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C-897
IRGBC20KD2
Short Circuit Rated
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Short circuit rated -10s @125C, V
GE
= 15V
Switching-loss rating includes all "tail" losses
HEXFRED
TM
soft ultrafast diodes
Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
E
G
n-channel
C
V
CES
= 600V
V
CE(sat)
3.5V
@V
GE
= 15V, I
C
= 6.0A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
--
--
2.1
R
JC
Junction-to-Case - Diode
--
--
3.5
C/W
R
CS
Case-to-Sink, flat, greased surface
--
0.50
--
R
JA
Junction-to-Ambient, typical socket mount
--
--
80
Wt
Weight
--
2 (0.07)
--
g (oz)
PD - 9.1105
TO-220AB
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
10
I
C
@ T
C
= 100C
Continuous Collector Current
6.0
I
CM
Pulsed Collector Current
20
A
I
LM
Clamped Inductive Load Current
20
I
F
@ T
C
= 100C
Diode Continuous Forward Current
7.0
I
FM
Diode Maximum Forward Current
20
t
sc
Short Circuit Withstand Time
10
s
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
60
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
24
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbfin (1.1 Nm)
Absolute Maximum Ratings
Revision 2
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C-898
IRGBC20KD2
Repetitive rating; V
GE
=20V, pulse width limited
by max. junction temperature. ( See fig. 20 )
Notes:
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temp. Coeff. of Breakdown Voltage
--
0.37
--
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.4
3.5
I
C
= 6.0A
V
GE
= 15V
--
3.6
--
V
I
C
= 10A
See Fig. 2, 5
--
2.8
--
I
C
= 6.0A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
5.5
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-11
-- mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
1.9
3.3
--
S
V
CE
= 100V, I
C
= 6.0A
I
CES
Zero Gate Voltage Collector Current
--
--
250
A
V
GE
= 0V, V
CE
= 600V
--
--
1700
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
--
1.4
1.7
V
I
C
= 8.0A
See Fig. 13
--
1.4
1.7
I
C
= 8.0A, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
17
26
I
C
= 6.0A
Qge
Gate - Emitter Charge (turn-on)
--
4.3
6.8
nC
V
CC
= 480V
Q
gc
Gate - Collector Charge (turn-on)
--
6.4
11
See Fig. 8
t
d(on)
Turn-On Delay Time
--
59
--
T
J
= 25C
t
r
Rise Time
--
38
--
ns
I
C
= 6.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
110
210
V
GE
= 15V, R
G
= 50
t
f
Fall Time
--
80
120
Energy losses include "tail" and
E
on
Turn-On Switching Loss
--
0.28
--
diode reverse recovery.
E
off
Turn-Off Switching Loss
--
0.15
--
mJ
See Fig. 9, 10, 11, 18
E
ts
Total Switching Loss
--
0.43 0.90
t
sc
Short Circuit Withstand Time
10
--
--
s
V
CC
= 360V, T
J
= 125C
V
GE
= 15V, R
G
= 50
, V
CPK
< 500V
t
d(on)
Turn-On Delay Time
--
52
--
T
J
= 150C, See Fig. 9, 10, 11, 18
t
r
Rise Time
--
35
--
ns
I
C
= 6.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
170
--
V
GE
= 15V, R
G
= 50
t
f
Fall Time
--
170
--
Energy losses include "tail" and
E
ts
Total Switching Loss
--
0.7
--
mJ
diode reverse recovery.
L
E
Internal Emitter Inductance
--
7.5
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
350
--
V
GE
= 0V
C
oes
Output Capacitance
--
50
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
4.7
--
= 1.0MHz
t
rr
Diode Reverse Recovery Time
--
37
55
ns
T
J
= 25C See Fig.
--
55
90
T
J
= 125C 14 I
F
= 8.0A
I
rr
Diode Peak Reverse Recovery Current
--
3.5
5.0
A
T
J
= 25C See Fig.
--
4.5
8.0
T
J
= 125C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
--
65
138
nC
T
J
= 25C See Fig.
--
124
360
T
J
= 125C 16 di/dt = 200A/s
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
--
240
--
A/s
T
J
= 25C See Fig.
During t
b
--
210
--
T
J
= 125C 17
Pulse width
80s; duty factor
0.1%.
Pulse width 5.0s,
single shot.
V
CC
=80%(V
CES
), V
GE
=20V, L=10H,
R
G
= 50
, ( See fig. 19 )
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C-899
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRGBC20KD2
0
2
4
6
8
0 .1
1
1 0
1 0 0
L
O
A
D
C
U
R
R
E
N
T
(
A
)
f, F re quency (kH z)
6 0 % o f ra te d
v o lta g e
D u ty cycle : 5 0 %
T = 12 5C
T = 9 0 C
G a te drive a s sp ec ifie d
T urn -o n losse s inclu de
e ffec ts of re ve rse re co ve ry
s in k
J
P ow er D iss ipa tion = 13 .5W
0 .1
1
1 0
1 0 0
0 .1
1
1 0
C E
C
I
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
V , C o llector-to-E m itter V oltage (V )
T = 1 50 C
T = 2 5 C
J
J
V = 1 5 V
2 0 s P U LS E W ID TH
G E
1
1 0
1 0 0
5
1 0
1 5
2 0
C
I
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
V , G a te -to -E m itte r V o lta g e (V )
G E
T = 2 5C
T = 1 50 C
J
J
V = 1 00 V
5 s P U L S E W ID T H
C C
To Order
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C-900
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
IRGBC20KD2
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
0
2
4
6
8
1 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
M
a
x
i
m
u
m
D
C
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
T , C ase T em perature (C )
C
V = 1 5V
G E
1 .0
2 .0
3 .0
4 .0
5 .0
-6 0
-4 0
-2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
T , C ase Tem perature (C )
C
C
E
V
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V = 15 V
80 s P U L S E W ID T H
G E
I = 1 2A
I = 6.0A
I = 3.0 A
C
C
C
0 .0 1
0 .1
1
1 0
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
1 0
t , R ectangular P ulse D uration (sec)
1
t
h
J
C
D = 0.50
0 .01
0.0 2
0.0 5
0 .10
0 .2 0
SIN G LE P U LS E
(T H ER M AL R E SP O N SE )
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
P
t 2
1
t
D M
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
To Order
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C-901
IRGBC20KD2
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
1
1 0
1 00
C E
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V , C o llector-to-E m itter V oltage (V )
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
0
4
8
1 2
1 6
2 0
0
4
8
1 2
1 6
2 0
G
E
V
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
Q , Total G ate C harge (nC )
g
V = 4 80 V
I = 6.0 A
C E
C
0.4 5 0
0.4 5 5
0.4 6 0
0.4 6 5
0.4 7 0
0.4 7 5
0.4 8 0
2 0
2 5
3 0
3 5
4 0
4 5
50
5 5
G
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
R , G ate R esistance ( )
W
V = 48 0V
V = 1 5V
T = 25 C
I = 6.0A
C C
G E
C
C
0 .1
1
1 0
-6 0
-4 0
-2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
C
T , C a s e T e m p era tu re (C )
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
R = 50
V = 15 V
V = 4 80 V
G
GE
CC
I = 1 2A
I = 6.0 A
I = 3.0 A
C
C
C
To Order
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