
100
200
Nominal load current
5)
T
j
< 150C, V
IN
= 10 V, T
A
= 85 C, SMD
1)
I
D(Nom)
2.4
3.2
-
A
Nominal load current
5)
V
IN
= 10 V, V
DS
= 0.5 V, T
C
= 85 C, T
j
< 150C
I
D(ISO)
3.5
5
-
Current limit (active if V
DS
>2.5 V)
2)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 200 s
I
D(lim)
10
15
20
1@ 6 cm2 cooling area
2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 s.
5not subject to production test, calculated by RthJA and Rds(on)
2004-03-05
Page 4
BTS 118 D
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
= 25C, unless otherwise specified
min.
typ.
max.
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 4.7
W, V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
-
40
100
s
Turn-off time V
IN
to 10% I
D
:
R
L
= 4.7
W, V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
-
70
100
Slew rate on 70 to 50% V
bb
:
R
L
= 4.7
W, V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
-
0.4
1.5
V/s
Slew rate off 50 to 70% V
bb
:
R
L
= 4.7
W, V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
-
0.6
1.5
Protection Functions
1)
Thermal overload trip temperature
T
jt
150
175
-
C
Thermal hysteresis
2)
DT
jt
-
10
-
K
Input current protection mode
T
j
= 150 C
I
IN(Prot)
-
100
300
A
Unclamped single pulse inductive energy
2)
I
D
= 2.2 A, T
j
= 25 C, V
bb
= 12 V
E
AS
2
-
-
J
Inverse Diode
Inverse diode forward voltage
I
F
= 10.9 A, t
m
= 250 s, V
IN
= 0 V,
t
P
= 300 s
V
SD
-
1.0
1.5
V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
2004-03-05
Page 5
BTS 118 D
Block diagram
Inductive and overvoltage
output clamp
Terms
HITFET
IN
D
VIN
ID
VDS
1
IIN
S
Vbb
RL
2
3
HITFET
VZ
D
S
Short circuit behaviour
Input circuit (ESD protection)
Gate Drive
Source/
Ground
Input
V
IN
I
IN
I
DS
T
j
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