1
2001-07-25
SPN01N60S5
Preliminary data
Cool MOS Power-Transistor
New revolutionary high voltage technology
Ultra low gate charge
Extreme dv/dt rated
Optimized capacitances
Improved noise immunity
C
Power Semiconductors
O
O L
MOS
Product Summary
V
DS
@ T
jmax
650
V
R
DS(on)
6
I
D
0.3
A
SOT-223
Type
Package
Ordering Code
SPN01N60S5
SOT-223
Q67040-S4208
G,1
D,2/4
S,3
Marking
01N60S5
Maximum Ratings, at T
j
= 25
C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
= 25
C
T
A
= 70
C
I
D
0.3
0.2
A
Pulsed drain current
1)
T
A
= 25
C
I
D puls
1.6
Reverse diode dv/dt
I
S
= 0.3 A, V
DS
<V
DSS
, di/dt = 100 A/
s,
T
jmax
= 150
C
dv/dt
6
kV/
s
Gate source voltage
V
GS
20
V
Power dissipation
T
A
= 25
C
P
tot
1.8
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
2
2001-07-25
SPN01N60S5
Preliminary data
Electrical Characteristics, at T
j
= 25
C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal Characteristics
Thermal resistance, junction - soldering point
R
thJS
-
35
-
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
110
-
-
72
K/W
Static Characteristics, at T
j
= 25
C, unless otherwise specified
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA
V
(BR)DSS
600
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
= 250
A, T
j
= 25
C
V
GS(th)
2.3
3
3.7
Zero gate voltage drain current, V
DS
=V
DSS
V
GS
= 0 V, T
j
= 25
C
V
GS
= 0 V, T
j
= 150
C
I
DSS
-
-
0.5
-
1
50
A
Gate-source leakage current
V
GS
= 20 V, V
DS
= 0 V
I
GSS
-
-
100
nA
Drain-source on-state resistance
V
GS
= 10 V, I
D
= 0.2 A
R
DS(on)
-
5.5
6
1current limited by Tjmax
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm
(one layer, 70
m thick) copper area for drain
connection. PCB is vertical without blown air.
3
2001-07-25
SPN01N60S5
Preliminary data
Electrical Characteristics, at T
j
= 25
C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=0.2A
-
0.45
-
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
-
100
-
pF
Output capacitance
C
oss
-
40
-
Reverse transfer capacitance
C
rss
-
2.5
-
Turn-on delay time
t
d(on)
V
DD
=350V, V
GS
=10V,
I
D
=0.3A, R
G
=100
-
45
ns
Rise time
t
r
-
30
-
Turn-off delay time
t
d(off)
-
60
90
Fall time
t
f
-
30
45
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=350V, I
D
=0.3A
-
0.9
-
nC
Gate to drain charge
Q
gd
-
2.2
-
Total gate charge
Q
g
V
DD
=350V, I
D
=0.3A,
V
GS
=0 to 10V
-
3.9
5
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25
C
-
-
0.3
A
Inverse diode direct
current,pulsed
I
SM
-
-
1.6
Inverse diode forward voltage V
SD
V
GS
=0V, I
F
=0.3A
-
0.85
1.05 V
Reverse recovery time
t
rr
V
R
=100V, I
F=
l
S
,
di
F
/dt=100A/
s
-
200
340
ns
Reverse recovery charge
Q
rr
-
0.45
-
C
5
2001-07-25
SPN01N60S5
Preliminary data
Typ. output characteristic
I
D
= f (V
DS
)
Parameter: V
GS
, T
j
= 25
C
0
5
10
15
V
25
V
DS
0
0.5
1
1.5
A
2.5
I
D
5V
5.5V
6V
6.5V
7V
20V
10V
Drain-source on-resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 0.2 A, V
GS
= 10 V
-60
-20
20
60
100
C
180
T
j
0
1
2
3
4
5
6
7
8
9
10
11
12
15
R
D
S
(
o
n
)
98%
typ.
Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0 V, f=1 MHz
0
10
20
30
40
50
60
70
80
V
100
V
DS
0
10
1
10
2
10
3
10
pF
C
C
rss
C
oss
C
iss
Typ. transfer characteristics
I
D
= f ( V
GS
)
V
DS
2 x I
D
x R
DS(on)max
0
4
8
12
V
GS
20
V
0
0.5
1
1.5
A
2.5
I
D
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