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Электронный компонент: CD40106BMS

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7-1327
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
CD40106BMS
CMOS Hex Schmitt Triggers
Features
High Voltage Type (20V Rating)
Schmitt Trigger Action with No External Components
Hysteresis Voltage (Typ.)
- 0.9V at VDD = 5V
- 2.3V at VDD = 10V
- 3.5V at VDD = 15V
Noise Immunity Greater than 50%
No Limit on Input Rise and Fall Times
Low VDD to VSS Current During Slow Input Ramp
100% Tested for Quiescent Current at 20V
5V, 10V and 15V Parametric Ratings
Maximum Input Current of 1
A at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
o
C
Standardized Symmetrical Output Characteristics
Meets All Requirements of JEDEC Tentative Standard
No. 13B, "Standard Specifications for Description of
`B' Series CMOS Devices"
Applications
Wave and Pulse Shapers
High Noise Environment Systems
Monostable Multivibrators
Astable Multivibrators
Description
CD40106BMS consists of six Schmitt trigger circuits. Each
circuit functions as an inverter with Schmitt trigger action on
the input. The trigger switches at different points for positive
and negative going signals. The difference between the
positive going voltage (VP) and the negative going voltage
(VN) is defined as hysteresis voltage (VH) (see Figure 17).
The CD40106BMS is supplied in these 14 lead outline
packages:
Braze Seal DIP
H4Q
Frit Seal DIP
H1B
Ceramic Flatpack
H3W
December 1992
File Number
3354
Pinout
CD40106BMS
TOP VIEW
Functional Diagram
Logic Diagram
FIGURE 1. 1 OF 6 SCHMITT TRIGGERS
A
G = A
B
H = B
C
I = C
VSS
VDD
F
L = F
E
K = E
D
J = D
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1
A
2
G = A
3
B
4
H = B
5
C
6
I = C
9
D
8
J = D
11
E
10
K = E
13
F
12
L = F
A
*
1 (3, 5, 9, 11, 13)
G
*
2 (4, 6, 8, 10, 12)
*
ALL INPUTS ARE PROTECTED
BY CMOS PROTECTION
NETWORK
VDD
VSS
7-1328
Specifications CD40106BMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
1/32 Inch (1.59mm
0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
ja
jc
Ceramic DIP and FRIT Package . . . . .
80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . .
70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For T
A
= -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For T
A
= +100
o
C to +125
o
C (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For T
A
= Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1
+25
o
C
-
2
A
2
+125
o
C
-
200
A
VDD = 18V, VIN = VDD or GND
3
-55
o
C
-
2
A
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25
o
C
-100
-
nA
2
+125
o
C
-1000
-
nA
VDD = 18V
3
-55
o
C
-100
-
nA
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
1
+25
o
C
-
100
nA
2
+125
o
C
-
1000
nA
VDD = 18V
3
-55
o
C
-
100
nA
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
50
mV
Output Voltage
VOH15
VDD = 15V, No Load (Note 2)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C 14.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25
o
C
0.53
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25
o
C
1.4
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25
o
C
3.5
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25
o
C
-
-0.53
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25
o
C
-
-1.8
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25
o
C
-
-1.4
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25
o
C
-
-3.5
mA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1
+25
o
C
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
A
1
+25
o
C
0.7
2.8
V
Functional
F
VDD = 2.8V, VIN = VDD or GND
7
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND
7
+25
o
C
VDD = 18V, VIN = VDD or GND
8A
+125
o
C
VDD = 3V, VIN = VDD or GND
8B
-55
o
C
Positive Trigger
Threshold Voltage
(See Figure 17)
VP5
VDD = 5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
2.2
3.6
V
VP10
VDD = 10V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
4.6
7.1
V
VP15
VDD = 15V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
6.8
10.8
V
Negative Trigger
Threshold Voltage
(See Figure 17)
VN5
VDD = 5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
0.9
2.8
V
VN10
VDD = 10V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
2.5
5.2
V
VN15
VDD = 15V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
4
7.4
V
Hysteresis Voltage
(See Figure 17)
VH5
VDD = 5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
0.3
1.6
V
VH10
VDD = 10V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
1.2
3.4
V
VH15
VDD = 15V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
1.6
5.0
V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-1329
Specifications CD40106BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1, 2)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
TPHL
TPLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
280
ns
10, 11
+125
o
C, -55
o
C
-
378
ns
Transition Time
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
9
+25
o
C
-
200
ns
10, 11
+125
o
C, -55
o
C
-
270
ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
1
A
+125
o
C
-
30
A
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
A
+125
o
C
-
60
A
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
A
+125
o
C
-
120
A
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125
o
C
0.36
-
mA
-55
o
C
0.64
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
0.9
-
mA
-55
o
C
1.6
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
2.4
-
mA
-55
o
C
4.2
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-
-0.36
mA
-55
o
C
-
-0.64
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-
-1.15
mA
-55
o
C
-
-2.0
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-
-0.9
mA
-55
o
C
-
-1.6
mA
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-
-2.4
mA
-55
o
C
-
-4.2
mA
Propagation Delay
TPHL
TPLH
VDD = 10V
1, 2, 3
+25
o
C
-
140
ns
VDD = 15V
1, 2, 3
+25
o
C
-
120
ns
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V
1, 2, 3
+25
o
C
-
80
ns
7-1330
Specifications CD40106BMS
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on
initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K., Input TR, TF < 20ns
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25
o
C
-
7.5
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
-
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
o
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
0.2
A
Output Current (Sink)
IOL5
20% x Pre-Test Reading
Output Current (Source)
IOH5A
20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
7-1331
Specifications CD40106BMS
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST
READ AND RECORD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION
OPEN
GROUND
VDD
9V
-0.5V
OSCILLATOR
50kHz
25kHz
Static Burn-In 1
Note 1
2, 4, 6, 8, 10, 12
1, 3, 5, 7, 9, 11, 13
14
Static Burn-In 2
Note 1
2, 4, 6, 8, 10, 12
7
1, 3, 5, 9, 11,
13, 14
Dynamic Burn-
In Note 1
-
7
14
2, 4, 6, 8, 10, 12
1, 3, 5, 9, 11, 13
Irradiation
Note 2
2, 4, 6, 8, 10, 12
7
1, 3, 5, 9, 11,
13, 14
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K
5%, VDD = 18V
0.5V
2. Each pin except VDD and GND will have a series resistor of 47K
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V
0.5V
Typical Performance Characteristics
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
10V
5V
AMBIENT TEMPERATURE (T
A
) = +25
o
C
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
0
5
10
15
15
10
5
20
25
30
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
10V
5V
AMBIENT TEMPERATURE (T
A
) = +25
o
C
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
0
5
10
15
7.5
5.0
2.5
10.0
12.5
15.0
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)