www.docs.chipfind.ru
CGY41
Semiconductor Group
1 of 7
Target DATASHEET
HiRel L- and S-Band GaAs General Purpose Amplifier
HiRel Discrete and Microwave Semiconductor
Single-stage monolithic microwave IC
(MMIC-amplifier )
Application range: 100 MHz to 3 GHz
Gain: 9.5 dB typ. @ 1.8 GHz
Low noise figure: 2.7 dB typ. @ 1.8 GHz
Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 *
Operating voltage range: 3 to 5.5 V
Input and output matched to 50
Individual current control with neg. gate bias
Hermetically sealed ceramic package micro-x
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering Code Circuit Diagram
(Pin Configuration)
Package
CGY41 (ql)
-
see below
Micro-X
(ql) Quality Level:
P: Professional Quality,
Ordering Code:
on request
H: High Rel Quality,
Ordering Code:
on request
S: Space Quality,
Ordering Code:
on request
ES: ESA Space Quality,
Ordering Code:
on request
(see order instructions for ordering example)
1
2
3
4
CGY41
Semiconductor Group
2 of 7
Target DATASHEET
Maximum ratings
Symbol
Value
Unit
Drain-voltage
V
D
5.5
V
Gate-voltage
V
G
-4 ... 0
V
Drain-gate voltage
V
DG
9.5
V
RF Input power
1)
P
RFIN
16
dBm
Channel temperature
T
Ch
175
C
Storage temperature range
T
stg
-55...+175
C
Total power dissipation (T
S
< 82C)
2)
P
tot
440
mW
Thermal resistance
Channel-soldering point
2)
R
thChS
155
K/W
Notes: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate
handling is required to protect the electrostatic sensitive MMIC against degradation due to excess
voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required
to achieve the guaranteed RF performance, stable operating conditions and adequate cooling.
1) @ V
D
> 4.5 V derating required.
2) Ts is measured on the source lead at the soldering point to the PCB.
CGY41
Semiconductor Group
3 of 7
Target DATASHEET
Electrical Characteristics
T
A
= 25 C, V
G
= 0 V, V
D
= 4.5 V, R
S
= R
L
= 50
,
==unless otherwise specified
(for application circuit see next page)
Characteristics
Symbol
min
typ
max
Unit
Drain current
I
D
40
60
80
mA
Power gain
f = 200 MHz
f = 1800 MHz
G
9.5
8.5
10.5
9.5
12
11
dB
Gain flatness
f = 200 to 1000 MHz
f = 800 to 1800 MHz
G
-
-
0.4
1.1
-
2
dB
Noise figure
f = 200 to 1000 MHz
f = 800 to 1800 MHz
F
-
-
2.5
2.7
-
4.0
dB
Input return loss
f = 200 to 1000 MHz
f = 800 to 1800 MHz
RL
IN
-
-
13
12
-
9.5
dB
Output return loss
f = 200 to 1000 MHz
f = 800 to 1800 MHz
RL
OUT
-
-
12
12
-
9.5
dB
Third order intercept point
Two tone intermodulation test
f
1
= 806 MHz, f
2
= 810 MHz
P
0
= 10 dBm ( both carriers )
IP3
31
32
-
dBm
1dB gain compression
f = 200 to 1800 MHz
P
1 dB
-
18
-
dBm
Gain control dynamic range,
(per gate control voltage)
f = 200 to 1000 MHz
f = 800 to 1800 MHz
G
-
-
30
20
-
-
dB
CGY41
Semiconductor Group
4 of 7
Target DATASHEET
Application Circuit ( f = 800 to 1800 MHz )
CGY41
50 Ohm Microstripline
Input
50Ohm
Output
50Ohm
3
2
V D
1
V
G
1
L
C
C3
L
2
2
C
C
4
4
1
D
L3
Legend of components
C
1
, C
2
C
3
, C
4
Chip capacitors 100 pF
Chip capacitors 1 nF
L
1
For optimized input matching
- discrete inductor: approx. 3nH, or
- printed microstripline inductor: Z approx. 100
,
l
e
approx. 5 mm
L
2
, L
3
- discrete inductor: approx. 40 nH, as e.g. 5 turns 0.25 mm copper
wire on nylon rod with M3-thread, or
- printed microstripline inductor
D
Z diode 5.6 V ( type BZW 22 C5 V 6 )
CGY41
Semiconductor Group
5 of 7
Target DATASHEET
Total Power Dissipation P
tot
= f (T
S
;T
A
)
0
0 50 100
150
A
S
tot
P
T T
;
[ C ]
[ mW ]
A
T
S
T
100
200
300
400
500
CGY41
Semiconductor Group
6 of 7
Target DATASHEET
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form:
Ordering Code: Q..........
CGY41 (ql)
(ql):
Quality Level
Ordering Example:
tbd
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division :
Tel.:
++89 234 24480
Fax.:
++89 234 28438
e-mail: martin.wimmers@infineon.com
Address:
Infineon Technologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
CGY41
Semiconductor Group
7 of 7
Target DATASHEET
Micro-X Package
Published by Infineon Technologies Semiconductors, High
Frequency Products Marketing, P.O.Box 801709, D-81617
Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are concerned,
liability is only assumed for components per se, not for
applications, processes and circuits implemented within
components or assemblies.
The information describes the type of component and shall not be
considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact
the Offices of Semiconductor Group in Germany or the Infineon
Technologies Companies and Representatives woldwide (see
address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in question
please contact your nearest Infineon Technologies Office,
Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC and
QS9000 manufacturer (this includes ISO
PDF 
ZIP