4-395
File Number
2412.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
IRFR320, IRFU320
3.1A, 400V, 1.800 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17404.
Features
3.1A, 400V
r
DS(ON)
= 1.800
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR320
TO-252AA
IFR320
IRFU320
TO-251AA
IFU320
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e., IRFR3209A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
Data Sheet
July 1999
4-396
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFR320, IRFU320
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
400
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
400
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
3.1
2.0
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
12
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
50
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.4
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
190
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V, (Figure 10)
400
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
-
-
250
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V,
(Figure 7)
3.1
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 1.7A, V
GS
= 10V, (Figures 8, 9)
-
1.600
1.800
Forward Transconductance (Note 2)
g
fs
V
DS
10V, I
D
= 2.0A, (Figure 12)
1.7
2.6
-
S
Turn-On Delay Time
t
d(ON)
V
DD
=
200V, I
D
3.1A, R
GS
= 18
, R
L
= 63
,
V
GS
= 10V
MOSFET Switching Times are Essentially Indepen-
dent of Operating Temperature
-
10
15
ns
Rise Time
t
r
-
14
21
ns
Turn-Off Delay Time
t
d(OFF)
-
30
45
ns
Fall Time
t
f
-
13
20
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 3.1A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= 1.5mA, (Figure 14)
Gate Charge is Essentially Independent of Operat-
ing Temperature
-
13
20
nC
Gate to Source Charge
Q
gs
-
2.2
3.3
nC
Gate to Drain "Miller" Charge
Q
gd
-
7.2
11
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz, (Figure 11)
-
350
-
pF
Output Capacitance
C
OSS
-
64
-
pF
Reverse Transfer Capacitance
C
RSS
-
8.1
-
pF
Internal Drain Inductance
L
D
Measured From the Drain
Lead, 6.0mm (0.25in) from
Package to Center
of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6.0mm
(0.25in) from Package to
Source Bonding Pad
-
7.5
-
nH
Thermal Resistance, Junction to Case
R
JC
-
-
2.5
o
C/W
Thermal Resistance, Junction to Ambient
R
JA
Typical Solder Mount
-
-
110
o
C/W
L
S
L
D
G
D
S
IRFR320, IRFU320
4-397
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the In-
tegral Reverse P-N
Junction Rectifier
-
-
3.1
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
12
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 3.1A, V
GS
= 0V,
(Figure 13)
-
-
1.6
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 3.1A, dI
SD
/dt = 100A/
s
120
270
600
ns
Reverse Recovery Charge
Q
RR
T
J
= 25
o
C, I
SD
= 3.1A, dI
SD
/dt = 100A/
s
0.64
1.4
3.0
C
NOTES:
2. Pulse test: pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 3.1mH, R
GS
= 25
,
peak I
AS
= 3.1A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
4.0
3.2
2.4
1.6
0.8
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
1
10
Z
JC
, TRANSIENT THERMAL IMPED
ANCE
t
1
, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
t
1
t
2
0.1
0.02
0.2
0.5
0.01
0.05
10
IRFR320, IRFU320
4-398
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
I
D
, DRAIN CURRENT (A)
100
100
1
10
1
0.1
1000
BY r
DS(ON)
AREA IS LIMITED
OPERATION IN THIS
10
s
100
s
1ms
10ms
DC
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
0
40
80
120
160
1
2
3
4
5
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
0
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 6.0V
DUTY CYCLE = 0.5% MAX
0
0
3
6
9
15
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
12
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
= 5.0V
V
GS
= 4.0V
1
2
3
4
5
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
-2
10
1
0.1
I
D
, DRAIN CURRENT (A)
T
J
= 150
o
C
T
J
= 25
o
C
10
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
350V
I
D
, DRAIN CURRENT (A)
r
DS(ON)
, DRAIN T
O
SOURCE
10
8
6
4
2
0
0
3
6
9
12
15
V
GS
= 20V
V
GS
= 10V
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN T
O
SOURCE
3.0
1.8
1.2
0.6
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
2.4
80
160
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 1.7A
IRFR320, IRFU320
4-399
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
NORMALIZED DRAIN T
O
SOURCE
1.25
1.05
0.95
0.85
0.75
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.15
80
I
D
= 250
A
160
BREAKDO
WN V
O
L
T
A
G
E
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C, CAP
A
CIT
ANCE (pF)
750
600
450
300
150
0
1
2
5
10
2
5
10
2
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
C
ISS
C
OSS
C
RSS
5
4
3
2
1
0
0
1
2
3
4
5
I
D
, DRAIN CURRENT (A)
g
fs
, TRANSCONDUCT
ANCE (S)
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
100
10
1
0.1
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
T
J
= 150
o
C
T
J
= 25
o
C
1.5
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0V
0
4
8
12
16
20
I
D
= 3.1A
Q
G(TOT)
, TOTAL GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE (V)
20
16
12
8
4
0
V
DS
= 200V
V
DS
= 320V
V
DS
= 80V
IRFR320, IRFU320
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