3-116
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
HGTA32N60E2
32A, 600V N-Channel IGBT
Features
32A, 600V
Latch Free Operation
Typical Fall Time 620ns
High Input Impedance
Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
o
C and +150
o
C.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTA32N60E2
TO-218
GA32N60E2
NOTE: When ordering, use the entire part number.
April 1995
Package
JEDEC MO-093AA (5 LEAD TO-218)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
5 EMITTER
4 EMITTER KELVIN
3 COLLECTOR
2 NO CONNECTION
1 GATE
COLLECTOR
(FLANGE)
C
G
E
EMITTER
KELVIN
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTA32N60E2
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600
V
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
600
V
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
50
A
at V
GE
= 15V at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . .I
C90
32
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
200
A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Sage Operating Area T
J
= +150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
200A at 0.8 BV
CES
-
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
208
W
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to +150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
3
s
at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
15
s
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junctions temperature.
2. V
CE(PEAK)
= 360V, T
C
= +125
o
C, R
GE
= 25
.
INTERSIL IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
File Number
2833.3
3-117
Specifications HGTA32N60E2
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
-
-
250
A
V
CE
= 0.8 BV
CES
T
C
= +125
o
C
-
-
4.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C90
,
V
GE
= 15V
T
C
= +25
o
C
-
2.4
2.9
V
T
C
= +125
o
C
-
2.4
3.0
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1.0mA,
V
CE
= V
GE
T
C
= +25
o
C
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
500
nA
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C90
, V
CE
= 0.5 BV
CES
-
6.5
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C90
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
200
260
nC
V
GE
= 20V
-
265
345
nC
Current Turn-On Delay Time
t
D(ON)I
L = 500
H, I
C
= I
C90
, R
G
= 25
,
V
GE
= 15V, T
J
= +125
o
C,
V
CE
= 0.8 BV
CES
-
100
-
ns
Current Rise Time
t
RI
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
630
820
ns
Current Fall Time
t
FI
-
620
800
ns
Turn-Off Energy (Note 1)
W
OFF
-
3.5
-
mJ
Thermal Resistance
R
JC
-
0.5
0.6
o
C/W
NOTE:
1. Turn-Off Energy Loss (W
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A) The HGTA32N60E2 was tested per JEDEC standard No. 24-1 Meth-
od for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
100
80
60
40
20
0
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
CE
= 15V
T
C
= +150
o
C
T
C
= +25
o
C
T
C
= -40
o
C
100
90
80
70
60
50
40
30
20
10
0
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
0
2
4
6
8
10
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, T
C
= +25
o
C
V
GE
= 7.5V
V
GE
= 6.5V
V
GE
= 6.0V
V
GE
= 7.0V
V
GE
= 15V
V
GE
= 10V
V
GE
= 8.0V
V
GE
= 5.5V
3-118
HGTA32N60E2
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT
Typical Performance Curves
(Continued)
60
50
40
30
20
10
0
I
CE
, DC COLLECT
OR CURRENT (A)
+25
+50
+75
+100
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
V
GE
= 10V
1.0
0.8
0.6
0.4
0.2
0.0
t
FI
, F
ALL TIME (
s)
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
V
GE
= 10V AND 15V
T
J
= +150
o
C, R
G
= 25
L = 50
H
V
CE
= 240V
V
CE
= 480V
12000
10000
8000
6000
4000
2000
0
C, CAP
ACIT
ANCE (pF)
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
C
ISS
C
OSS
C
RSS
600
450
150
300
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE (V)
V
GE
, GA
TE-EMITTER VOL
T
AGE (V)
10
5
0
R
L
= 12
I
G(REF)
= 2.75mA
V
GE
= 10V
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
s)
COLLECTOR-EMITTER VOLTAGE
V
CC
= BV
CES
V
CC
= BV
CES
GATE-
EMITTER
VOLTAGE
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
0
6
5
4
3
2
1
0
V
CE(ON)
, SA
TURA
TION VOL
T
AGE (V)
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C
V
GE
= 10V
V
GE
= 15V
20
10
1.0
0.1
W
OFF
, TURN-OFF SWITCHING LOSS (mJ)
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C
R
G
= 25
L = 50
H
V
CE
= 240V, V
GE
= 10V, 15V
V
CE
= 480V, V
GE
= 10V, 15V
3-119
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
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1130 Brussels, Belgium
TEL: (32) 2.724.2111
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Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
HGTA32N60E2
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER
CURRENT
FIGURE 10. OPERATING FREQUENCY vs COLLECTOR-
EMITTER CURRENT AND VOLTAGE
Typical Performance Curves
(Continued)
1.5
1.0
0.5
0.0
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C
V
CE
= 480V
L = 50
H
V
GE
= 15V, R
G
= 50
V
GE
= 10V, R
G
= 50
V
GE
= 15V, R
G
= 25
V
GE
= 10V, R
G
= 25
t
D(OFF)I
, TURN-OFF DELA
Y (
s)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
NOTE:
100
10
f
OP
, OPERA
TING FREQUENCY (KHz)
f
MAX1
= 0.05/t
D(OFF)I
f
MAX2
= (P
D
- P
C
)/W
OFF
P
C
= DUTY FACTOR = 50%
R
JC
= 0.5
o
C/W
V
CE
= 480V
V
CE
= 240V
1
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, V
GE
= 15V
R
G
= 25
, L = 50
H
Operating Frequency Information
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I
CE
) plots are possible using the information shown
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows f
MAX1
or
f
MAX2
whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/t
D(OFF)I
. t
D(OFF)I
deadtime
(the denominator) has been arbitrarily held to 10% of the on-
state time for a 50% duty factor. Other definitions are
possible. t
D(OFF)I
is defined as the time between the 90%
point of the trailing edge of the input pulse and the point
where the collector current falls to 90% of its maximum
value. Device turn-off delay can establish an additional
frequency limiting condition for an application other than
T
JMAX
. t
D(OFF)I
is important when controlling output ripple
under a lightly loaded condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/W
OFF
. The allowable
dissipation (P
D
) is defined by P
D
= (T
JMAX
- T
C
)/R
JC
. The
sum of device switching and conduction losses must not
exceed P
D
. A 50% duty factor was used (Figure 10) so that
the conduction losses (P
C
) can be approximated by P
C
=
(V
CE
x I
CE
)/2. W
OFF
is defined as the sum of the instanta-
neous power loss starting at the trailing edge of the input
pulse and ending at the point where the collector current
equals zero (I
CE
- 0A).
The switching power loss (Figure 10) is defined as f
MAX1
x
W
OFF
. Turn on switching losses are not included because
they can be greatly influenced by external circuit conditions
and components.
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