IRFR/U6215
PRELIMINARY
HEXFET
Power MOSFET
V
DSS
= -150V
R
DS(on)
= 0.295
I
D
= -13A
Description
5/11/98
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
-13
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
-9.0
A
I
DM
Pulsed Drain Current
-44
P
D
@T
C
= 25C
Power Dissipation
110
W
Linear Derating Factor
0.71
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
310
mJ
I
AR
Avalanche Current
-6.6
A
E
AR
Repetitive Avalanche Energy
11
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.4
R
JA
Junction-to-Ambient (PCB mount) **
50
C/W
R
JA
Junction-to-Ambient
110
Thermal Resistance
D -P A K
T O -252 A A
I-P A K
T O -25 1A A
l
P-Channel
l
175C Operating Temperature
l
Surface Mount (IRFR6215)
l
Straight Lead (IRFU6215)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91749
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1
S
D
G
IRFR/U6215
2
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Parameter
Min.
Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-150
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.20
V/C
Reference to 25C, I
D
= -1mA
0.295
V
GS
= -10V, I
D
= -6.6A
0.58
V
GS
= -10V, I
D
= -6.6A
T
J
= 150C
V
GS(th)
Gate Threshold Voltage
-2.0
-4.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
3.6
S
V
DS
= -50V, I
D
= -6.6A
-25
A
V
DS
= -150V, V
GS
= 0V
-250
V
DS
= -120V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
66
I
D
= -6.6A
Q
gs
Gate-to-Source Charge
8.1
nC
V
DS
= -120V
Q
gd
Gate-to-Drain ("Miller") Charge
35
V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
14
V
DD
= -75V
t
r
Rise Time
36
ns
I
D
= -6.6A
t
d(off)
Turn-Off Delay Time
53
R
G
= 6.8
t
f
Fall Time
37
R
D
= 12
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
860
V
GS
= 0V
C
oss
Output Capacitance
220
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
130
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
nH
I
GSS
L
S
Internal Source Inductance
7.5
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance
4.5
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.6
V
T
J
= 25C, I
S
= -6.6A, V
GS
= 0V
t
rr
Reverse Recovery Time
160
240
ns
T
J
= 25C, I
F
= -6.6A
Q
rr
Reverse RecoveryCharge
1.2
1.7
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
-13
-44
Notes:
Starting T
J
= 25C, L = 14mH
R
G
= 25
, I
AS
= -6.6A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material )
For recommended footprint and soldering techniques refer to application note #AN-994
I
SD
-6.6A, di/dt
-620A/s, V
DD
V
(BR)DSS
,
T
J
175C
Uses IRF6215 data and test conditions
Pulse width
300s; duty cycle
2%
This is applied for I-PAK, L
S
of D-PAK is measured between lead and
center of die contact
S
D
G
S
D
G
IRFR/U6215
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3
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1
1 0
1 0 0
1
1 0
1 0 0
D
D S
20 s P U L S E W ID T H
T = 25 C
c
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , D rain-to-S o urce V oltage (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4 .5 V
1
1 0
1 0 0
1
1 0
1 0 0
D
D S
A
-
I
,
Dr
ai
n
-
t
o
-
S
ou
r
c
e Cur
r
e
n
t
(
A
)
-V , D rain-to-S ource V oltage (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4 .5V
2 0 s P U LS E W ID T H
T = 1 75 C
C
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 2 5 C
J
G S
D
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , G a te -to -S o u rc e V o lta g e (V )
T = 1 7 5 C
J
V = -5 0 V
2 0 s P U L S E W ID T H
D S
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Junction T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
ta
n
c
e
D
S
(
on)
(N
o
r
m
a
l
i
z
e
d
)
A
V = -1 0V
G S
I = -11 A
D
IRFR/U6215
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
1 2
1 6
2 0
0
2 0
4 0
6 0
8 0
G
GS
A
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Q , Total G ate C harge (nC )
F O R T E S T C IR C U IT
S E E F IG U R E 1 3
I = -6 .6 A
V = -12 0V
V = -75 V
V = -30 V
D
D S
D S
D S
0 . 1
1
1 0
1 0 0
0 . 2
0 . 6
1 . 0
1 . 4
1 . 8
T = 2 5C
J
V = 0 V
G S
S D
SD
A
-
I
,
Rev
er
s
e
D
r
a
i
n Cur
r
e
n
t
(
A
)
-V , S ourc e -to-D rain V oltag e (V )
T = 17 5 C
J
1
1 0
1 0 0
1
1 0
1 0 0
1 0 0 0
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n)
1 0 m s
A
-I
,
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , D rain-to-S ourc e V olta ge (V )
D S
D
1 0 s
1 0 0 s
1 m s
T = 25 C
T = 17 5C
S ing le P u ls e
C
J
0
4 0 0
8 0 0
1 2 0 0
1 6 0 0
2 0 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
A
D S
-V , D rain-to-S ourc e V oltage (V )
V = 0V , f = 1M H z
C = C + C , C S H O R T E D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
is s
C
os s
C
rs s
IRFR/U6215
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5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
DS
-10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
0 . 0 1
0 . 1
1
1 0
0 . 0 0 0 0 1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
1
t , R e cta n g u la r P uls e D u ratio n (se c )
1
th
J
C
D = 0 .5 0
0 .0 1
0 .0 2
0 .0 5
0 .1 0
0 .2 0
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
A
T
her
m
a
l
R
e
s
pons
e (
Z
)
P
t
2
1
t
D M
N o te s :
1 . D u ty f ac to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
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