7322d1.p65
www.irf.com
1
Parameter
Maximum
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -4.5V
-5.3
A
I
D
@ T
A
= 70C
-4.3
I
DM
Pulsed Drain Current
-43
P
D
@T
A
= 25C
Power Dissipation
2.0
W
P
D
@T
A
= 70C
1.3
Linear Derating Factor
16
mW/C
V
GS
Gate-to-Source Voltage
12
V
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to +150
C
q
Co-packaged HEXFET
Power MOSFET
and Schottky Diode
q
Ideal For Buck Regulator Applications
q
P-Channel HEXFET
q
Low V
F
Schottky Rectifier
q
Generation 5 Technology
q
SO-8 Footprint
IRF7322D1
FETKY
TM
TM
TM
TM
TM
MOSFET / Schottky Diode
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
I
SD
-2.9A, di/dt
-77A/s, V
DD
V
(BR)DSS
, T
J
150C
Pulse width
300s; duty cycle
2%
Surface mounted on FR-4 board, t
10sec.
Parameter
Maximum
Units
R
JA
Junction-to-Ambient
62.5
C/W
Absolute Maximum Ratings
(T
A
= 25C unless otherwise noted)
Thermal Resistance Ratings
Description
V
DSS
= -20V
R
DS(on)
= 0.058
Schottky Vf = 0.39V
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
T op V ie w
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
S O -8
3/17/99
PD- 91705A
IRF7322D1
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-20
--
--
V
V
GS
= 0V, I
D
= -250A
R
DS(on)
Static Drain-to-Source On-Resistance
--
0.049 0.062
V
GS
= -4.5V, I
D
= -2.9A
--
0.082 0.098
V
GS
= -2.7V, I
D
= -1.5A
V
GS(th)
Gate Threshold Voltage
-0.70
--
--
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
--
5.9
--
S
V
DS
= -10V, I
D
= -1.5A
I
DSS
Drain-to-Source Leakage Current
--
--
-1.0
V
DS
= -16V, V
GS
= 0V
--
--
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 55C
I
GSS
Gate-to-Source Forward Leakage
--
--
100
V
GS
= -12.0V
Gate-to-Source Reverse Leakage
--
--
-100
V
GS
= 12.0V
Q
g
Total Gate Charge
--
19
29
I
D
= -2.9A
Q
gs
Gate-to-Source Charge
--
4.0
6.1
nC
V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge
--
7.7
12
V
GS
= -4.5V (see figure 6)
t
d(on)
Turn-On Delay Time
--
15
22
V
DD
= -10V
t
r
Rise Time
--
40
60
I
D
= -2.9A
t
d(off)
Turn-Off Delay Time
--
42
63
R
G
= 6.0
t
f
Fall Time
--
49
73
R
D
= 3.4
C
iss
Input Capacitance
--
780
--
V
GS
= 0V
C
oss
Output Capacitance
--
470
--
pF
V
DS
= -15V
C
rss
Reverse Transfer Capacitance
--
240
--
= 1.0MHz (see figure 5)
MOSFET Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
A
n A
ns
Parameter
Min. Typ.
Max.
Units
Conditions
I
S
Continuous Source Current (Body Diode) --
--
-2.5
A
I
SM
Pulsed Source Current (Body Diode)
--
--
-21
V
SD
Body Diode Forward Voltage
--
--
-1.2
V
T
J
= 25C, I
S
= -2.9A, V
GS
= 0V
t
rr
Reverse Recovery Time (Body Diode)
--
47
71
ns
T
J
= 25C, I
F
= -2.9A
Q
rr
Reverse Recovery Charge
--
49
73
nC
di/dt = 100A/s
MOSFET Source-Drain Ratings and Characteristics
2
Parameter
Max. Units.
Conditions
I
F(av)
Max. Average Forward Current
2.7
50% Duty Cycle. Rectangular Wave, T
A
= 25C
2
T
A
= 70C
I
SM
Max. peak one cycle Non-repetitive
120
5s sine or 3s Rect. pulse
Following any rated
Surge current
11
10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
A
A
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
V
FM
Max. Forward voltage drop
0.50
I
F
= 1.0A, T
J
= 25C
0.62
I
F
= 2.0A, T
J
= 25C
0.39
I
F
= 1.0A, T
J
= 125C
0.57
I
F
= 2.0A, T
J
= 125C .
I
RM
Max. Reverse Leakage current
0.02
V
R
= 20V
T
J
= 25C
8
T
J
= 125C
C
t
Max. Junction Capacitance
92
pF
V
R
= 5Vdc ( 100kHz to 1 MHz) 25C
dv/dt
Max. Voltage Rate of Charge
3600 V/ s Rated V
R
Schottky Diode Electrical Specifications
V
mA
See Fig. 14
IRF7322D1
www.irf.com
3
2
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V = -10V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
0.1
1
10
100
0.1
1
10
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.1
1
10
100
0.1
1
10
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
J
T , Junction T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
or
m
a
l
i
z
ed)
A
I = -2.9 A
V = -4 .5V
D
G S
Power Mosfet Characteristics
IRF7322D1
4
www.irf.com
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
Power Mosfet Characteristics
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1 4 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
A
D S
-V , D rain-to-S ourc e V oltage (V )
V = 0V , f = 1M H z
C = C + C , C S H O R T E D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
is s
C
os s
C
rs s
0
2
4
6
8
1 0
0
5
1 0
1 5
2 0
2 5
3 0
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
I = -2.9A
V = -16V
D
D S
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7322D1
www.irf.com
5
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
R
DS
(on) , Drain-to-Source On Resistance (
)
R
DS
(on) , Drain-to-Source On Resistance (
)
Fig 10. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Power Mosfet Characteristics
0 . 0
0 . 2
0 . 4
0 . 6
0 . 8
0
4
8
1 2
1 6
2 0
A
-I , Drain Current (A)
D
V = -4.5V
G S
V = -2.7V
G S
0 . 0 3
0 . 0 4
0 . 0 5
0 . 0 6
0 . 0 7
0 . 0 8
0 . 0
2 . 0
4 . 0
6 . 0
8 . 0
A
G S
V , Gate-to-Source Voltage (V)
I = -5.3A
D
PDF 
ZIP