IRG4PC50FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
E
G
n-c ha nn el
C
V
CES
= 600V
V
CE(on) typ.
=
1.45V
@V
GE
= 15V, I
C
= 39A
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
------
------
0.64
R
JC
Junction-to-Case - Diode
------
------
0.83
C/W
R
CS
Case-to-Sink, flat, greased surface
------
0.24
------
R
JA
Junction-to-Ambient, typical socket mount
-----
-----
40
Wt
Weight
------
6 (0.21)
------
g (oz)
Thermal Resistance
Fast CoPack IGBT
12/30/00
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
70
I
C
@ T
C
= 100C
Continuous Collector Current
39
I
CM
Pulsed Collector Current
Q
280
A
I
LM
Clamped Inductive Load Current
R
280
I
F
@ T
C
= 100C
Diode Continuous Forward Current
25
I
FM
Diode Maximum Forward Current
280
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
200
P
D
@ T
C
= 100C
Maximum Power Dissipation
78
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbfin (1.1 Nm)
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Benefits
Generation -4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
PD 91469B
W
TO-247AC
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1
IRG4PC50FD
2
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Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
----
190
290
I
C
= 39A
Qge
Gate - Emitter Charge (turn-on)
----
28
42
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
----
65
97
V
GE
= 15V
t
d(on)
Turn-On Delay Time
----
55
----
T
J
= 25C
t
r
Rise Time
----
25
----
ns
I
C
= 39A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
----
240
360
V
GE
= 15V, R
G
= 5.0
t
f
Fall Time
----
140
210
Energy losses include "tail" and
E
on
Turn-On Switching Loss
----
1.5
----
diode reverse recovery.
E
off
Turn-Off Switching Loss
----
2.4
----
mJ
See Fig. 9, 10, 11, 18
E
ts
Total Switching Loss
----
3.9
5.0
t
d(on)
Turn-On Delay Time
----
59
----
T
J
= 150C, See Fig. 9, 10, 11, 18
t
r
Rise Time
----
27
----
ns
I
C
= 39A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
----
400
----
V
GE
= 15V, R
G
= 5.0
t
f
Fall Time
----
260
----
Energy losses include "tail" and
E
ts
Total Switching Loss
----
6.5
----
mJ
diode reverse recovery.
L
E
Internal Emitter Inductance
----
13
----
nH
Measured 5mm from package
C
ies
Input Capacitance
----
4100
----
V
GE
= 0V
C
oes
Output Capacitance
----
250
----
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
----
49
----
= 1.0MHz
t
rr
Diode Reverse Recovery Time
----
50
75
ns
T
J
= 25C See Fig.
----
105
160
T
J
= 125C 14 I
F
= 25A
I
rr
Diode Peak Reverse Recovery Current
----
4.5
10
A
T
J
= 25C See Fig.
----
8.0
15
T
J
= 125C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
----
112
375
nC
T
J
= 25C See Fig.
----
420 1200
T
J
= 125C 16 di/dt 200A/s
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
----
250
----
A/s
T
J
= 25C See Fig.
During t
b
----
160
----
T
J
= 125C 17
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
S
600
----
----
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
----
0.62
----
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
----
1.45
1.6
I
C
= 39A
V
GE
= 15V
----
1.79
----
V
I
C
= 70A
See Fig. 2, 5
----
1.53
----
I
C
= 39A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
----
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage ----
-14
---- mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
T
21
30
----
S
V
CE
= 100V, I
C
= 39A
I
CES
Zero Gate Voltage Collector Current
----
----
250
A
V
GE
= 0V, V
CE
= 600V
----
----
6500
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
----
1.3
1.7
V
I
C
= 25A
See Fig. 13
----
1.2
1.5
I
C
= 25A, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
----
----
100
n A
V
GE
= 20V
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
IRG4PC50FD
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3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Load Current ( A )
0
1 0
2 0
3 0
4 0
5 0
0 . 1
1
1 0
1 0 0
f, Frequenc y (k Hz)
A
6 0% of r ate d
vo lt a g e
D u ty c yc le: 50 %
T = 1 25C
T = 9 0 C
G a te drive as spe cifie d
T urn-on loss es includ e
e ffects of reverse re c overy
sink
J
Po w e r D is s ip a tio n = 4 0 W
1
1 0
1 0 0
1 0 0 0
0.1
1
1 0
C E
C
I
,
C
o
l
l
e
c
to
r-to
-
E
m
i
t
te
r C
u
rr
e
n
t
(
A
)
V , C o lle c to r-to -E m itte r V o lta g e (V )
T = 1 5 0 C
T = 2 5 C
J
J
V = 1 5 V
2 0 s P U L S E W ID T H
G E
A
1
1 0
1 0 0
1 0 0 0
5
6
7
8
9
1 0
1 1
1 2
C
I
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
te
r
C
u
r
r
e
n
t
(
A
)
G E
T = 2 5C
T = 1 50 C
J
J
V , G a te -to -E m itte r V o lta g e (V )
A
V = 5 0 V
5 s P U L S E W ID TH
CC
IRG4PC50FD
4
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Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
1 . 0
1 . 5
2 . 0
2 . 5
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
CE
V
,
C
o
l
l
e
c
t
o
r-t
o
-
E
m
i
t
t
e
r V
o
l
t
a
g
e
(
V
)
V = 1 5V
8 0 s P U L S E W ID TH
G E
A
T , Ju n c tio n Te m p e ra tu re (C )
J
I = 78 A
I = 39 A
I = 2 0 A
C
C
C
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
M
a
x
i
m
u
m
D
C
C
o
l
l
e
c
t
o
r
C
u
rre
n
t
(A
)
T , C ase Tem perature (C)
C
V = 15 V
G E
0 .0 1
0 .1
1
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
1 0
t , R ectangular P ulse D uration (sec)
1
th
J
C
D = 0 .5 0
0 .0 1
0 .0 2
0 .0 5
0 .1 0
0 .2 0
S IN G L E P U L S E
( T H E R M A L R E S P O N S E )
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
P
t
2
1
t
D M
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
IRG4PC50FD
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5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Total Switchig Losses (mJ)
Total Switchig Losses (mJ)
3 . 5 0
4 . 0 0
4 . 5 0
5 . 0 0
0
1 0
2 0
3 0
4 0
5 0
6 0
G
A
R , G ate Resistance (
)
V = 480V
V = 15V
T = 25C
I = 39A
C C
G E
J
C
1
1 0
1 0 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
A
T , Junction Tem perature (C)
J
I = 20A
I = 39A
I = 78A
R = 5.0
V = 15V
V = 480V
G
G E
C C
C
C
C
0
4
8
1 2
1 6
2 0
0
4 0
8 0
1 2 0
1 6 0
2 0 0
GE
V
,
G
a
t
e
-
t
o
-
E
m
i
tte
r
V
o
l
t
a
g
e
(
V
)
g
Q , To ta l G a te C h a rg e ( n C )
A
V = 4 0 0 V
I = 3 9 A
CE
C
0
2 0 0 0
4 0 0 0
6 0 0 0
8 0 0 0
1
1 0
1 0 0
C E
C, Capacitance (pF)
V , Collector-to-Emitter Voltage (V)
A
C
ies
C
res
C
oes
V
GE
= 0V f = 1 MHz
Cies = Cge + Cgc + Cce SHORTED
Cres = Cce
Coes = Cce + Cgc
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