1
File Number
3723.6
HGT1S20N60B3S, HGTP20N60B3,
HGTG20N60B3
40A, 600V, UFS Series N-Channel IGBTs
The HGT1S20N60B3S, the HGTP20N60B3 and the
HGTG20N60B3 are Generation III MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49050.
Symbol
Features
40A, 600V at T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . . . . . 140ns at 150
o
C
Short Circuit Rated
Low Conduction Loss
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Packaging
JEDEC TO-263AB
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP20N60B3
TO-220AB
G20N60B3
HGT1S20N60B3S
TO-263AB
G20N60B3
HGTG20N60B3
TO-247
HG20N60B3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A.
C
E
G
COLLECTOR
(FLANGE)
E
G
G
COLLECTOR
(FLANGE)
E
C
G
C
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT1S20N60B3S
HGTP20N60B3
HGTG20N60B3
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
V
Collector to Gate Voltage, R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
40
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
20
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
160
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
C
= 150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
30A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
165
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.32
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
4
s
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
10
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE
= 360V, T
C
= 125
o
C, R
G
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 150
o
C
-
-
1.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
, V
GE
= 15V
T
C
= 25
o
C
-
1.8
2.0
V
T
C
= 150
o
C
-
2.1
2.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
3.0
5.0
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
100
nA
Switching SOA
SSOA
T
C
= 150
o
C, V
GE
=
15V, R
G
= 10
,
L =
45
H
V
CE
= 480V
100
-
-
A
V
CE
= 600V
30
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
8.0
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
80
105
nC
V
GE
= 20V
-
105
135
nC
Current Turn-On Delay Time
t
d(ON)I
T
C
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 100
H
-
25
-
ns
Current Rise Time
t
rI
-
20
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
220
275
ns
Current Fall Time
t
fI
-
140
175
ns
Turn-On Energy
E
ON
-
475
-
J
Turn-Off Energy (Note 3)
E
OFF
-
1050
-
J
Thermal Resistance
R
JC
-
-
0.76
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 were tested per
JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-
Off Energy Loss. Turn-On losses include diode losses.
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
4
6
8
10
V
GE
, GATE TO EMITTER VOLTAGE (V)
100
80
60
40
20
0
12
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
CE
= 10V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
100
80
60
40
20
0
0
2
4
6
8
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
= 15V
12V
V
GE
= 10V
V
GE
= 9V
V
GE
= 8.5V
V
GE
= 8.0V
V
GE
= 7.0V
PULSE DURATION = 250
s
DUTY CYCLE <0.5%
T
C
= 25
o
C
V
GE
= 7.5V
10
20
30
40
50
0
25
50
75
100
125
150
V
GE
= 15V
I
CE
, DC COLLECT
OR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
20
40
60
80
100
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
PULSE DURATION = 250
s
T
C
= -40
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
T
C
= 25
o
C
C, CAP
A
CIT
ANCE (pF)
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
1000
2000
3000
4000
5000
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
0
3
6
9
12
15
0
120
240
360
480
600
V
CE
, COLLECT
OR T
O
EMITTER
V
O
L
T
A
GE (V)
0
20
40
Q
G
, GATE CHARGE (nC)
V
CE
= 400V
V
CE
= 200V
80
100
60
V
CE
= 600V
T
C
= 25
o
C
I
g(REF)
= 1.685mA
R
L
= 30
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
4
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d(ON)I
, TURN-ON DELA
Y TIME (ns)
10
20
50
30
40
0
10
20
30
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
T
J
= 150
o
C, R
G
= 10
, L = 100
H
V
CE
= 480V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME (ns)
500
400
300
200
100
0
10
20
30
40
V
CE
= 480V, V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 100
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
= 480V, V
GE
= 15V
t
rI
,
TURN-ON RISE TIME
(ns)
1
10
100
0
10
20
30
40
T
J
= 150
o
C, R
G
= 10
, L = 100
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
,
F
ALL TIME
(ns)
1000
100
10
0
10
20
30
40
V
CE
= 480V, V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 100
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
10
20
30
40
E
ON
, TURN-ON ENERGY LOSS
(
J)
1400
1000
0
V
CE
= 480V, V
GE
= 15V
1200
800
600
400
200
T
J
= 150
o
C, R
G
= 10
, L = 100
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS
(
J)
2500
2000
1500
1000
500
0
0
10
20
30
40
V
CE
= 480V, V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 100
H
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
5
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
5
10
20
30
40
10
100
500
V
CE
= 480V
T
J
= 150
o
C, T
C
= 75
o
C, V
GE
= 15V
R
G
= 10
, L = 100
H
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
(DUTY FACTOR = 50%)
R
JC
= 0.76
o
C/W
100
200
300
400
500
600
700
0
20
0
40
80
100
120
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
T
C
= 150
o
C, V
GE
= 15V, R
G
= 10
60
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.1
0.2
0.05
0.02
SINGLE PULSE
t
1
t
2
P
D
Z
JC
,
NORMALIZED THERMAL RESPONSE
0.5
0.01
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
Test Circuit and Waveform
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
R
G
= 10
L = 100
H
V
DD
= 480V
+
-
RHRP3060
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
6
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler's body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions
are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as "ECCOSORBD
LD26" or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V
GEM
. Exceeding the rated V
GE
can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
CE
) plots are possible using
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows f
MAX1
or f
MAX2
whichever is smaller at each
point. The information is based on measurements of a typical
device and is bounded by the maximum rated junction
temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on- state time for a 50% duty factor. Other definitions
are possible. t
d(OFF)I
and t
d(ON)I
are defined in Figure 17.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JM
. t
d(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON
). The
allowable dissipation (P
D
) is defined by P
D
= (T
JM
- T
C
)/R
JC
.
The sum of device switching and conduction losses must
not exceed P
D
. A 50% duty factor was used (Figure 13)
and the conduction losses (P
C
) are approximated by
P
C
= (V
CE
x I
CE
)/2.
E
ON
and E
OFF
are defined in the switching waveforms
shown in Figure 17. E
ON
is the integral of the instantaneous
power loss (I
CE
x V
CE
) during turn-on and E
OFF
is the
integral of the instantaneous power loss (I
CE
x V
CE
) during
turn-off. All tail losses are included in the calculation for
E
OFF
; i.e., the collector current equals zero (I
CE
= 0).
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
ECCOSORBDTM is a trademark of Emerson and Cumming, Inc.
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