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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25C
Continuous Drain Current
38
ID @ VGS = 10V, TC = 100C
Continuous Drain Current
24
I D M
Pulsed Drain Current
152
PD @ TC = 25C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
150
mJ
IAR
Avalanche Current
38
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
11.5 (typical)
g
PD - 90337G
o
C
A
08/21/01
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1
Product Summary
Part Number B
VDSS
R
DS(on)
I
D
IRF150 100V 0.055
38A
For footnotes refer to the last page
REPETITIVE AVALANCHE AND dv/dt RATED
IRF150
HEXFET
TRANSISTORS
JANTX2N6764
THRU-HOLE (TO-204AA/AE)
JANTXV2N6764
[REF:MIL-PRF-19500/543]
The HEXFET
technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
n
Repetitive Avalanche Ratings
n
Dynamic dv/dt Rating
n
Hermetically Sealed
n
Simple Drive Requirements
n
Ease of Paralleling
TO-3
100V, N-CHANNEL
IRF150
2
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Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
--
--
0.83
RthJA
Junction to Ambient
--
-- 30
Typical socket mount
C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
38
ISM
Pulse Source Current (Body Diode)
--
--
152
VSD
Diode Forward Voltage
--
--
1.9
V
T
j
= 25C, IS =38A, VGS = 0V
trr
Reverse Recovery Time
--
--
500
nS
Tj = 25C, IF = 38A, di/dt
100A/
s
QRR Reverse Recovery Charge
--
--
2.9
c
VDD
30V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
--
-- V VGS = 0V, ID = 1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
0.13
--
V/C
Reference to 25C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
-- 0.055 VGS = 10V, ID =24A
Resistance
--
-- 0.065
VGS =10V, ID =38A
VGS(th)
Gate Threshold Voltage
2.0
-- 4.0 V VDS = VGS, ID =250A
gfs
Forward Transconductance
9.0
--
-- S (
) VDS > 15V, IDS =24A
IDSS
Zero Gate Voltage Drain Current
--
--
25
VDS=80V, VGS=0V
--
--
250
VDS =80V
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS =20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS =-20V
Qg
Total Gate Charge
50
--
125 VGS =10V, ID= 38A
Qgs
Gate-to-Source Charge
8.0
--
22
nC
VDS =50V
Qgd
Gate-to-Drain (`Miller') Charge
25
--
65
td
(on)
Turn-On Delay Time
--
--
35
VDD =50V, ID =38A,
tr
Rise Time
--
--
190
VGS =10V,RG =2.35
td
(off)
Turn-Off Delay Time
--
--
170
tf
Fall Time
--
--
130
LS + LD
Total Inductance
--
6.1
--
Ciss
Input Capacitance
--
3700
VGS = 0V, VDS =25V
Coss
Output Capacitance
--
1100
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
200
--
nA
nH
ns
A
Measured from the center of
drain pad to center of source
pad
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3
IRF150
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRF150
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13 a& b
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5
IRF150
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
GS
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