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C-335
IRGBC20M-S
Short Circuit Rated
Fast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
Short circuit rated - 10s @ 125C, V
GE
= 15V
Switching-loss rating includes all "tail" losses
Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
V
CES
= 600V
V
CE(sat)
2.3V
@V
GE
= 15V, I
C
= 8.0A
E
C
G
n-channel
PD - 9.1131A
Description
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
--
--
2.1
R
JA
Junction-to-Ambient, (PCB mount)**
--
--
40
C/W
R
JA
Junction-to-Ambient, typical socket mount
--
--
80
Wt
Weight
--
2 (0.07)
--
g (oz)
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
13
I
C
@ T
C
= 100C
Continuous Collector Current
8.0
A
I
CM
Pulsed Collector Current
26
I
LM
Clamped Inductive Load Current
26
t
sc
Short Circuit Withstand Time
10
s
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
5.0
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
60
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
24
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Absolute Maximum Ratings
**
When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
Thermal Resistance
SMD-220
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Revision 1
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C-336
IRGBC20M-S
Notes:
V
CC
=80%(V
CES
), V
GE
=20V, L=10H,
R
G
= 50
, ( See fig. 13a )
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width
80s; duty factor
0.1%.
Pulse width 5.0s,
single shot.
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
7.9
16
I
C
= 8.0A
Q
ge
Gate - Emitter Charge (turn-on)
--
3.6
5.2
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
--
6.0
9.0
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
29
--
T
J
= 25C
t
r
Rise Time
--
22
--
ns
I
C
= 8.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
270
400
V
GE
= 15V, R
G
= 50
t
f
Fall Time
--
280
510
Energy losses include "tail"
E
on
Turn-On Switching Loss
--
0.14
--
E
off
Turn-Off Switching Loss
--
0.86
--
mJ
See Fig. 9, 10, 11, 14
E
ts
Total Switching Loss
--
1.0
2.0
t
sc
Short Circuit Withstand Time
10
--
--
s
V
CC
= 360V, T
J
= 125C
V
GE
= 15V, R
G
= 50
, V
CPK
< 500V
t
d(on)
Turn-On Delay Time
--
27
--
T
J
= 150C,
t
r
Rise Time
--
21
--
ns
I
C
= 8.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
370
--
V
GE
= 15V, R
G
= 50
t
f
Fall Time
--
420
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
1.4
--
mJ
See Fig. 10, 14
L
E
Internal Emitter Inductance
--
7.5
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
365
--
V
GE
= 0V
C
oes
Output Capacitance
--
47
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
4.8
--
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
20
--
--
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.42
--
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.0
2.3
I
C
= 8.0A
V
GE
= 15V
--
2.7
--
V
I
C
= 13A
See Fig. 2, 5
--
2.5
--
I
C
= 8.0A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
5.5
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-11
-- mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
2.7
3.8
--
S
V
CE
= 100V, I
C
= 8.0A
I
CES
Zero Gate Voltage Collector Current
--
--
250
A
V
GE
= 0V, V
CE
= 600V
--
--
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
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C-337
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRGBC20M-S
0
4
8
1 2
1 6
2 0
0 .1
1
1 0
1 0 0
f, F re quency (kH z)
L
o
a
d
C
u
r
r
e
n
t
(
A
)
A
6 0% of rated
voltage
Ide al d iod es
S qu a re w a ve :
Trian gu lar wa ve :
C la mp voltag e:
8 0% o f rate d
F o r b o th :
D u ty c ycle : 5 0 %
T = 1 2 5 C
T = 9 0 C
G a te d rive a s sp ec ified
s in k
J
Pow er D issipation = 1 4W
1
10
100
1
10
CE
C
I
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
V , Collector-to-Emitter Voltage (V)
T = 150C
T = 25C
J
J
V = 15V
20s PULSE WIDTH
GE
A
1
10
100
5
10
15
20
C
I
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
GE
T = 25C
T = 150C
J
J
V = 100V
5s PULSE WIDTH
CC
V , Gate-to-Emitter Voltage (V)
A
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C-338
Fig. 5
- Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4
- Maximum Collector Current vs.
Case Temperature
IRGBC20M-S
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
2
4
6
8
10
12
14
25
50
75
100
125
150
M
a
x
i
m
u
m
D
C
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
T , Case Temperature (C)
C
V = 15V
GE
A
0.0
1.0
2.0
3.0
4.0
5.0
-60 -40 -20
0
20
40
60
80
100 120 140 160
C
C
E
V
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V = 15V
80s PULSE WIDTH
GE
T , Case Temperature (C)
I = 16A
I = 8.0A
I = 4.0A
C
C
C
A
0 .0 1
0 .1
1
1 0
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
1 0
t , R ectangular P ulse D uration (sec)
1
t
h
J
C
D = 0.50
0 .01
0.0 2
0.0 5
0 .10
0 .2 0
SIN G LE P U LS E
(T H ER M AL R E SP O N SE )
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
P
t 2
1
t
D M
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
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C-339
IRGBC20M-S
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
0 .8 8 0
0 .8 8 4
0 .8 8 8
0 .8 9 2
0 .8 9 6
0 .9 0 0
1 0
2 0
3 0
4 0
5 0
6 0
G
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
R , G ate R esistance ( )
W
V = 48 0 V
V = 15 V
T = 25 C
I = 8.0A
C C
G E
C
C
0 .1
1
1 0
-6 0
-4 0
-2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
C
T , C ase Tem perature (C )
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
R = 5 0
V = 15 V
V = 4 80 V
G
G E
C C
I = 16 A
I = 8.0A
I = 4.0A
C
C
C
A
0
200
400
600
1
10
100
CE
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V , Collector-to-Emitter Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
0
4
8
12
16
20
0
4
8
12
16
20
G
E
V
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
g
Q , Total Gate Charge (nC)
V = 400V
I = 8.0A
CE
C
A
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