www.docs.chipfind.ru
2004-03-01
Page 1
SPN01N60C3
Rev. 2.1
Cool MOSTM
Power Transistor
V
DS
@ T
jmax
650
V
R
DS(on)
6
I
D
0.3
A
Feature
New revolutionary high voltage technology
Ultra low gate charge
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
SOT-223
VPS05163
1
2
3
4
Type
Package
Ordering Code
SPN01N60C3
SOT-223
Q67040-S4208
Marking
01N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
= 25 C
T
A
= 70 C
I
D
0.3
0.2
A
Pulsed drain current, t
p
limited by T
jmax
T
A
= 25 C
I
D puls
1.6
Gate source voltage static
V
GS
20
V
Gate source voltage AC (f >1Hz)
V
GS
30
Power dissipation,
T
A
= 25C
P
tot
1.8
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
2004-03-01
Page 2
SPN01N60C3
Rev. 2.1
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 0.8 A, T
j
= 125 C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - soldering point
R
thJS
-
35
-
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
110
-
75
72
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
C
Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V
(BR)DSS V
GS
=0V,
I
D
=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V,
I
D
=0.8A
-
700
-
Gate threshold voltage
V
GS(th)
I
D
=250
,
V
GS
=
V
DS
2.3
3
3.7
Zero gate voltage drain current
I
DSS
V
DS
=600V,
V
GS
=0V,
T
j
=25C,
T
j
=150C
-
-
0.5
-
1
50
A
Gate-source leakage current
I
GSS
V
GS
=30V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V,
I
D
=0.5A,
T
j
=25C
T
j
=150C
-
-
5.5
15.1
6
-
2004-03-01
Page 3
SPN01N60C3
Rev. 2.1
Electrical Characteristics , at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=0.2A
-
0.45
-
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f
=1MHz
-
100
-
pF
Output capacitance
C
oss
-
40
-
Reverse transfer capacitance
C
rss
-
2.5
-
Turn-on delay time
t
d(on)
V
DD
=350V, V
GS
=0/10V,
I
D
=0.3A, R
G
=100
-
45
-
ns
Rise time
t
r
-
30
-
Turn-off delay time
t
d(off)
-
60
90
Fall time
t
f
-
30
45
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=350V, I
D
=0.3A
-
0.9
-
nC
Gate to drain charge
Q
gd
-
2.2
-
Gate charge total
Q
g
V
DD
=350V, I
D
=0.3A,
V
GS
=0 to 10V
-
3.9
5
Gate plateau voltage
V
(plateau)
V
DD
=350V, I
D
=0.3A
-
5.5
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2004-03-01
Page 4
SPN01N60C3
Rev. 2.1
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
A
=25C
-
-
0.3
A
Inverse diode direct current,
pulsed
I
SM
-
-
1.6
Inverse diode forward voltage
V
SD
V
GS
=0V,
I
F
=
I
S
-
0.85
1.05 V
Reverse recovery time
t
rr
V
R
=350V,
I
F
=
I
S
,
di
F
/dt
=100A/s
-
200
340
ns
Reverse recovery charge
Q
rr
-
0.45
-
C
2004-03-01
Page 5
SPN01N60C3
Rev. 2.1
1 Power dissipation
P
tot
= f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9
SPN01N60C3
P
tot
2 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
=25C
10
0
10
1
10
2
10
3
V
V
DS
-3
10
-2
10
-1
10
0
10
1
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10ms
DC
3 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter: D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25C
parameter: t
p
= 10 s, V
GS
0
5
10
15
V
25
V
DS
0
0.5
1
1.5
A
2.5
I
D
5V
5.5V
6V
6.5V
7V
20V
10V
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