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5/8/00
IRF820A
SMPS MOSFET
HEXFET
Power MOSFET
l
Switch Mode Power Supply (SMPS)
l
Uninterruptable Power Supply
l
High speed power switching
Benefits
Applications
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective C
OSS
specified (See AN 1001)
V
DSS
R
DS
(on) max
I
D
500V
3.0
2.5A
Typical SMPS Topologies:
l
Two transistor Forward
l
Half Bridge and Full Bridge
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
2.5
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
1.6
A
I
DM
Pulsed Drain Current
10
P
D
@T
C
= 25C
Power Dissipation
50
W
Linear Derating Factor
0.4
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
3.4
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm)
Absolute Maximum Ratings
S
D
G
PD- 93773A
Notes
through
are on page 8
TO-220AB
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Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
1.4
S
V
DS
= 50V, I
D
= 1.5A
Q
g
Total Gate Charge
17 I
D
= 2.5A
Q
gs
Gate-to-Source Charge
4.3
nC
V
DS
= 400V
Q
gd
Gate-to-Drain ("Miller") Charge
8.5
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
8.1
V
DD
= 250V
t
r
Rise Time
12
I
D
= 2.5A
t
d(off)
Turn-Off Delay Time
16
R
G
= 21
t
f
Fall Time
13
R
D
= 97
,See Fig. 10
C
iss
Input Capacitance
340
V
GS
= 0V
C
oss
Output Capacitance
53
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
2.7
pF
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
490
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
15
V
GS
= 0V, V
DS
= 400V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
28
V
GS
= 0V, V
DS
= 0V to 400V
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
140
mJ
I
AR
Avalanche Current
2.5
A
E
AR
Repetitive Avalanche Energy
5.0
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.6
V
T
J
= 25C, I
S
= 2.5A, V
GS
= 0V
t
rr
Reverse Recovery Time
330
500
ns
T
J
= 25C, I
F
= 2.5A
Q
rr
Reverse RecoveryCharge
760 1140
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
2.5
10
A
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
2.5
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
500
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.60 V/C Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
3.0
V
GS
= 10V, I
D
= 1.5A
V
GS(th)
Gate Threshold Voltage
2.0
4.5
V
V
DS
= V
GS
, I
D
= 250A
25
A
V
DS
= 500V, V
GS
= 0V
250
V
DS
= 400V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -30V
I
GSS
I
DSS
Drain-to-Source Leakage Current
IRF820A
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.01
0.1
1
10
4.0
5.0
6.0
7.0
8.0
9.0
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
2.5A
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
0.1
1
10
100
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0
4
8
12
16
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
2.5A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
IRF820A
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5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Case Temperature
( C)
I , Drain Current (A)
C
D
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(B R )D SS
I
A S
R G
I
A S
0 .0 1
tp
D .U .T
L
V D S
+
-
VD D
D R IV E R
A
1 5 V
2 0 V
25
50
75
100
125
150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
1.1A
1.6A
2.5A
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
0.0
0.5
1.0
1.5
2.0
2.5
IAV , Avalanche Current ( A)
550
600
650
700
V
DSav
, Avalanche Voltage ( V )
IRF820A
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7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel
HEXFET
Power MOSFETs
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
IRF820A
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L E AD AS SIG NME NT S
1 - GA TE
2 - DR A IN
3 - S OU RC E
4 - DR A IN
- B -
1.3 2 (.0 52 )
1.2 2 (.0 48 )
3 X
0.5 5 (.02 2)
0.4 6 (.01 8)
2 .9 2 (.115 )
2 .6 4 (.104 )
4.69 (.18 5 )
4.20 (.16 5 )
3X
0 .93 (.03 7)
0 .69 (.02 7)
4 .06 (.16 0)
3 .55 (.14 0)
1 .1 5 (.0 4 5)
MIN
6 .4 7 (.255 )
6 .1 0 (.240 )
3.7 8 (.1 49 )
3.5 4 (.1 39 )
- A -
10 .5 4 (.415 )
10 .2 9 (.405 )
2 .8 7 (.1 13 )
2 .6 2 (.1 03 )
1 5 .2 4 (.6 00 )
1 4 .8 4 (.5 84 )
14 .09 (.55 5)
13 .47 (.53 0)
3X
1 .40 (.05 5)
1 .15 (.04 5)
2 .54 (.1 00 )
2 X
0 .36 (.0 14 ) M B A M
4
1 2 3
N OTE S :
1 DIMEN SIO NING & TO LE RA NC ING P E R AN SI Y 14 .5 M, 1 9 82. 3 O UTL INE CON F OR MS TO JED EC OUT LIN E T O-2 2 0A B.
2 CO NT ROL LING DIM EN SIO N : INC H 4 HE AT SIN K & L E AD ME A SU RE ME NT S D O NO T INC LU DE B U RRS .
Part Marking Information
TO-220AB
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
P A R T N U M B E R
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y
L O T C O D E 9 B 1 M
A S S E M B L Y
L O T C O D E
D A T E C O D E
(Y Y W W )
Y Y = Y E A R
W W = W E E K
9 2 4 6
IR F 1 0 1 0
9 B 1 M
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
2.5A, di/dt
270A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
Starting T
J
= 25C, L = 45mH
R
G
= 25
, I
AS
= 2.5A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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8000
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Data and specifications subject to change without notice. 5/00
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