N-CHANNEL MOSFET

P-CHANNEL MOSFET

Top View

N-Channel

P-Channel

Drain-Source Voltage

-30

Gate-Source Voltage

± 20

= 25°C

7.3

-5.3

= 70°C

5.9

-4.2

Pulsed Drain Current

-30

Continuous Source Current (Diode Conduction)

2.5

-2.5

= 25°C

2.5

= 70°C

1.6

Single Pulse Avalanche Energy

140

Avalanche Current

4.0

-2.8

Repetitive Avalanche Energy

0.20

Peak Diode Recovery dv/dt

dv/dt

3.8

-2.2

V/ ns

Junction and Storage Temperature Range

STG

-55 to + 150 °C

HEXFET

Power MOSFET

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements,

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave soldering

techniques.

02/25/04

SO-8

Generation V Technology

Ultra Low On-Resistance

Complimentary Half Bridge

Surface Mount

Fully Avalanche Rated

IRF7389

Description

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambient

°C/W

Continuous Drain Current

Maximum Power Dissipation

Symbol Maximum

Units

N-Ch P-Ch

DSS

30V -30V

DS(on)

0.029 0.058

Absolute Maximum Ratings

( T

= 25°C Unless Otherwise Noted)

www.irf.com

PD - 91645A

IRF7389

www.irf.com

Surface mounted on FR-4 board, t 10sec.

Parameter

Min. Typ. Max. Units

Conditions

N-Ch 30

= 0V, I

= 250µA

P-Ch -30

= 0V, I

= -250µA

N-Ch 0.022

Reference to 25°C, I

= 1mA

P-Ch 0.022

Reference to 25°C, I

= -1mA

0.023 0.029

= 10V, I

= 5.8A

0.032 0.046

= 4.5V, I

= 4.7A

0.042 0.058

= -10V, I

= -4.9A

0.076 0.098

= -4.5V, I

= -3.6A

N-Ch 1.0

= V

, I

= 250µA

P-Ch -1.0

= V

, I

= -250µA

N-Ch

= 15V, I

= 5.8A

P-Ch

7.7

= -15V, I

= -4.9A

N-Ch

1.0

= 24V, V

= 0V

P-Ch

-1.0

= -24V, V

= 0V

N-Ch

25V

= 24V, V

= 0V, T

= 55°C

P-Ch

-25V

= -24V, V

= 0V, T

= 55°C

GSS

Gate-to-Source Forward Leakage

N-P

±100

= ±20V

N-Ch

P-Ch

N-Ch

2.6 3.9

P-Ch

3.8 5.7

N-Ch

6.4 9.6

P-Ch

5.9 8.9

N-Ch

8.1

P-Ch

N-Ch

8.9

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

650

P-Ch

710

N-Ch

320

P-Ch

380

N-Ch

130

P-Ch

180

(BR)DSS

Drain-to-Source Breakdown Voltage

(BR)DSS

Breakdown Voltage Temp. Coefficient

DS(ON)

Static Drain-to-Source On-Resistance

GS(th)

Gate Threshold Voltage

Forward Transconductance

DSS

Drain-to-Source Leakage Current

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

d(on)

Turn-On Delay Time

Rise Time

d(off)

Turn-Off Delay Time

Fall Time

iss

Input Capacitance

oss

Output Capacitance

rss

Reverse Transfer Capacitance

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

V/°C

µA

N-Channel

= 5.8A, V

= 15V, V

= 10V

P-Channel

= -4.9A, V

= -15V, V

= -10V

N-Channel

= 15V, I

= 1.0A, R

= 6.0,

= 15

P-Channel

= -15V, I

= -1.0A, R

= 6.0,

= 15

N-Channel

= 0V, V

= 25V, = 1.0MHz

P-Channel

= 0V, V

= -25V, = 1.0MHz

N-Ch

P-Ch

Parameter

Min. Typ. Max. Units

Conditions

N-Ch

2.5

P-Ch

-2.5

N-Ch

P-Ch

-30

N-Ch 0.78 1.0

= 25°C, I

= 1.7A, V

= 0V

P-Ch -0.78 -1.0

= 25°C, I

= -1.7A, V

= 0V

N-Ch

4568

P-Ch

N-Ch

P-Ch

Source-Drain Ratings and Characteristics

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

N-Channel

= 25°C, I

=1.7A, di/dt = 100A/µs

P-Channel

= 25°C, I

= -1.7A, di/dt = 100A/µs

N-Channel I

4.0A, di/dt 74A/µs, V

(BR)DSS

, T

150°C

P-Channel I

-2.8A, di/dt 150A/µs, V

(BR)DSS

, T

150°C

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 22 )

Notes:

Pulse width 300µs; duty cycle 2%.

N-Channel

Starting T

= 25°C, L = 10mH R

= 25, I

= 4.0A. (See Figure 12)

P-Channel

Starting T

= 25°C, L = 35mH R

= 25, I

= -2.8A.

IRF7389

www.irf.com

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

N-Channel

100

0.1

20µs PULSE WIDTH
T = 25°C

V , Drain-to-Source Voltage (V)

3.0V

VGS

TOP 15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 3.0V

DI , D

r
a
i
n
-
to

-S

o
u
r
c
e
C

u
rre

n
t
(A

)

100

0.1

V , Drain-to-Source Voltage (V)

DI , D

r
a
i
n
-
to

-S

o
u
rc

e
C

u
rre

n
t
(A

)

20µs PULSE WIDTH
T = 150°C

3.0V

VGS

TOP 15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 3.0V

100

3.0

3.5

4.0

4.5

5.0

T = 25°C

T = 150°C

V , Gate-to-Source Voltage (V)

I
,

r
ai

t
o
-
S

our

ce C

u
r
r
ent

(

)

V = 10V
20µs PULSE WIDTH

100

0.4

0.6

0.8

1.0

1.2

1.4

1.6

T = 25°C

T = 150°C

V = 0V

V , Source-to-Drain Voltage (V)

I , R

e
v
e
rs

e
D

r
a
i
n
C

u
rre

n
t
(A

)

IRF7389

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Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig 6. Typical On-Resistance Vs. Drain

Current

Fig 7. Typical On-Resistance Vs. Gate

Voltage

N-Channel

(on)

,
Drain-to-Source

Resistance

(

)

(on)

,
Drain-to-Source

Resistance

(

)

-60 -40 -20

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

(
on)

I =

10V

5.8A

0.020

0.024

0.028

0.032

0.036

0.040

I , Drain Current (A)

V = 10V

V = 4.5V

0.00

0.02

0.04

0.06

0.08

0.10

0.12

V , Gate-to-Source Voltage (V)

I = 5.8A

120

160

200

100

125

150

i
ngl

e P

u
l
s
e A

v
al

anche E

nergy (m

Starting T , Junction Temperature (°C)

I
TOP 1.8A
3.2A
BOTTOM 4.0A

IRF7389

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

N-Channel

300

600

900

1200

100

,
Ca

c
i
t
a
n
c
e (

p
F)

V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C

GS
iss gs gd ds
rss gd
oss ds gd

iss

oss

rss

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

I =

5.8A

= 15V

0.1

100

0.00001

0.0001

0.001

0.01

0.1

100

Notes:

1. Duty factor D = t / t
2. Peak T = P

x Z

+ T

thJA

t , Rectangular Pulse Duration (sec)

Ther

a
l
R

e
sponse

)

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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