IRFR/U9024N
PRELIMINARY
HEXFET
Power MOSFET
6/26/97
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
3.3
R
JA
Junction-to-Ambient (PCB mount)**
50
C/W
R
JA
Junction-to-Ambient
110
Thermal Resistance
D - P a k
T O - 2 52 A A
I- P a k
TO - 2 5 1 A A
l
Ultra Low On-Resistance
l
P-Channel
l
Surface Mount (IRFR9024N)
l
Straight Lead (IRFU9024N)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ -10V
-11
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ -10V
-8
A
I
DM
Pulsed Drain Current
-44
P
D
@T
C
= 25C
Power Dissipation
38
W
Linear Derating Factor
0.30
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
62
mJ
I
AR
Avalanche Current
-6.6
A
E
AR
Repetitive Avalanche Energy
3.8
mJ
dv/dt
Peak Diode Recovery dv/dt
-10
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 9.1506
V
DSS
= -55V
R
DS(on)
= 0.175
I
D
= -11A
S
D
G
IRFR/U9024N
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.6
V
T
J
= 25C, I
S
= -7.2A, V
GS
= 0V
t
rr
Reverse Recovery Time
47
71
ns
T
J
= 25C, I
F
= -7.2A
Q
rr
Reverse Recovery Charge
84
130
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
-11
-44
A
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
Starting T
J
= 25C, L = 2.8mH
R
G
= 25
, I
AS
= -6.6A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-6.6A, di/dt
240A/s, V
DD
V
(BR)DSS
,
T
J
150C
Pulse width
300s; duty cycle
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.05
V/C
Reference to 25C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.175
V
GS
= -10V, I
D
= -6.6A
V
GS(th)
Gate Threshold Voltage
-2.0
-4.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
2.5
S
V
DS
= -25V, I
D
= -7.2A
-25
A
V
DS
= -55V, V
GS
= 0V
-250
V
DS
= -44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
19
I
D
= -7.2A
Q
gs
Gate-to-Source Charge
5.1
nC
V
DS
= -44V
Q
gd
Gate-to-Drain ("Miller") Charge
10
V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
13
V
DD
= -28V
t
r
Rise Time
55
I
D
= -7.2A
t
d(off)
Turn-Off Delay Time
23
R
G
= 24
t
f
Fall Time
37
R
D
= 3.7
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
350
V
GS
= 0V
C
oss
Output Capacitance
170
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
92
= 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Uses IRF9Z24N data and test conditions.
IRFR/U9024N
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-10V
-11A
0.1
1
10
100
4
5
6
7
8
9
10
V = -25V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 150 C
J
T = 25 C
J
IRFR/U9024N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2
0.6
0.9
1.3
1.6
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
0.1
1
10
100
1000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
1
1 0
1 0 0
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , Drai n-to -So urce V oltag e (V)
A
V = 0V , f = 1MH z
C = C + C , C SH OR TED
C = C
C = C + C
G S
is s gs g d ds
rs s g d
os s ds gd
C
is s
C
o s s
C
rs s
0
4
8
1 2
1 6
2 0
0
5
1 0
1 5
2 0
2 5
G
GS
A
-
V
,
G
a
t
e
-
t
o
-
S
our
c
e
V
o
l
t
age (
V
)
Q , To tal G ate C ha rg e (n C)
FOR TE ST C IR C U IT
SE E FIG U R E 1 3
I = -7 .2A
V = -44 V
V = -28 V
D
DS
DS
IRFR/U9024N
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
DS
-10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25
50
75
100
125
150
0.0
3.0
6.0
9.0
12.0
T , Case Temperature
( C)
-I , Drain Current (A)
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFR/U9024N
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T.
