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Электронный компонент: GA75TS60U

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05/20/02
GA75TS60U
"HALF-BRIDGE" IGBT INT-A-PAK
Features
Features
Features
Features
Features
V
CES
=
600
V
V
CE
(on) typ.
= 1.7V
@V
GE
=
15V
,
I
C
=
75A
Parameter
Typ.
Max.
Units
R
JC
Thermal Resistance, Junction-to-Case - IGBT
--
0.44
R
JC
Thermal Resistance, Junction-to-Case - Diode
--
0.70
C/W
R
CS
Thermal Resistance, Case-to-Sink - Module
0.1
--
Mounting Torque, Case-to-Heatsink
S
--
6.0
N m
Mounting Torque, Case-to-Terminal 1, 2 & 3
T
--
5.0
Weight of Module
200
--
g
Thermal / Mechanical Characteristics
Ultra-Fast
TM
Speed IGBT
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
75
I
CM
Pulsed Collector Current
150
A
I
LM
Peak Switching Current,
150
I
FM
Peak Diode Forward Current
150
V
GE
Gate-to-Emitter Voltage
20
V
V
ISOL
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
P
D
@ T
C
= 25C
Maximum Power Dissipation
285
W
P
D
@ T
C
= 85C
Maximum Power Dissipation
150
T
J
Operating Junction Temperature Range
-40 to +150
C
T
STG
Storage Temperature Range
-40 to +125
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Very low conduction and switching losses
HEXFRED
TM
antiparallel diodes with ultra- soft
recovery
Industry standard package
UL approved
Benefits
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power conversion: UPS,
SMPS, Welding
Lower EMI, requires less snubbing
Generation 4 IGBT technology
.
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1
PD -50050D
GA75TS60U
2
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Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
340
510
V
CC
= 400V, V
GE
= 15V
Q
ge
Gate - Emitter Charge (turn-on)
--
48
72
nC
I
C
= 75A
Q
gc
Gate - Collector Charge (turn-on)
--
120
170
T
J
= 25C
t
d(on)
Turn-On Delay Time
--
110
--
R
G1
= 27
, R
G2
= 0
,
t
r
Rise Time
--
94
--
ns
I
C
= 75A
t
d(off)
Turn-Off Delay Time
--
250
--
V
CC =
360V
t
f
Fall Time
--
180
--
V
GE
= 15V
E
on
Turn-On Switching Energy
--
1.95
--
mJ
E
off (1)
Turn-Off Switching Energy
--
4.4
--
E
ts (1)
Total Switching Energy
--
6.35 12.6
C
ies
Input Capacitance
--
7880
--
V
GE
= 0V
C
oes
Output Capacitance
--
770
--
pF
V
CC
= 30V
C
res
Reverse Transfer Capacitance
--
98
--
= 1 MHz
t
rr
Diode Reverse Recovery Time
--
133
--
ns
I
C
= 75A
I
rr
Diode Peak ReverseCurrent
--
94
--
A
R
G1
= 27
Q
rr
Diode Recovery Charge
--
6274
--
nC
R
G2
= 0
di
(rec)
M
/dt
Diode Peak Rate of Fall of Recovery
--
2061
--
A/s
V
CC =
360V
During t
b
di/dt =1300A/s
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
GE
= 0V, I
C
= 1mA
V
CE(on)
Collector-to-Emitter Voltage
--
1.7
2.2
V
GE
= 15V, I
C
= 75A
--
1.76
--
V
V
GE
= 15V, I
C
= 75A, T
J
= 125C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
I
C
= 0.5mA
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-11
--
mV/C V
CE
= V
GE
, I
C
= 500A
g
fe
Forward Transconductance ,,
--
83
--
S
V
CE
= 25V, I
C
= 75A
I
CES
Collector-to-Emitter Leaking Current
--
--
1.0
mA
V
GE
= 0V, V
CE
= 600V
--
--
10
V
GE
= 0V, V
CE
= 600V, T
J
= 125C
V
FM
Diode Forward Voltage - Maximum
--
3.3
--
V
I
F
= 75A, V
GE
= 0V
--
3.1
--
I
F
= 75A, V
GE
= 0V, T
J
= 125C
I
GES
Gate-to-Emitter Leakage Current
--
--
250
nA
V
GE
= 20V
Dynamic Characteristics - T
J
= 125C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
GA75TS60U
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3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0.1
1
10
100
0
10
20
30
40
50
60
70
f, Frequency (KHz)
LOAD CURRENT (A)
10
100
1000
1.0
1.5
2.0
2.5
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
o
T = 150 C
J
o
1
10
100
1000
5.0
6.0
7.0
8.0
9.0
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
o
T = 150 C
J
o
For both:
D uty cy cle : 5 0 %
T = 12 5 C
T = 90 C
G a te d rive a s sp e cifie d
s in k
J
P ow e r Dis sip ation = W
270
Power Dissipation = 65 W
25V
V
CE
= 25V
80s PULSE WIDTH
25
25
GA75TS60U
4
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
37.5
C
I = A
75
C
I = A
150
C
37.5A
25
50
75
100
125
150
0
20
40
60
80
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
T
J
, Junction Temperature (C)
0 . 0 1
0 . 1
1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
1
th
J
C
t , R ec ta n g ular P u ls e D u ratio n (S e co n d s )
D = 0 .5 0
S in g le P u ls e
(T h e rm a l R e s is ta n c e )
T
h
e
r
m
a
l
I
m
pedanc
e -
Z


0 .0 1
0 .0 2
0.0 5
0.1 0
0 .2 0
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
GA75TS60U
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5
0
10
20
30
40
50
5
6
7
8
9
10
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 360V
V = 15V
T = 25 C
I = 75A
CC
GE
J
C
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = Ohm
V = 15V
V = 360V
G
GE
CC
I = A
150
C
I = A
75
C
I = A
37.5
C
R
G1
=27
;R
G2
= 0
125C
1
10
100
0
2000
4000
6000
8000
10000
12000
14000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
C
ies
C
oes
C
res
0
100
200
300
400
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 75A
CC
C
R
G1
, Gate Resistance
(
)