IRGMC40F.p65
IRGMC40F
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
Features
V
CES
= 600V
V
CE(on) max
= 2.0V
@V
GE
= 15V, I
C
= 20A
Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
35*
I
C
@ T
C
= 100C
Continuous Collector Current
20
A
I
CM
Pulsed Collector Current
152
I
LM
Clamped Inductive Load Current
152
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
125
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
50
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
C
Lead Temperature
300 (0.063in./1.6mm from case for 10s)
Weight
9.3 (typical)
g
Absolute Maximum Ratings
02/20/02
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1
Fast Speed IGBT
Electrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
Switching-loss rating includes all "tail" losses
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
TO-254AA
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
1.0
RthCS
Case-to-Sink
--
0.21
--
RthJA
Junction-to-Ambient
--
--
48
C/W
PD -90716B
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (f
Ic/2
, or the "half-current frequency "),
as well as an indication of the current handling capability of the device.
Description
*
Current is limited by pin diameter
For footnotes refer to the last page
2
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IRGMC40F
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
58
116
I
C
= 20A
Q
ge
Gate - Emitter Charge (turn-on)
8.0
16
nC
V
CC
= 300V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
30
60
V
GE
= 15V
t
d(on)
Turn-On Delay Time
52
I
C
= 20A, V
CC
= 480V
t
r
Rise Time
74
V
GE
= 15V, R
G
= 9.1
t
d(off)
Turn-Off Delay Time
410
Energy losses include "tail"
t
f
Fall Time
420
See Fig. 9, 10 & 13
E
on
Turn-On Switching Loss
0.6
E
off
Turn-off Switching Loss
3.8
E
ts
Total Switching Loss
4.4
9.0
t
d(on)
Turn-On Delay Time
28
T
J
= 125C
t
r
Rise Time
37
I
C
= 20A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
380
V
GE
= 15V, R
G
= 9.1
t
f
Fall Time
460
Energy losses include "tail"
E
ts
Total Switching Loss
7.0
See Fig. 11, 13
L
C
+L
E
Total Inductance
6.8
nH
Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
C
ies
Input Capacitance
1500
V
GE
= 0V
C
oes
Output Capacitance
190
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
20
= 1.0MHz
C
res
Reverse Transfer Capacitance
12
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
V
GE
= 0V, I
C
= 1.0 mA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
24
V
V
GE
= 0V, I
C
= 1.0 A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
0.7
V/C
V
GE
= 0V, I
C
= 1.0 mA
2.0
I
C
= 20A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
2.2
I
C
= 35A See Fig.5
1.9
I
C
= 20A , T
J
= 125C
V
GE(th)
Gate Threshold Voltage
3.0
5.5
V
CE
= V
GE
, I
C
= 250 A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
-12
mV/C V
CE
= V
GE
, I
C
= 250 A
g
fe
Forward Transconductance
T
9.2
S
V
CE
15V, I
C
= 20A
50
V
GE
= 0V, V
CE
= 480V
1000
V
GE
= 0V, V
CE
= 480V, T
J
= 125C
I
GES
Gate-to-Emitter Leakage Current
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
A
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
V
ns
mJ
ns
mJ
For footnotes refer to the last page
Note: Corresponding Spice and Saber models are available on the Website.
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3
IRGMC40F
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
4
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IRGMC40F
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
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5
IRGMC40F
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
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