Parameter
Max.
Units
V
DS
Drain- Source Voltage
-12
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -4.5V
9.5
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -4.5V
6.0
A
I
DM
Pulsed Drain Current
76
P
D
@T
A
= 25C
Power Dissipation
2.5
P
D
@T
A
= 70C
Power Dissipation
1.6
Linear Derating Factor
0.02
W/C
E
AS
Single Pulse Avalanche Energy
60
mJ
V
GS
Gate-to-Source Voltage
12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
7/7/99
IRF7233
HEXFET
Power MOSFET
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
50
C/W
Thermal Resistance
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
V
DSS
= -12V
R
DS(on)
= 0.020
Description
Absolute Maximum Ratings
W
www.irf.com
1
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
T op V ie w
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
PD- 91849D
SO-8
IRF7233
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
300s; duty cycle
2%.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -2.5A, V
GS
= 0V
t
rr
Reverse Recovery Time
43
65
ns
T
J
= 25C, I
F
= -2.5A
Q
rr
Reverse RecoveryCharge
35
52
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
-76
-2.5
A
When mounted on 1 inch square copper board, t<10 sec
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
S
D
G
Starting T
J
= 25C, L = 1.3mH
R
G
= 25
, I
AS
= 9.5A.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-14
V
V
GS
= 0V, I
D
= -5.0mA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-12
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.001
V/C
Reference to 25C, I
D
= -1mA
0.013 0.020
V
GS
= -4.5V, I
D
= -9.5A
0.023 0.033
V
GS
= -2.5V, I
D
= -6.0A
V
GS(th)
Gate Threshold Voltage
-0.6
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
3.3
S
V
DS
= -10V, I
D
= -9.5A
-10
V
DS
= -12V, V
GS
= 0V
-1.0
V
DS
= -9.6V, V
GS
= 0V
-100
V
DS
= -12V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -12V
Gate-to-Source Reverse Leakage
100
V
GS
= 12V
Q
g
Total Gate Charge
49
74
I
D
= -9.5A
Q
gs
Gate-to-Source Charge
9.3
14
nC
V
DS
= -10V
Q
gd
Gate-to-Drain ("Miller") Charge
22
32
V
GS
= -5.0V
t
d(on)
Turn-On Delay Time
26
V
DD
= -10V
t
r
Rise Time
540
I
D
= -9.5A
t
d(off)
Turn-Off Delay Time
77
R
D
= 1.0
t
f
Fall Time
370
R
G
= 6.2
C
iss
Input Capacitance
4530 6000
V
GS
= 0V
C
oss
Output Capacitance
2400
pF
V
DS
= -10V
C
rss
Reverse Transfer Capacitance
2220
= 1.0kHz
IRF7233
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0
2 0
4 0
6 0
8 0
1 0 0
0
2
4
6
8
1 0
D
D S
20s PULSE W IDTH
T = 25C
A
-
I
,
D
r
a
i
n-
t
o
-
S
our
c
e
C
u
r
r
e
n
t (
A
)
-V , D ra in -to -So u rce V olta g e (V)
J
-1.5V
VG S
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BO TTO M - 1.5V
0
2 0
4 0
6 0
8 0
1 0 0
0
2
4
6
8
1 0
D
D S
20 s P U L S E W ID TH
T = 1 50C
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
r
r
e
n
t
(A
)
-V , D ra in -to -Sou rce V olta g e (V )
J
V G S
T O P - 7 .5 V
- 5 .0 V
- 4 .0 V
- 3 .5 V
- 3 .0 V
- 2 .5 V
- 2 .0 V
B O TT O M - 1 .5 V
-1 .5 V
1
1 0
1 0 0
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
T = 2 5 C
T = 1 5 0 C
J
J
G S
D
A
-I
,
D
r
a
i
n
-
t
o
-
S
o
u
rc
e
C
u
rr
e
n
t
(A
)
-V , G a te -to -S o u rc e V o lta ge (V )
V = -1 0 V
2 0 s P U L S E W ID TH
D S
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-4.5V
-9.5A
IRF7233
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
2 0 0 0
3 0 0 0
4 0 0 0
5 0 0 0
6 0 0 0
0
2
4
6
8
1 0
1 2
C
,
C
apa
c
i
t
anc
e
(
p
F
)
A
D S
-V , D ra in-to-So urc e Vo lta g e (V)
C
iss
C
o ss
C
rss
G S
iss g s g d d s
rss g d
o ss d s g d
V = 0V, f = 1k Hz
C = C + C , C SH ORTE D
C = C
C = C + C
1
1 0
1 0 0
0 . 0
1 . 0
2 . 0
3 . 0
T = 25C
T = 150C
J
J
V = 0V
G S
S D
SD
A
-
I
,
R
e
v
e
r
s
e
D
r
ai
n C
u
r
r
e
nt
(A
)
-V , S ou rce -to-D ra in Volta g e (V)
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
0
10
20
30
40
50
60
70
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-9.5A
V
=-10V
DS
IRF7233
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature
( C)
-I , Drain Current (A)
C
D
25
50
75
100
125
150
0
20
40
60
80
100
120
140
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
-4.2A
-7.6A
-9.5A
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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