SMBTA42M
Nov-30-2001
1
NPN Silicon High-Voltage Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA92M (PNP)
VPW05980
1
2
3
5
4
Type
Marking
Pin Configuration
Package
SMBTA42M
s1D
1 = B 2 = C 3 = E 4=n.c. 5 = C SCT595
Maximum Ratings
Parameter
Symbol
Unit
Value
V
V
CEO
300
Collector-emitter voltage
Collector-base voltage
V
CBO
300
6
Emitter-base voltage
V
EBO
mA
DC collector current
500
I
C
100
Base current
I
B
Total power dissipation
, T
S
83 C
P
tot
W
1.5
150
C
Junction temperature
T
j
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
45
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
SMBTA42M
Nov-30-2001
2
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 100 A, I
B
= 0
V
(BR)CEO
300
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
E
= 0
V
(BR)CBO
300
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
6
-
-
Collector cutoff current
V
CB
= 200 V, I
E
= 0
I
CBO
-
-
100
nA
Collector-base cutoff current
V
CB
= 200 V, T
A
= 150 C
I
CBO
-
-
20
A
Emitter cutoff current
V
EB
= 3 V, I
C
= 0
I
EBO
-
-
100
nA
DC current gain 1)
I
C
= 1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 30 mA, V
CE
= 10 V
h
FE
25
40
40
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 20 mA, I
B
= 2 mA
V
CEsat
-
-
0.5
V
Base-emitter saturation voltage 1)
I
C
= 20 mA, I
B
= 2 mA
V
BEsat
-
-
0.9
AC Characteristics
-
-
Transition frequency
I
C
= 10 mA, V
CE
= 20 V, f = 100 MHz
f
T
MHz
50
-
Collector-base capacitance
V
CB
= 20 V, f = 1 MHz
C
cb
3
pF
-
1) Pulse test: t < 300
s; D < 2%
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