Jul-28-2003
1
SMBT3906/ MMBT3906
1
2
3
VPS05161
PNP Silicon Switching Transistor
High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
Complementary type:
SMBT3904/ MMBT3904 (NPN)
Type
Marking
Pin Configuration
Package
SMBT3906/ MMBT3906
s2A
1 = B
2 = E
3 = C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
40
V
Collector-base voltage
V
CBO
40
Emitter-base voltage
V
EBO
5
Collector current
I
C
200
mA
Total power dissipation-
T
S
= 71 C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
R
thJS
240
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
Jul-28-2003
2
SMBT3906/ MMBT3906
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
40
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
E
= 0
V
(BR)CBO
40
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector-base cutoff current
V
CB
= 30 V, I
E
= 0
I
CBO
-
-
50
nA
DC current gain
1)
I
C
= 100 A, V
CE
= 1 V
I
C
= 1 mA, V
CE
= 1 V
I
C
= 10 mA, V
CE
= 1 V
I
C
= 50 mA, V
CE
= 1 V
I
C
= 100 mA, V
CE
= 1 V
h
FE
60
80
100
60
30
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage
1)
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
V
CEsat
-
-
-
-
0.25
0.4
V
Base emitter saturation voltage-
1)
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
V
BEsat
0.65
-
-
-
0.85
0.95
1
Puls test: t
300s, D = 2%
Jul-28-2003
3
SMBT3906/ MMBT3906
AC Characteristics
Transition frequency
I
C
= 10 mA, V
CE
= 20 V, f = 100 MHz
f
T
250
-
-
MHz
Collector-base capacitance
V
CB
= 5 V, f = 1 MHz
C
cb
-
-
4.5
pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
-
10
Short-circuit input impedance
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
11e
2
-
12
k
Open-circuit reverse voltage transf. ratio
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
12e
0.1
-
10
10
-4
Short-circuit forward current transf. ratio
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
21e
100
-
400
-
Open-circuit output admittance
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
22e
3
-
60
S
Delay time
V
CC
= 3 V, I
C
= 10 mA, I
B1
= 1 mA,
V
BE(off)
= 0.5 V
t
d
-
-
35
ns
Rise time
V
CC
= 3 V, I
C
= 10 mA, I
B1
= 1 mA,
V
BE(off)
= 0.5 V
t
r
-
-
35
Storage time
V
CC
= 3 V, I
C
= 10 mA, I
B1
= I
B2
= 1mA
t
stg
-
-
225
Fall time
V
CC
= 3 V, I
C
= 10 mA, I
B1
= I
B2
= 1mA
t
f
-
-
75
Noise figure
I
C
= 100 A, V
CE
= 5 V, f = 1 kHz,
f = 200
Hz
, R
S
= 1
k
F
-
-
4
dB
Jul-28-2003
4
SMBT3906/ MMBT3906
Test circuit
Delay and rise time
EHN00059
275
10
-3.0 V
0
+0.5 V
<4.0
C
-10.6 V
D = 2%
300
<1.0
pF
k
ns
ns
Storage and fall time
EHN00060
275
10
-3.0 V
0
+9.1 V
<4.0 pF
C
-10.9 V
D = 2%
1N916
<1.0 ns
t
1
s
500
10 t
1
k
< <
Jul-28-2003
5
SMBT3906/ MMBT3906
DC current gain h
FE
=
(I
C
)
V
CE
= 1 V, normalized
EHP00774
10
10
mA
h
C
5
FE
10
1
0
10
-1
5
10
10
10
-1
0
1
2
125 C
25 C
-55 C
5
5
Saturation voltage I
C
=
(V
BEsat
; V
CEsat
)
h
FE
= 10
EHP00767
2
0
V
BE sat
C
10
1
10
0
5
V
mA
0.2
0.4
0.6
0.8
1.0
1.2
CE sat
V
,
5
10
2
V
BE
V
CE
Total power dissipation P
tot
=
(T
A
*; T
S
)
* Package mounted on epoxy
0
0
EHP00766
150
50
100
C
T
A
S
T
100
200
300
mW
400
P
tot
T T
;
A
S
Permissible Pulse Load
P
totmax
/P
totDC
=
(t
p
)
10
EHP00936
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot max
tot
P
DC
P
p
t
t
p
=
D
T
t
p
T
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