C-843
IRGBC30K
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
--
--
1.2
R
CS
Case-to-Sink, flat, greased surface
--
0.50
--
C/W
R
JA
Junction-to-Ambient, typical socket mount
--
--
80
Wt
Weight
--
2 (0.07)
--
g (oz)
Features
Short circuit rated - 10s @ 125C, V
GE
= 15V
Switching-loss rating includes all "tail" losses
Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
V
CES
= 600V
V
CE(sat)
3.8V
@V
GE
= 15V, I
C
= 14A
E
C
G
n-channel
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
23
I
C
@ T
C
= 100C
Continuous Collector Current
14
A
I
CM
Pulsed Collector Current
46
I
LM
Clamped Inductive Load Current
46
t
sc
Short Circuit Withstand Time
10
s
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
10
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
100
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
42
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
PD - 9.1071
Thermal Resistance
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Description
TO-220AB
Revision 1
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C-844
IRGBC30K
Notes:
V
CC
=80%(V
CES
), V
GE
=20V, L=10H,
R
G
= 23
, ( See fig. 13a )
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width
80s; duty factor
0.1%.
Pulse width 5.0s,
single shot.
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
39
58
I
C
= 14A
Q
ge
Gate - Emitter Charge (turn-on)
--
8.7
13
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
--
15
23
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
31
--
T
J
= 25C
t
r
Rise Time
--
23
--
ns
I
C
= 14A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
100
150
V
GE
= 15V, R
G
= 23
t
f
Fall Time
--
84
130
Energy losses include "tail"
E
on
Turn-On Switching Loss
--
0.3
--
E
off
Turn-Off Switching Loss
--
0.3
--
mJ
See Fig. 9, 10, 11, 14
E
ts
Total Switching Loss
--
0.6
0.9
t
sc
Short Circuit Withstand Time
10
--
--
s
V
CC
= 360V, T
J
= 125C
V
GE
= 15V, R
G
= 23
, V
CPK
< 500V
t
d(on)
Turn-On Delay Time
--
30
--
T
J
= 150C,
t
r
Rise Time
--
23
--
ns
I
C
= 14A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
170
--
V
GE
= 15V, R
G
= 23
t
f
Fall Time
--
170
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
1.2
--
mJ
See Fig. 10, 14
L
E
Internal Emitter Inductance
--
7.5
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
740
--
V
GE
= 0V
C
oes
Output Capacitance
--
92
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
9.4
--
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
20
--
--
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.30
--
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.5
3.8
I
C
= 14A
V
GE
= 15V
--
3.3
--
V
I
C
= 23A
See Fig. 2, 5
--
2.5
--
I
C
= 14A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
5.5
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-13
-- mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
3.3
6.5
--
S
V
CE
= 100V, I
C
= 14A
I
CES
Zero Gate Voltage Collector Current
--
--
600
A
V
GE
= 0V, V
CE
= 600V
--
--
1100
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
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C-845
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRGBC30K
0
10
20
30
0.1
1
10
100
f, Frequency (kHz)
A
60% of rated
voltage
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
T = 125C
T = 90C
Gate drive as specified
sink
J
Triangular wave:
Clamp voltage:
80% of rated
Power Dissipation = 21W
0.1
1
10
100
0.1
1
10
CE
C
I
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
V , Collector-to-Emitter Voltage (V)
T = 150C
T = 25C
J
J
V = 15V
20s PULSE WIDTH
GE
A
1
10
100
5
10
15
20
C
I
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
GE
T = 25C
T = 150C
J
J
V = 100V
5s PULSE WIDTH
CC
V , Gate-to-Emitter Voltage (V)
A
Load Current (A)
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C-846
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
IRGBC30K
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-60 -40 -20
0
20
40
60
80
100 120 140 160
C
C
E
V
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V = 15V
80s PULSE WIDTH
GE
T , Case Temperature (C)
A
I = 28A
I = 14A
I = 7.0A
C
C
C
0
5
10
15
20
25
25
50
75
100
125
150
M
a
x
i
m
u
m
D
C
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
T , Case Temperature (C)
C
V = 15V
GE
A
0 .0 1
0 .1
1
1 0
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
1 0
t , R ectangular P ulse D uration (sec)
1
t
h
J
C
D = 0.5 0
0 .0 1
0 .0 2
0 .05
0.10
0.20
S IN G L E PU LS E
(T H E R M AL RE S PO N SE )
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
P
t
2
1
t
D M
N o te s :
1 . D u ty f ac t or D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
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C-847
IRGBC30K
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
0.60
0.64
0.68
0.72
0.76
0.80
0
10
20
30
40
50
60
G
R , Gate Resistance (
)
A
V = 480V
V = 15V
T = 25C
I = 14A
CC
GE
C
C
0.1
1
10
-60
-40 -20
0
20
40
60
80
100 120 140 160
C
T , Case Temperature (C)
A
R = 23
V = 15V
V = 480V
I = 28A
I = 14A
I = 7.0A
G
GE
CC
C
C
C
0
200
400
600
800
1000
1200
1400
1
10
100
CE
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V , Collector-to-Emitter Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
0
4
8
12
16
20
0
10
20
30
40
G
E
V
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
g
Q , Total Gate Charge (nC)
A
V = 400V
I = 14A
CE
C
Total Switching Losses (mJ)
Total Switching Losses (mJ)
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