4-335
File Number
2319.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
IRFP350
16A, 400V, 0.300 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17434.
Features
16A, 400V
r
DS(ON)
= 0.300
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC STYLE TO-247
TOP VIEW
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP350
TO-247
IRFP350
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
Data Sheet
July 1999
4-336
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFP350
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
400
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
400
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
16
10
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
64
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
180
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.44
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
700
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A (Figure 10)
400
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
-
-
250
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V (Figure 7)
16
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 8.9A (Figures 8, 9)
-
0.250
0.300
Forward Transconductance (Note 2)
g
fs
V
DS
= 2 x V
GS
, I
D
= 8.0A (Figure 12)
8.0
10
-
S
Turn-On Delay Time
t
D(ON)
V
DD
= 200V, I
D
= 16A, R
GS
= 6.2
, V
GS
= 10V,
R
L
= 12.3
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
12
18
ns
Rise Time
t
r
-
51
77
ns
Turn-Off Delay Time
t
D(OFF)
-
75
110
ns
Fall Time
t
f
-
47
71
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g
V
GS
= 10V, I
D
= 16A, V
DS
= 0.8 x Rated BV
DSS
.
I
G(REF)
= 1.5mA (Figure 14)
Gate Charge is Essentially Independent of Operating
Temperature
-
87
130
nC
Gate to Source Charge
Q
gs
-
10
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
33
-
nC
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
2000
-
pF
Output Capacitance
C
OSS
-
400
-
pF
Reverse-Transfer Capacitance
C
RSS
-
100
-
pF
Internal Drain Inductance
L
D
Measured Between the
Contact Screw on Header
that is Closer to Source
and Gate Pins and Center
of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
12.5
-
nH
Junction to Case
R
JC
-
-
0.70
o
C/W
Junction to Ambient
R
JA
Free Air Operation
-
-
30
o
C/W
L
S
L
D
G
D
S
IRFP350
4-337
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
16
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
64
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 16A, V
GS
= 0V (Figure 13)
-
-
1.6
V
Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
SD
= 15A, dI
SD
/dt = 100A/
s
270
-
1300
ns
Reverse Recovered Charge
Q
RR
T
J
= 150
o
C, I
SD
= 15A, dI
SD
/dt = 100A/
s
1.7
-
8.1
C
NOTES:
2. Pulse Test: Pulse width
300
s, duty cycle
2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 40V, starting T
J
= 25
o
C, L = 5.66mH, R
G
= 50
, peak I
AS
= 15A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
50
75
100
25
150
20
16
12
0
8
I
D
, DRAIN CURRENT (A)
4
125
Z
JC
, NORMALIZED TRANSIENT
1
0.1
10
-2
10
-2
10
-5
10
-4
10
-3
0.1
1
10
t
1
, RECTANGULAR PULSE DURATION (S)
10
-3
DUTY FACTOR: D = t
1
/t
2
t
2
P
DM
t
1
NOTES:
t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+T
C
SINGLE PULSE
0.2
0.1
0.05
0.01
0.02
0.5
THERMAL IMPED
ANCE
IRFP350
4-338
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
10
2
10
1
10
10
2
0.1
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
3
10
3
1
10
s
100
s
1ms
DC
10ms
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
OPERATION IN THIS
REGION IS LIMITED
BY r
DS(ON)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
40
80
120
160
0
200
25
20
15
0
10
I
D
, DRAIN CURRENT (A)
V
GS
= 5.5V
V
GS
= 4.5V
V
GS
= 5.0V
V
GS
= 4.0V
PULSE DURATION = 80
s
5
V
GS
= 6.0V
V
GS
= 10V
DUTY CYCLE = 0.5% MAX
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
4
6
8
0
10
25
20
15
0
10
I
D
, DRAIN CURRENT (A)
5
V
GS
= 10V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 5.5V
V
GS
= 4.0V
V
GS
= 6.0V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
V
SD
, GATE TO SOURCE VOLTAGE (V)
10
2
10
1
0.1
0
2
4
6
8
10
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
= 2 x V
GS
52
I
D,
DRAIN CURRENT (A)
13
26
39
0
65
0.75
0.60
0.45
0
0.30
r
DS(ON)
, DRAIN T
O
SOURCE
V
GS
= 20V
0.15
V
GS
= 10V
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
2.5
1.5
0.5
80
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
2.0
1.0
0
0
60
120
160
ON RESIST
ANCE V
O
L
T
A
GE
-20
-40
20
40
100
140
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
I
D
= 8.9A, V
GS
= 10V
IRFP350
4-339
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
1.25
1.05
0.85
60
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
1.15
0.95
0.75
-20
20
100
160
BREAKDO
WN V
O
L
T
A
GE
0
-40
40
80
120 140
I
D
= 250
A
1
2
10
2
5
10
2
C, CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5000
4000
3000
2000
1000
0
5
C
RSS
C
ISS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
I
D
, DRAIN CURRENT (A)
5
10
15
20
0
25
25
20
15
0
10
g
fs
, TRANSCONDUCT
ANCE (S)
5
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
= 2 x V
GS
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
2
10
1
0.1
0
0.4
0.8
1.2
1.6
2.0
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
Q
g
, GATE CHARGE (nC)
30
60
90
120
0
150
4
20
8
V
GS,
GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
16
V
DS
= 320V
I
D
= 16A
V
DS
= 200V
V
DS
= 80V
12
0
IRFP350
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