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Parameter
Symbol
IRF7809A V
Units
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
12
Continuous Drain or Source
T
A
= 25C
I
D
13.3
Current (V
GS
4.5V)
T
L
= 90C
14.6
A
Pulsed Drain Current
I
DM
100
Power Dissipation
T
A
= 25C
P
D
2.5
W
T
L
= 90C
3.0
Junction & Storage Temperature Range
T
J
,
T
STG
55 to 150
C
Continuous Source Current (Body Diode)
I
S
2.5
A
Pulsed Source Current
I
SM
50
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7809AV has been optimized for all parameters
that are critical in synchronous buck converters including
R
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
The IRF7809AV offers particulary low R
DS(on)
and high
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter
Max.
Units
Maximum Junction-to-Ambient
R
JA
50
C/W
Maximum Junction-to-Lead
R
JL
20
C/W
Thermal Resistance
T o p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
PD-90010
IRF7809AV
SO-8
10/26/00
IRF7809AV
R
DS
(on)
7.0m
Q
G
41nC
Q
sw
14nC
Q
oss
30nC
DEVICE CHARACTERISTICS
IRF7809AV
2
www.irf.com
Parameter
Min
Typ
Max
Units
Conditions
Diode Forward
V
SD
1.3
V
I
S
= 15A
, V
GS
= 0V
Voltage*
Reverse Recovery
Q
rr
120
nC
di/dt
~
700A/s
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Reverse Recovery
Q
rr(s)
150
nC
di/dt = 700A/s
Charge (with Parallel
(with 10BQ040)
Schottky)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Parameter
Min
Typ
Max
Units
Conditions
Drain-to-Source
BV
DSS
30
V
V
GS
= 0V, I
D
= 250A
Breakdown Voltage
Static Drain-Source
R
DS(on)
7.0
9.0
m
V
GS
= 4.5V, I
D
= 15A
on Resistance
Gate Threshold Voltage
V
GS(th)
1.0
V
V
DS
= V
GS
,I
D
= 250A
Drain-Source Leakage
I
DSS
30
V
DS
= 24V, V
GS
= 0
Current*
150
A
V
DS
= 24V, V
GS
= 0,
Tj = 100C
Gate-Source Leakage
I
GSS
100
nA
V
GS
= 12V
Current*
Total Gate Chg Cont FET
Q
G
41
62
V
GS
=5V, I
D
=15A, V
DS
=20V
Total Gate Chg Sync FET
Q
G
36
54
V
GS
= 5V, V
DS
< 100mV
Pre-Vth
Q
GS1
7.0
V
DS
= 20V, I
D
= 15A
Gate-Source Charge
Post-Vth
Q
GS2
2.3
nC
Gate-Source Charge
Gate to Drain Charge
Q
GD
12
I
D
=15A, V
DS
=16V
Switch Chg(Q
gs2
+ Q
gd
)
Q
sw
14
21
Output Charge*
Q
oss
30
45
V
DS
= 16V, V
GS
= 0
Gate Resistance
R
G
1.5
Turn-on Delay Time
t
d (on)
14
V
DD
= 16V, I
D
= 15A
Rise Time
t
r
36
ns
V
GS
= 5V
Turn-off Delay Time
t
d
(off)
96
Clamped Inductive Load
Fall Time
t
f
10
Input Capacitance
C
iss
3780
Output Capacitance
C
oss
1060
pF
V
DS
= 16V, V
GS
= 0
Reverse Transfer Capacitance C
rss
130
Electrical Characteristics
Source-Drain Rating & Characteristics
Current
Charge
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
400 s; duty cycle
2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
oss
Typical values measured at V
GS
= 4.5V, I
F
= 15A.
IRF7809AV
www.irf.com
3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.5V
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.5V
10
100
1000
2.4
2.6
2.8
3.0
3.2
3.4
V = 15V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
15A
IRF7809AV
4
www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
0
1000
2000
3000
4000
5000
6000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0
10
20
30
40
50
60
70
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
15A
V
= 20V
DS
IRF7809AV
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
25
50
75
100
125
150
0
4
8
12
16
T , Case Temperature
( C)
I , Drain Current (A)
C
D
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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