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C-243
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
--
--
1.2
R
CS
Case-to-Sink, flat, greased surface
--
0.50
--
C/W
R
JA
Junction-to-Ambient, typical socket mount
--
--
80
Wt
Weight
--
2.0 (0.07)
--
g (oz)
IRGBF30F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
Switching-loss rating includes all "tail" losses
Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
V
CES
= 900V
V
CE(sat)
3.7V
@V
GE
= 15V, I
C
= 11A
E
C
G
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
900
V
I
C
@ T
C
= 25C
Continuous Collector Current
20
I
C
@ T
C
= 100C
Continuous Collector Current
11
A
I
CM
Pulsed Collector Current
40
I
LM
Clamped Inductive Load Current
40
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
10
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
100
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
42
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Thermal Resistance
PD - 9.773
TO-220AB
Revision 0
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C-244
IRGBF30F
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
22
33
I
C
= 11A
Q
ge
Gate - Emitter Charge (turn-on)
--
5.1
7.7
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
--
8.0
12
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
27
--
T
J
= 25C
t
r
Rise Time
--
9.7
--
ns
I
C
= 11A, V
CC
= 720V
t
d(off)
Turn-Off Delay Time
--
160
280
V
GE
= 15V, R
G
= 23
t
f
Fall Time
--
140
240
Energy losses include "tail"
E
on
Turn-On Switching Loss
--
0.33
--
E
off
Turn-Off Switching Loss
--
0.67
--
mJ
See Fig. 9, 10, 11, 14
E
ts
Total Switching Loss
--
1.0
1.9
t
d(on)
Turn-On Delay Time
--
27
--
T
J
= 150C,
t
r
Rise Time
--
12
--
ns
I
C
= 11A, V
CC
= 720V
t
d(off)
Turn-Off Delay Time
--
260
--
V
GE
= 15V, R
G
= 23
t
f
Fall Time
--
250
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
2.0
--
mJ
See Fig. 10, 14
L
E
Internal Emitter Inductance
--
7.5
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
560
--
V
GE
= 0V
C
oes
Output Capacitance
--
50
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
7.3
--
= 1.0MHz
Notes:
V
CC
=80%(V
CES
), V
GE
=20V, L=10H,
R
G
= 23
, ( See fig. 13a )
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width
80s; duty factor
0.1%.
Pulse width 5.0s,
single shot.
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
900
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
20
--
--
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.83
--
V/C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.6
3.7
I
C
= 11A
V
GE
= 15V
--
3.3
--
V
I
C
= 20A
See Fig. 2, 5
--
2.9
--
I
C
= 11A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
5.5
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-11
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
3.6
6.9
--
S
V
CE
= 100V, I
C
= 11A
I
CES
Zero Gate Voltage Collector Current
--
--
250
A
V
GE
= 0V, V
CE
= 900V
--
--
1000
V
GE
= 0V, V
CE
= 900V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
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C-245
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRGBF30F
0
5
1 0
1 5
2 0
2 5
0 .1
1
1 0
1 0 0
L
O
A
D
C
U
R
R
E
N
T
(
A
)
f, F re q u e n c y (k H z )
6 0 % o f ra te d
v o lta g e
Id ea l d io d e s
S q u a re w a v e :
T ria n g u la r w a v e :
C la m p v o lta g e :
8 0 % o f ra te d
F o r b o th :
D u ty c y cle : 5 0 %
T = 1 2 5 C
T = 9 0 C
G a te d riv e as sp e c ifie d
sin k
J
P o w e r D i s s ip a ti o n = 2 1 W
1
1 0
1 0 0
1
1 0
C E
C
I
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
V , C o llector-to-E m itter V oltage (V )
T = 15 0 C
T = 25 C
J
J
V = 15 V
20 s P U L S E W ID T H
G E
1
1 0
1 0 0
5
1 0
1 5
2 0
C
I
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
V , G a te -to -E m itte r V o lta g e (V )
G E
T = 2 5C
T = 1 50 C
J
J
V = 1 00 V
5 s P U L S E W ID T H
C C
To Order
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C-246
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
IRGBF30F
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
4
8
1 2
1 6
2 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
M
a
x
i
m
u
m
D
C
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
T , C ase T em perature (C )
C
V = 15 V
G E
2 .0
3 .0
4 .0
5 .0
-6 0
-4 0
-2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
T , C a s e T e m p e ra ture (C )
C
C
E
V
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V = 1 5V
8 0 s P U LS E W ID T H
G E
I = 2 2 A
I = 1 1A
I = 5.5 A
C
C
C
0 .0 1
0 .1
1
1 0
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
1 0
t , R ectangular P ulse D uration (sec)
1
t
h
J
C
D = 0.5 0
0 .0 1
0 .0 2
0 .05
0.10
0.20
S IN G L E PU LS E
(T H E R M AL RE S PO N SE )
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
P
t
2
1
t
D M
N o te s :
1 . D u ty f ac t or D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
To Order
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C-247
IRGBF30F
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
0
2 0 0
4 0 0
6 0 0
8 0 0
10 0 0
1
1 0
1 0 0
C E
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V , C o llector-to-E m itter V oltage (V )
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
0
4
8
1 2
1 6
2 0
0
5
1 0
15
2 0
2 5
G
E
V
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
Q , T o tal G a te C h a rg e (n C )
g
V = 40 0V
I = 11 A
C E
C
0 .9 8
1 .0 0
1 .0 2
1 .0 4
1 .0 6
1 .0 8
1 .1 0
20
2 5
30
3 5
40
4 5
5 0
5 5
G
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
R , G a te R e s is ta n c e ( )
W
V = 72 0V
V = 1 5V
T = 25C
I = 11 A
C C
G E
C
C
0 .1
1
1 0
-6 0
-4 0
-2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
C
T , C a s e T e m p era tu re (C )
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
R = 22
V = 1 5V
V = 7 20 V
G
GE
CC
I = 22 A
I = 11 A
I = 5.5 A
C
C
C
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