V
DS
I
D
I
G
-3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
( B R ) D S S
I
AS
R G
IA S
0 .0 1
t p
D .U .T
L
V D S
VD D
D R IV E R
A
15V
- 20V
-
+
V
DD
25
50
75
100
125
150
0
20
40
60
80
100
120
Starting T , Junction Temperature
( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
-3.0A
-4.2A
-6.6A
IRFR/U9024N
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Reverse Polarity of D.U.T for P-Channel
V
GS
[ ]
[ ]
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
IRFR/U9024N
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
TO-252AA (D-Pak)
Part Marking Information
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
6.22 (.245)
5.97 (.235)
- B -
3X
0.89 (.035)
0.64 (.025)
0.25 ( .010) M A M B
4.57 (.180)
2.28 (.090)
2X
1.14 (.045)
0.76 (.030)
1.52 (.060)
1.15 (.045)
1.02 (.040)
1.64 (.025)
5.46 (.215)
5.21 (.205)
1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
MIN.
0.58 (.023)
0.46 (.018)
LEA D AS SIG NME NT S
1 - G AT E
2 - DRA IN
3 - S OUR CE
4 - DRA IN
10.42 (.410)
9.40 (.370)
NOT ES:
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982.
2 CO NTRO LLING DIMENS ION : INCH.
3 CO NFO RMS T O JEDE C O UTLINE TO -252AA .
4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP ,
SO LDER DIP MA X. +0.16 (.006).
IN T E R N A T IO N A L
R E CT IF IE R
L O G O
A S S E MB L Y
L O T C OD E
E X A M P L E : T H IS IS A N IR F R 1 2 0
W IT H A S S E MB L Y
L OT C OD E 9 U 1P
F IR S T P O R T ION
OF P A R T N U MB E R
S E C O N D P O R T ION
O F P A R T N U M B E R
12 0
IR F R
9 U 1P
A
IRFR/U9024N
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
TO-251AA (I-Pak)
Part Marking Information
IN TE RN A T IO N A L
R E C T IF IE R
L O GO
A S S E M B LY
L O T C O D E
F IR S T P O RT IO N
O F P A R T N UM B E R
S E C O N D P O R T ION
O F P A R T N U M B E R
1 2 0
9 U 1 P
E X A M P L E : TH IS IS A N IR F U1 20
W IT H A S S E M B L Y
L O T C O D E 9 U 1P
IR F U
6.73 (.265)
6.35 (.250)
- A -
6.22 ( .245)
5.97 ( .235)
- B -
3X
0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
2.28 (.090)
1.14 (.045)
0.76 (.030)
5.46 (.215)
5.21 (.205)
1.27 ( .050)
0.88 ( .035)
2.38 (.094)
2.19 (.086)
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
LEAD AS SIG NMENT S
1 - G AT E
2 - DRA IN
3 - S OURCE
4 - DRA IN
NOT ES :
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y14.5M, 1982.
2 CO NTRO LLIN G DIMENS ION : INCH.
3 CO NFO RMS TO J EDE C O UT LINE TO -252AA .
4 DIME NSIO NS SHOW N A RE BEF O RE SO LDER DIP ,
SO LDER DIP MA X. +0.16 (.006).
9.65 (.380)
8.89 (.350)
2X
3X
2.28 (.090)
1.91 (.075)
1.52 ( .060)
1.15 ( .045)
4
1 2 3
6.45 (.245)
5.68 (.224)
0.58 (.023)
0.46 (.018)
IRFR/U9024N
Tape & Reel Information
TO-252AA
T R
16 .3 ( .64 1 )
15 .7 ( .61 9 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
1 2 .1 ( .4 76 )
1 1 .9 ( .4 69 )
F E E D D IR E C TIO N
F E E D D IR E C TIO N
1 6 .3 ( .6 4 1 )
1 5 .7 ( .6 1 9 )
T R R
T R L
N O T E S :
1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N FO R M S TO E IA - 48 1 & E IA - 5 4 1 .
N O T E S :
1 . O U T L IN E C O N F O R M S T O E IA - 4 8 1 .
1 6 m m
1 3 IN C H
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
6/97
PDF 
ZIP