IRFL4310
HEXFET
Power MOSFET
PD - 91368B
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.20W
I
D
= 1.6A
5/11/99
Description
l Surface Mount
l Dynamic dv/dt Rating
l Fast Switching
l Ease of Paralleling
l Advanced Process Technology
l Ultra Low On-Resistance
SOT-223
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Absolute Maximum Ratings
www.irf.com
1
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
Parameter
Typ.
Max.
Units
R
qJA
Junction-to-Amb. (PCB Mount, steady state)*
93
120
R
qJA
Junction-to-Amb. (PCB Mount, steady state)**
48
60
Thermal Resistance
C/W
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V**
2.2
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V*
1.6
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V*
1.3
I
DM
Pulsed Drain Current
13
P
D
@T
A
= 25C
Power Dissipation (PCB Mount)**
2.1
W
P
D
@T
A
= 25C
Power Dissipation (PCB Mount)*
1.0
W
Linear Derating Factor (PCB Mount)*
8.3
mW/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
47
mJ
I
AR
Avalanche Current
1.6
A
E
AR
Repetitive Avalanche Energy*
0.10
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
A
IRFL4310
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
V
V
GS
= 0V, I
D
= 250A
DV
(BR)DSS
/DT
J
Breakdown Voltage Temp. Coefficient
0.12
V/C Reference to 25C, I
D
= 1mA
0.20
W
V
GS
= 10V, I
D
= 1.6A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
1.5
S
V
DS
= 50V, I
D
= 0.80 A
25
A
V
DS
= 100V, V
GS
= 0V
250
V
DS
= 80V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
17
25
I
D
= 1.6A
Q
gs
Gate-to-Source Charge
2.1
3.1
nC
V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge
7.8
12
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.8
V
DD
= 50V
t
r
Rise Time
18
ns
I
D
= 1.6A
t
d(off)
Turn-Off Delay Time
34
R
G
= 6.2 W
t
f
Fall Time 20 R
D
= 31 W, See Fig. 10
C
iss
Input Capacitance
330
V
GS
= 0V
C
oss
Output Capacitance
92
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
54
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
1.6A, di/dt 340A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
V
DD
= 25V, starting T
J
= 25C, L = 9.2 mH
R
G
= 25W, I
AS
= 3.2A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 1.6A, V
GS
= 0V
t
rr
Reverse Recovery Time
72
110
ns
T
J
= 25C, I
F
= 1.6A
Q
rr
Reverse RecoveryCharge
210 320
nC
di/dt = 100A/s
13
0.91
A
Source-Drain Ratings and Characteristics
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