4-371
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
IRFR110, IRFU110
4.7A, 100V, 0.540 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These advanced
power MOSFETs are designed for use in applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Features
4.7A, 100V
r
DS(ON)
= 0.540
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
175
o
C Operating Temperature
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFU110
TO-251AA
IFU110
IRFR110
TO-252AA
IFR110
NOTE: When ordering, use the entire part number.
G
D
S
JEDEC TO-251AA
JEDEC TO-252AA
GATE
SOURCE
DRAIN
DRAIN (FLANGE)
DRAIN (FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
3275.3
4-372
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFR110, IRFU110
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
100
V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
4.7
A
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
3.3
A
Pulsed Drain Current (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
17
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
30
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.2
W/
o
C
Single Pulse Avalanche Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
19
mj
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 10)
100
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
J
= 150
o
C
-
-
250
A
On-State Drain Current
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
4.7
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance
(Note 4)
r
DS(ON)
I
D
= 3.3A, V
GS
= 10V (Figures 8, 9)
-
0.41
0.540
Forward Transconductance (Note 4)
g
fs
V
DS
= 50V, I
DS
= 3.3A (Figure 12)
1.3
2.0
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 50V, I
D
5.6A, R
GS
= 24
, R
L
= 9.1
,
V
GS
= 10V
MOSFET Switching Times are Essentially Indepen-
dent of Operating Temperature
-
7.6
11
ns
Rise Time
t
r
-
24
36
ns
Turn-Off Delay Time
t
d(OFF)
-
14
21
ns
Fall Time
t
f
-
14
21
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 10V, I
D
5.6A, V
DS
= 0.8 x Rated BV
DSS
,
R
L
= 14
, I
G(REF)
= 1.5mA (Figure 14)
Gate Charge is Essentially Independent of Operat-
ing Temperature
-
5.2
7.7
nC
Gate to Source Charge
Q
gs
-
1.5
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
2.2
-
nC
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz
(Figure 11)
-
180
-
pF
Output Capacitance
C
OSS
-
82
-
pF
Reverse Transfer Capacitance
C
RSS
-
15
-
pF
Internal Drain Inductance
L
D
Measured from the
Drain Lead, 6mm
(0.25in) from Package
to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
Measured from The
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
-
7.5
-
nH
Junction to Case
R
JC
-
-
5.0
o
C/W
Junction to Ambient
R
JA
Free Air Operation
-
-
110
o
C/W
L
S
L
D
G
D
S
IRFR110, IRFU110
4-373
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
4.7
A
Pulse Source to Drain Current (Note 2)
I
SDM
-
-
17
A
Source to Drain Diode Voltage (Note 4)
V
SD
T
J
= 25
o
C, I
SD
= 4.7A, V
GS
= 0V (Figure 13)
-
-
2.5
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 5.6A, dI
SD
/dt = 100A/
s
46
96
200
ns
Reverse Recovery Charge
Q
RR
T
J
= 25
o
C, I
SD
= 5.6A, dI
SD
/dt = 100A/
s
0.17
0.38
0.83
C
NOTES:
2. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
3. V
DD
= 25V, starting T
J
= 25
o
C, L = 1.3mH, R
G
= 25
, peak I
AS
= 4.7A.
4. Pulse test: pulse width
300
s, duty cycle
2%.
G
D
S
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
175
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
150
1
2
3
4
5
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
1
0.01
10
0.1
1
10
-4
10
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
Z
JC
, TRANSIENT
THERMAL IMPED
ANCE
0.5
0.2
0.1
0.05
0.01
0.02
IRFR110, IRFU110
4-374
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
10
s
100
s
1ms
10ms
DC
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10
2
10
1.0
0.1
1
10
10
2
T
C
= 25
o
C
OPERATION IN THIS
AREA LIMITED
BY r
DS(ON)
10
3
T
J
= MAX RATED
SINGLE PULSE
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80
s
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10
8
6
4
2
0
0
10
20
30
40
50
DUTY CYCLE = 0.5% MAX
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10
8
6
4
2
0
0
2
4
6
8
10
V
GS
10V
V
GS
8V
V
GS
7V
V
GS
= 6V
V
GS
5V
V
GS
4V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
J
= 175
o
C
T
J
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10
1
0.1
10
-2
0
2
4
6
8
10
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
V
GS
= 10V
5
4
3
2
1
0
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
r
DS(ON)
, DRAIN T
O
SOURCE
V
GS
= 20V
PULSE DURATION = 80
s
ON RESIST
ANCE (
)
DUTY CYCLE = 0.5% MAX
I
D
= 3.3A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
T
J
, JUNCTION TEMPERATURE (
o
C)
3.0
2.4
1.8
1.2
0.5
0
NORMALIZED DRAIN T
O
SOURCE
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
IRFR110, IRFU110
4-375
FIGURE 10. DRAIN TO SOURCE BREAKDOWN VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
D
= 250
A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
T
J
, JUNCTION TEMPERATURE (
o
C)
1.25
1.15
1.05
0.95
0.85
0.75
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
C
RSS
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= CGS + CGD
C
RSS
= CGD
C
OSS
CDS + CGS
500
400
300
200
100
0
1
10
10
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C, CAP
A
CIT
ANCE (pF)
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
g
fs
, TRANSCONDUCT
ANCE (S)
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
T
J
= 175
o
C
T
J
= 25
o
C
1.0
0.1
0
0.4
0.8
1.2
1.6
2.0
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
10
10
2
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
I
D
= 5.6A
20
16
12
8
4
0
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
IRFR110, IRFU110
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