www.docs.chipfind.ru
Parameter
Symbol
Max.
Units
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
12
Continuous Drain or Source
25C
I
D
8.3
Current (V
GS
4.5V)
70C
6.6
A
Pulsed Drain Current
I
DM
66
Power Dissipation
25C
P
D
2.5
70C
1.6
Schottky and Body Diode
25C
I
F
(AV)
3.5
A
Average ForwardCurrent
70C
2.2
Junction & Storage Temperature Range
T
J
,
T
STG
55 to 150
C
Co-Pack N-channel HEXFET
Power MOSFET
and Schottky Diode
Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
FETKYTM MOSFET / SCHOTTKY DIODE
Absolute Maximum Ratings
Parameter
Max.
Units
Maximum Junction-to-Ambient
R
JA
50
C/W
Thermal Resistance
V
W
Description
The FETKY
TM
family of Co-Pack HEXFET
MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Top View
8
1
2
3
4
5
6
7
A/S
A/S
A/S
G
K/D
K/D
D
K/D
K/D
IRF7807D1
PD- 93761
www.irf.com
1
11/8/99
IRF7807D1
V
DS
30V
R
DS(on)
25m
Q
g
14nC
Q
sw
5.2nC
Q
oss
18.4nC
Device Features (Max Values)
SO-8
IRF7807D1
2
www.irf.com
Electrical Characteristics
Schottky Diode & Body Diode Ratings and Characteristics
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
300 s; duty cycle
2%.
When mounted on 1 inch square copper board, t < 10 sec.
50% Duty Cycle, Rectangular
*
Devices are 100% tested to these parameters.
Parameter
Min
Typ
Max
Units
Conditions
Diode Forward Voltage
V
SD
0.5
V
T
j
= 25C, I
s
= 1A, V
GS
=0V
0.39
T
j
= 125C, I
s
= 1A, V
GS
=0V
Reverse Recovery Time
trr
51
ns
T
j
= 25C, I
s
= 7.0A, V
DS
= 16V
Reverse Recovery Charge
Qrr
48
nC
di/dt = 100A/s
Forward Turn-On Time
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Parameter
Min
Typ
Max
Units
Conditions
Drain-to-Source
V
(BR)DSS
30
V
V
GS
= 0V, I
D
= 250A
Breakdown Voltage*
Static Drain-Source
R
DS
(on)
17
25
m
V
GS
= 4.5V, I
D
= 7A
on Resistance*
Gate Threshold Voltage* V
GS
(th)
1.0
V
V
DS
= V
GS
,I
D
= 250A
Drain-Source Leakage
I
DSS
90
A
V
DS
= 24V, V
GS
= 0V
Current*
7.2
mA
V
DS
= 24V, V
GS
= 0V,
T
j
= 125C
Gate-Source Leakage
I
GSS
+/- 100
nA
V
GS
= +/-12V
Current*
Total Gate Charge
Q
gsync
10.5
14
V
DS
<100mV,
Synch FET*
V
GS
= 5V, I
D
= 7A
Total Gate Charge
Q
gcont
12
17
V
DS
= 16V,
Control FET*
V
GS
= 5V, I
D
= 7A
Pre-Vth
Q
gs1
2.1
V
DS
= 16V, I
D
= 7A
Gate-Source Charge
Post-Vth
Q
gs2
0.76
nC
Gate-Source Charge
Gate to Drain Charge
Q
gd
2.9
Switch Charge*
Q
SW
3.66
5.2
(Q
gs2
+ Q
gd
)
Output Charge*
Q
oss
15.3
18.4
V
DS
= 16V, V
GS
= 0
Gate Resistance
R
g
1.2
IRF7807D1
www.irf.com
3
Fig 3. Typical Reverse Output Characteristics
Fig 4. Typical Reverse Output Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.1
1
10
VDS, Drain-to-Source Voltage (V)
1
10
100
I D
, Drain-to-Source Current ( A )
2.5V
VGS
TOP 4.5V
3.5V
3.0V
BOTTOM 2.5V
380s PULSE WIDTH
Tj = 25C
0.1
1
10
VDS, Drain-to-Source Voltage (V)
1
10
100
I D
, Drain-to-Source Current (A)
2.5V
VGS
TOP 4.5V
3.5V
3.0V
BOTTOM 2.5V
380s PULSE WIDTH
Tj = 150C
0
0.2
0.4
0.6
0.8
1
VSD, Source-to-Drain Voltage (V)
0
10
20
30
40
50
60
I S
, Source-to-Drain Current (A)
380s PULSE WIDTH
Tj = 25C
VGS
TOP 4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 0.0V
0.0V
0
0.2
0.4
0.6
0.8
1
VSD, Source-to-Drain Voltage (V)
0
10
20
30
40
50
60
70
I S
, Source-to-Drain Current (A)
380S PULSE WIDTH
Tj = 150C
VGS
TOP 4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 0.0V
0.0V
IRF7807D1
4
www.irf.com
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Typical Transfer Characteristics
1
10
100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
Fig 7. Normalized On-Resistance
Vs. Temperature
0
2
4
6
8
10
12
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
V
GS
, Gate-to-Source Voltage (V)
ID= 7.0A
VDS = 16V
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( C )
0.5
1.0
1.5
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
ID = 7.0A
VGS = 4.5V
2.5
3.0
3.5
VGS, Gate-to-Source Voltage (V)
1
10
100
I D
, Drain-to-Source Current
(
A)
TJ = 25C
TJ = 150C
VDS = 10V
380s PULSE WIDTH
IRF7807D1
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(
HEXFET
MOSFET
)
0.1
1
10
100
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 9. On-Resistance Vs. Gate Voltage
0
20
40
60
80
0.016
0.018
0.020
0.022
0.024
R , Drain-to-Source On Resistance
I , Drain Current (A)
D
DS (on)
VGS = 10V
VGS = 4.5V
Fig 10. On-Resistance Vs. Drain Current
( )
2.0
4.0
6.0
8.0
10.0
VGS, Gate -to -Source Voltage (V)
0.01
0.02
0.03
0.04
0.05
R
DS(on)
, Drain-to -Source On Resistance (
)
ID = 7.0A
PDF 
ZIP