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Электронный компонент: IR2153Z

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Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Undervoltage lockout
Programmable oscillator frequency
f
=
+
1
1.4 (R
75 ) C
T
T
Matched propagation delay for both channels
Micropower supply startup current of 90 A.
Shutdown function turns off both channels
Low side output in phase with RT
Description
The IR2153Z is a high voltage, high speed, self-oscillating
power MOSFET and IGBT driver with both high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The front end features a program-
mable oscillator which is similar to the 555 timer. The
output drivers feature a high pulse
current
buffer stage and
PD-91800
IR2153Z
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
VOFFSET
600V max.
Duty Cycle
50%
IO+/-
200 mA / 400 mA
Vclamp
15.6V
Deadtime (typ.)
1.2 s
an internal deadtime designed for minimum driver cross-
conduction. Propagation delays for the two channels are
matched to simplify use in 50% duty cycle applications.
The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
that operates off a high voltage rail up to 600 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissi-
pation ratings are measured under board mounted and still air conditions.
Symbol
Parameter
Min.
Max.
Units
V
B
High Side Floating Supply Voltage
-0.3
625
V
S
High Side Floating Supply Offset Voltage
V
B
- 25
V
B
+ 0.3
V
HO
High Side Floating Output Voltage
V
S
- 0.3
V
B
+ 0.3
V
LO
Low Side Output Voltage
-0.3
V
CC
+ 0.3
V
RT
R
T
Voltage
-0.3
V
CC
+ 0.3
V
CT
C
T
Voltage
-0.3
V
CC
+ 0.3
I
CC
Supply Current (Note 1)
--
25
I
RT
R
T
Output Current
-5
5
dV
s
/dt
Allowable Offset Supply Voltage Transient
--
50
V/ns
P
D
Package Power Dissipation @ T
A
+25C
--
1.0
Rth
JA
Thermal Resistance, Junction to Ambient
--
100
T
J
Junction Temperature
-55
125
T
S
Storage Temperature
-55
150
C
T
L
Lead Temperature (Soldering, 10 seconds)
--
300
www.irf.com
1
mA
W
C/W
V
IR2153Z
2
www.irf.com
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, C
L
= 1000 pF and T
A
= 25C unless otherwise specified.
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
structure between the chip V
CC
and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip V
CC
and the rectified line voltage and a local decoupling capacitor from
V
CC
to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. There-
fore, this circuit should not be driven by a DC, low impedance power source of greater than V
CLAMP
.
Note 1:
Because of the IR2153's application specificity toward off-line supply systems, this IC contains a zener clamp
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
t
r
Turn-On Rise Time
--
80
165
t
f
Turn-Off Fall Time
--
35
100
ns
t
sd
Shutdown Propagation Delay
--
660
--
DT
Deadtime
--
1.2
--
s
D
R
T
Duty Cycle
--
50
--
%
Symbol
Definition
Min.
Max.
Units
V
B
High Side Floating Supply Absolute Voltage
V
S
+ 10
V
S
+ 20
V
S
High Side Floating Supply Offset Voltage
--
600
V
HO
High Side Floating Output Voltage
V
S
V
B
V
LO
Low Side Output Voltage
0
V
CC
I
CC
Supply Current (Note 1)
--
5
mA
V
Typical Connections
V B
H O
V S
L O
V C C
R T
C T
C O M
6 0 0 V
M A X
S h u t d o w n
IR2153Z
IR2153Z
www.irf.com
3
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, C
L
= 1000 pF, C
T
= 1 nF and T
A
= 25C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
f
OSC
Oscillator Frequency
--
20.0
--
R
T
= 35.7 k
W
--
100
--
R
T
= 7.04 k
W
V
CLAMP
V
CC
Zener Shunt Clamp Voltage
--
15.6
--
I
CC
= 5 mA
V
CT+
2/3 V
CC
Threshold
--
8.0
--
V
CT-
1/3 V
CC
Threshold
--
4.0
--
V
CTSD
C
T
shutdown Input Threshold
--
2.2
--
V
RT+
R
T
High Level Output Voltage, V
CC
- R
T
--
0
100
I
RT
= -100 A
--
200
300
I
RT
= -1 mA
V
RT-
R
T
Low Level Output Voltage
--
20
50
I
RT
= 100 A
--
200
300
I
RT
= 1 mA
V
OH
High Level Output Voltage, V
BIAS
- V
O
--
--
100
I
O
= 0A
V
OL
Low Level Output Voltage, V
O
--
--
100
I
O
= 0A
I
LK
Offset Supply Leakage Current
--
--
50
V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
Supply Current
--
10
--
I
QCCUV
Micropower V
CC
Supply Startup Current
--
90
--
V
CC
< V
CCUV
I
QCC
Quiescent V
CC
Supply Current
--
400
--
V
CC
> V
CCUV
I
CT
C
T
Input Current
--
0.001
1.0
V
CCUV+
V
CC
Supply Undervoltage Positive Going
--
9.0
--
Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative Going
--
8.0
--
Threshold
V
CCUVH
V
CC
Supply Undervoltage Lockout Hysteresis
--
1.0
--
V
I
O+
Output High Short Circuit Pulsed Current
--
200
--
V
O
= 0V
I
O-
Output Low Short Circuit Pulsed Current
--
400
--
V
O
= 15V
kHz
mV
V
V
mA
A
IR2153Z
4
www.irf.com
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
Figure 3. Deadtime Waveform Definitions
HO
LO
V
CC
V
CCUV
+
C
T
R
T
V
CLAMP
IR2153Z
www.irf.com
5
Lead Definitions
Lead
Symbol
Description
R
T
Oscillator timing resistor input,in phase with HO for normal IC operation
C
T
Oscillator timing capacitor input, the oscillator frequency according to the following equation:
f
=
+
1
1.4 (R
75 ) C
T
T
where 75
W
is the effective impedance of the R
T
output stage
V
B
High side floating supply
HO
High side gate drive output
V
S
High side floating supply return
V
CC
Low side and logic fixed supply
LO
Low side gate drive output
COM
Low side return
Functional Block Diagram
V
B
PULSE
GEN
DELAY
HV
LEVEL
SHIFT
V
CC
PULSE
FILTER
DEAD
TIME
LO
V
S
COM
R
S
Q
15.6V
C
T
R
T
UV
DETECT
R
Q
S
Q
DEAD
TIME
HO
LOGIC
-
-
-
+
+
+
R
R
R/2
R/2
IR2153Z
6
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Case Outline and Dimensions MO-036AA
IR2125Z
IR2153Z
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 8/27