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Электронный компонент: IRG4P254S

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Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
250
V
I
C
@ T
C
= 25C
Continuous Collector Current
98*
I
C
@ T
C
= 100C
Continuous Collector Current
55
A
I
CM
Pulsed Collector Current
Q
196
I
LM
Clamped Inductive Load Current
R
196
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
S
160
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
200
P
D
@ T
C
= 100C
Maximum Power Dissipation
78
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )
C
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
IRG4P254S
INSULATED GATE BIPOLAR TRANSISTOR
PD -91591A
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.64
R
CS
Case-to-Sink, Flat, Greased Surface
0.24
C/W
R
JA
Junction-to-Ambient, typical socket mount
40
Wt
Weight
6.0 (0.21)
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
E
C
G
n-channel
TO-247AC
Features
Features
Features
Features
Features
Standard: Optimized for minimum saturation
voltage and operating frequencies up to 10kHz
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
High Power density
Lower conduction losses than similarly rated MOSFET
Lower Gate Charge than equivalent MOSFET
Simple Gate Drive characteristics compared to Thyristors
Benefits
V
CES
= 250V
V
CE(on) typ.
=
1.32V
@V
GE
= 15V, I
C
= 55A
4/15/2000
Standard Speed IGBT
*
Package limited to 70A
www.irf.com
1
IRG4P254S
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
200
300
I
C
=55A
Q
ge
Gate - Emitter Charge (turn-on)
--
29
44
nC
V
CC
= 200V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
--
66
99
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
40
--
t
r
Rise Time
--
44
--
T
J
= 25C
t
d(off)
Turn-Off Delay Time
--
270
400
I
C
= 55A, V
CC
= 200V
t
f
Fall Time
--
510
760
V
GE
= 15V, R
G
= 5.0
E
on
Turn-On Switching Loss
--
0.38
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
3.50
--
mJ
See Fig. 9, 10, 14
E
ts
Total Switching Loss
--
3.88
5.3
t
d(on)
Turn-On Delay Time
--
38
--
T
J
= 150C,
t
r
Rise Time
--
45
--
I
C
= 55A, V
CC
= 200V
t
d(off)
Turn-Off Delay Time
--
400
--
V
GE
= 15V, R
G
= 5.0
t
f
Fall Time
--
940
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
6.52
--
mJ
See Fig. 11, 14
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
4500
--
V
GE
= 0V
C
oes
Output Capacitance
--
510
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
100
--
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
250
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
T
18
--
--
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.33
--
V/C
V
GE
= 0V, I
C
= 1.0mA
--
1.32
1.5
I
C
= 55A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
--
1.69
--
I
C
=98A
See Fig.2, 5
--
1.31
--
I
C
=55A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-12
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
U
43
63
--
S
V
CE
=
100V, I
C
= 55A
--
--
250
V
GE
= 0V, V
CE
= 250V
--
--
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25C
--
--
1000
V
GE
= 0V, V
CE
= 250V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
A
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
T
Pulse width
80s; duty factor
0.1%.
U
Pulse width 5.0s, single shot.
Notes:
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10H, R
G
= 5.0
,
(See fig. 13a)
S
Repetitive rating; pulse width limited by maximum
junction temperature.
IRG4P254S
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3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
5
6
7
8
9
10
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
o
T = 150 C
J
o
0
20
40
60
80
100
120
0.1
1
10
100
f, Frequency (kHz)
A
6 0 % o f ra t e d
volt a ge
I
Ide a l d io de s
S q ua re w ave:
F o r b o th :
D uty cycle : 5 0%
T = 125 C
T = 90C
G ate drive as s pe cified
s in k
J
P ow e r D is s ip a t ion = 4 0 W
T riangu lar wave :
I
C lam p vo lt a g e :
8 0 % o f ra t e d
Load Current ( A )
1
10
100
1000
0.1
1
10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
o
T = 150 C
J
o
IRG4P254S
4
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
25
50
75
100
125
150
0
20
40
60
80
100
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
27.5
C
I = A
55
C
I = A
110
C
CURRENT LIMITED BY THE PACKAGE
IRG4P254S
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5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
R
G
, Gate Resistance
( )
1
10
100
0
2000
4000
6000
8000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
0
40
80
120
160
200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 200V
I
= 55A
CC
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = 5Ohm
V = 15V
V = 200V
G
GE
CC
I = A
110
C
I = A
55
C
I = A
27.5
C
0
10
20
30
40
50
3.0
4.0
5.0
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 200V
V = 15V
T = 25 C
I = 55A
CC
GE
J
C
R
G
, Gate Resistance
( )
5.0