1
January 1998
Features
2.0A, 250V
r
DS(ON)
= 2.0
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Description
This is an N-Channel enhancement mode silicon gate power
field effect transistor. It is an advanced power MOSFET
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of opera-
tion. This power MOSFET is designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17443.
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF614
TO-220AB
IRF614
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
File Number
3273.1
IRF614
2.0A, 250V, 2.0 Ohm,
N-Channel Power MOSFET
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF614
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
250
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . V
DGR
250
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
2.0
1.3
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
8.0
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
20
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.16
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . E
AS
61
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A, (Figure 10)
250
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
J
= 125
o
C
-
-
250
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V,
(Figure 7)
2.0
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 2.5A, (Figures 8, 9)
-
1.6
2.0
A
Forward Transconductance (Note 2)
g
fs
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 2.5A,
(Figure 12)
0.8
1.2
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 0.5 x Raterd BV
DSS
, I
D
2.0A, R
L
= 61
V
GS
= 10V, (Figures 17, 18)
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
-
8.9
13
ns
Rise Time
t
r
-
12
18
ns
Turn-Off Delay Time
t
d(OFF)
-
18
27
ns
Fall Time
t
f
-
8.9
15
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 2.0A, V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Temperature
-
9.6
14.4
nC
Gate to Source Charge
Q
gs
-
2.4
3.6
nC
Gate to Drain "Miller" Charge
Q
gd
-
4.5
6.7
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz, (Figure 11)
-
180
-
pF
Output Capacitance
C
OSS
-
53
-
pF
Reverse Transfer Capacitance
C
RSS
-
14
-
pF
IRF614
3
Internal Drain Inductance
L
D
Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
JC
-
-
6.4
o
C/W
Thermal Resistance Junction to Ambient
R
JA
Free Air Operation
-
-
62.5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET Sym-
bol Showing the Integral
Reverse P-N Junction
Rectifier
-
-
2.0
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
8.0
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 2.0A, V
GS
= 0V, (Figure 13)
-
-
2.0
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 2.0A, dI
SD
/dt = 100A/
s
67
-
340
ns
Reverse Recovery Charge
Q
RR
T
J
= 25
o
C, I
SD
= 2.0A, dI
SD
/dt = 100A/
s
0.24
0.54
1.2
C
NOTES:
2. Pulse test: pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 10V, starting T
J
= 25
o
C, L = 6.18mH, R
G
= 50
,
peak I
AS
= 5A. See Figures 15, 16.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
L
S
L
D
G
D
S
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
125
0.4
0.8
1.2
1.6
2.0
150
IRF614
4
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
Typical Performance Curves
Unless Otherwise Specified (Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
10
Z
JC
, TRANSIENT
THERMAL IMPEDENCE (
o
C/W)
10
-3
10
-2
10
-1
1
10
-5
10
-4
1
10
-2
0.1
SINGLE PULSE
0.1
0.02
0.2
0.5
0.01
0.05
NOTES:
PEAK T
J
= P
DM
x Z
JC
+ T
C
P
DM
t
1
t
2
10
DUTY FACTOR: D = t
1
/t
2
1
10
10
2
10
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
0.1
10
-2
I
D
, DRAIN CURRENT (AMPERES)
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
1
s
100
s
1ms
10ms
DC
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
0
0
20
40
60
80
0.6
1.2
1.8
2.4
3.0
100
80
s PULSE TEST
V
GS
= 5.5V
V
GS
= 10V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 6.5V
0
0.6
0
1
2
3
5
1.2
1.8
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2.4
4
3.0
80
s PULSE TEST
V
GS
= 10V
V
GS
= 4V
V
GS
= 5V
V
GS
= 6V
V
GS
= 6.5V
V
GS
= 5.5V
0
2
4
6
10
I
D
, DRAIN CURRENT (A)
V
G
, GATE TO SOURCE VOLTAGE (V)
8
10
1
0.1
10
-2
80
s PULSE TEST
V
DS
= 2 x V
GS
IRF614
5
NOTE: Heating effect of 2.0
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
2
4
6
8
r
DS(ON)
, DRAIN T
O
SOURCE
I
D
, DRAIN CURRENT (A)
0
V
GS
= 10V
ON RESIST
ANCE (
)
V
GS
= 20V
10
8
6
4
2
0
10
NORMALIZED DRAIN T
O
SOURCE
3.0
1.8
1.2
0.6
0.2
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
2.4
80
V
GS
= 10V, I
D
= 2.5A
ON RESIST
ANCE
160
1.25
1.05
0.95
0.85
0.75
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
120
160
1.15
80
I
D
= 250mA
500
100
0
10
C, CAP
A
CIT
ANCE (pF)
300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
400
200
100
1
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
ISS
C
OSS
C
RSS
I
D
, DRAIN CURRENT (A)
g
fs
, TRANSCONDUCT
ANCE (S)
0
0
0.8
1.6
2.4
3.2
0.4
0.8
1.2
1.6
2.0
4.0
V
DS
=
2 x V
GS
MAX, PULSE TEST = 80
s
T
J
= 150
o
C
T
J
= 25
o
C
0
0.8
1.2
1.6
0.4
0.1
1
10
I
DR
, SOURCE T
O
DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
T
J
= 150
o
C
T
J
= 25
o
C
2.0
10
-2
IRF614
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